N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN e...

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Bibliographic Details
Published in:IEEE electron device letters 2009-02, Vol.30 (2), p.113-116
Main Authors: Chung, J.W., Piner, E.L., Palacios, T.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Applied sciences
Carrier confinement
Carriers
Compound structure devices
Devices
Electronics
Electrons
Exact sciences and technology
Gallium nitride
Gallium nitrides
GaN
HEMTs
high electron mobility transistor (HEMT)
High electron mobility transistors
hydrogen silsesquioxane (HSQ) adhesive bonding
Laboratories
layer transfer
MODFETs
N-face GaN
Ohmic contacts
Rough surfaces
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon substrate
Silicon substrates
Substrates
Transistors
Transport properties
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Summary:We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN epilayer grown on Si (111) is exposed by removing the Si substrate. To provide mechanical support, prior to the substrate removal, the Ga-face of the wafer is bonded to a Si (100) carrier wafer. The resultant N-face GaN/AlGaN heterostructures exhibited record transport properties (mu e = 1670 cm 2 /Vmiddots, n s = 1.6 times 10 13 / cm 2 , and R sh = 240 Omega/sq). These excellent transport properties rendered N-face HEMTs with 30% higher maximum drain current than Ga-face HEMTs and good RF characteristics (f T = 10.7 GHz middotmum and f max = 21.5 GHzmiddotmum), comparable to state-of-the-art Ga-face devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2010415