High Photo-Responsivity Deep-UV Detector Based on Binary SnO2-Ga2O3 Compound Nanowires Array

Deep-UV photodetectors (DUV PDs) have displayed huge potentials in both military and civilian applications due to the low background noise interference. In this work, the binary SnO2-Ga2O3 compound nanowires array with excellent photo-response properties had been successfully fabricated by using low...

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Bibliographic Details
Published in:IEEE photonics technology letters 2024-01, Vol.36 (1), p.47-50
Main Authors: Li, Lei, Liu, Zeng, Yao, Su-Hao, Hu, Ji, Zhang, Mao-Lin, Yang, Li-Li, Li, Shan, Guo, Yu-Feng, Tang, Wei-Hua
Format: Article
Language:English
Subjects:
Arrays
Background noise
Chemical vapor deposition
Compounds
CVD
Deep-UV photodetector
Gallium oxides
Lighting
Low pressure
Luminous intensity
Military applications
nanowire array
Nanowires
Photodetectors
Photoelectric effect
Photometers
Photonic band gap
Powders
SnO₂-Ga₂O
Substrates
Tin dioxide
Ultraviolet detectors
wide band gap oxide
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Summary:Deep-UV photodetectors (DUV PDs) have displayed huge potentials in both military and civilian applications due to the low background noise interference. In this work, the binary SnO2-Ga2O3 compound nanowires array with excellent photo-response properties had been successfully fabricated by using low-pressure chemical vapor deposition (LP-CVD) with the Ga2O3, SnO2, and carbon powders as reaction sources. The diameter of compound nanowires is approximately 135 nm for binary oxide SnO2-Ga2O3. The SnO2-Ga2O3 nanowires deep-UV photodetector achieved large photo-responsivity ( R ) of 2.2 A/W under illumination with a light intensity of 162~\mu \text{W} /cm2 at 5 V, with the high photocurrent of dozens of microamperes. The high photo-response of compound nanowires array may well be owing to the high-quality of crystal and the large exposed area when illuminated; which is the main advantage of nanowire structure. In a word, this work could provide a feasible pathway in boosting the development of nanowire-based DUV PDs based on wide band gap semiconductors, along with promised photo-response characteristics.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2023.3335109