Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy

Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy is studied. By an optimization of the growth conditions and a study of the facet development, well-defined GaAs microstructures with facets mostly belonging to the crystal plane families {01n},...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2013-09, Vol.378, p.480-484
Main Authors: ZANDER, M, NISHINAGA, J, HORIKOSHI, Y
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Diffusion in solids
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Gallium arsenide
Gallium arsenides
General studies of phase transitions
Indium arsenides
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microstructure
Molecular, atomic, ion, and chemical beam epitaxy
Nanocomposites
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nucleation
Physics
Quantum dots
Transport properties of condensed matter (nonelectronic)
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy is studied. By an optimization of the growth conditions and a study of the facet development, well-defined GaAs microstructures with facets mostly belonging to the crystal plane families {01n}, {11n} and (001) are fabricated. Subsequently deposited InAs shows a preferred nucleation on (001) top facets as well as on {012}/{013} and {011} facet boundaries. By the understanding of the InAs nucleation mechanism, precisely positioned In(Ga)As/GaAs nanostructures such as quantum dots and quantum dot chains are achieved. To investigate the interface properties, transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements are performed. The measurements reveal a relatively high incorporation of Ga into the InAs nanostructures even for InAs deposited at a low growth temperature of 470 C.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2012.12.089