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Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layer
Abstract We report on the results of experimental studies of the photocurrent (PC) of photodiodes based on GaAs p-i-n structures with InAs/GaAs(001) double asymmetric quantum dot (DAQD) arrays obtained by self-assembling in the process of low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). Th...
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| Published in: | Journal of physics. Conference series 2021-03, Vol.1851 (1), p.12016 |
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| Main Authors: | , , , , , , , , , , , , |
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| container_title | Journal of physics. Conference series |
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| creator | Krevchik, V D Semenov, M B Shorokhov, A V Filatov, D O Baidus, N V Marychev, M O Shkurinov, A P Timoshenko, V Yu Krevchik, P V Zhurina, A E Saburova, D A Antonov, I S Semenov, I M |
| description | Abstract
We report on the results of experimental studies of the photocurrent (PC) of photodiodes based on GaAs
p-i-n
structures with InAs/GaAs(001) double asymmetric quantum dot (DAQD) arrays obtained by self-assembling in the process of low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). Three peaks were observed in the dependence of the PC on the reverse bias, measured under photoexcitation with a photon energy equal to the energy of the interband ground state transition in larger InAs QDs. These peaks were attributed to photoexcitation of electrons from the ground hole states in larger QDs into the ground electron states followed by resonant dissipative (with absorption or emission of optical phonons) and conservative tunneling into the GaAs conduction band via the ground electron states in smaller QDs. The PC dependence on the bias voltage agrees qualitatively with the theoretical field dependence of the probability of 1D dissipative tunneling between the QDs. |
| doi_str_mv | 10.1088/1742-6596/1851/1/012016 |
| format | article |
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We report on the results of experimental studies of the photocurrent (PC) of photodiodes based on GaAs
p-i-n
structures with InAs/GaAs(001) double asymmetric quantum dot (DAQD) arrays obtained by self-assembling in the process of low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). Three peaks were observed in the dependence of the PC on the reverse bias, measured under photoexcitation with a photon energy equal to the energy of the interband ground state transition in larger InAs QDs. These peaks were attributed to photoexcitation of electrons from the ground hole states in larger QDs into the ground electron states followed by resonant dissipative (with absorption or emission of optical phonons) and conservative tunneling into the GaAs conduction band via the ground electron states in smaller QDs. The PC dependence on the bias voltage agrees qualitatively with the theoretical field dependence of the probability of 1D dissipative tunneling between the QDs.</description><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/1851/1/012016</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Bias ; Conduction bands ; Dependence ; Electron states ; Electron tunneling ; Indium arsenides ; Low pressure ; P-i-n photodiodes ; Photoelectric effect ; Photoelectric emission ; Photoexcitation ; Physics ; Quantum dots ; Self-assembly ; Vapor phase epitaxy ; Vapor phases</subject><ispartof>Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12016</ispartof><rights>2021. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2496-cfa54dff0e115e42c86fc2c8e8145802e6612c7932068fc1bef57221f018357d3</citedby><cites>FETCH-LOGICAL-c2496-cfa54dff0e115e42c86fc2c8e8145802e6612c7932068fc1bef57221f018357d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/2515162810?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>315,786,790,25783,27957,27958,37047,44625</link.rule.ids></links><search><creatorcontrib>Krevchik, V D</creatorcontrib><creatorcontrib>Semenov, M B</creatorcontrib><creatorcontrib>Shorokhov, A V</creatorcontrib><creatorcontrib>Filatov, D O</creatorcontrib><creatorcontrib>Baidus, N V</creatorcontrib><creatorcontrib>Marychev, M O</creatorcontrib><creatorcontrib>Shkurinov, A P</creatorcontrib><creatorcontrib>Timoshenko, V Yu</creatorcontrib><creatorcontrib>Krevchik, P V</creatorcontrib><creatorcontrib>Zhurina, A E</creatorcontrib><creatorcontrib>Saburova, D A</creatorcontrib><creatorcontrib>Antonov, I S</creatorcontrib><creatorcontrib>Semenov, I M</creatorcontrib><title>Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layer</title><title>Journal of physics. Conference series</title><description>Abstract
We report on the results of experimental studies of the photocurrent (PC) of photodiodes based on GaAs
p-i-n
structures with InAs/GaAs(001) double asymmetric quantum dot (DAQD) arrays obtained by self-assembling in the process of low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). Three peaks were observed in the dependence of the PC on the reverse bias, measured under photoexcitation with a photon energy equal to the energy of the interband ground state transition in larger InAs QDs. These peaks were attributed to photoexcitation of electrons from the ground hole states in larger QDs into the ground electron states followed by resonant dissipative (with absorption or emission of optical phonons) and conservative tunneling into the GaAs conduction band via the ground electron states in smaller QDs. The PC dependence on the bias voltage agrees qualitatively with the theoretical field dependence of the probability of 1D dissipative tunneling between the QDs.</description><subject>Bias</subject><subject>Conduction bands</subject><subject>Dependence</subject><subject>Electron states</subject><subject>Electron tunneling</subject><subject>Indium arsenides</subject><subject>Low pressure</subject><subject>P-i-n photodiodes</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photoexcitation</subject><subject>Physics</subject><subject>Quantum dots</subject><subject>Self-assembly</subject><subject>Vapor phase epitaxy</subject><subject>Vapor phases</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNo9kM1OxCAUhRujiePPM0jiug6XFsosJ5PxJzFxo2uC9OJgOlCBanwDH1uaMbKAm3NOzg1fVV0BvQEq5RK6ltWCr8QSJIclLCkwCuKoWvw7x_-zlKfVWUrvlDbldIvqZ2stmpxIsKR3KblRZ_eJBIeixuBJnrzHwfk3stfeWUwZe-KKvkMy7kIOZooRfZ4LNLnT60TG2tX-YPYu9Ei-XN4Vsw_T64DkwZfMx6R9nvZFy2TQ3xgvqhOrh4SXf-959XK7fd7c149Pdw-b9WNtWLsStbGat721FAE4tsxIYU25UULLJWUoBDDTrRpGhbQGXtHyjjGwFGTDu745r64PvWMMH1P5jnoPU_RlpWIcOAgmgZZUd0iZGFKKaNUY3V7HbwVUzdjVDFTNcNWMXYE6YG9-AWf6dqY</recordid><startdate>20210301</startdate><enddate>20210301</enddate><creator>Krevchik, V D</creator><creator>Semenov, M B</creator><creator>Shorokhov, A V</creator><creator>Filatov, D O</creator><creator>Baidus, N V</creator><creator>Marychev, M O</creator><creator>Shkurinov, A P</creator><creator>Timoshenko, V Yu</creator><creator>Krevchik, P V</creator><creator>Zhurina, A E</creator><creator>Saburova, D A</creator><creator>Antonov, I S</creator><creator>Semenov, I M</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20210301</creationdate><title>Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layer</title><author>Krevchik, V D ; Semenov, M B ; Shorokhov, A V ; Filatov, D O ; Baidus, N V ; Marychev, M O ; Shkurinov, A P ; Timoshenko, V Yu ; Krevchik, P V ; Zhurina, A E ; Saburova, D A ; Antonov, I S ; Semenov, I M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2496-cfa54dff0e115e42c86fc2c8e8145802e6612c7932068fc1bef57221f018357d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Bias</topic><topic>Conduction bands</topic><topic>Dependence</topic><topic>Electron states</topic><topic>Electron tunneling</topic><topic>Indium arsenides</topic><topic>Low pressure</topic><topic>P-i-n photodiodes</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Photoexcitation</topic><topic>Physics</topic><topic>Quantum dots</topic><topic>Self-assembly</topic><topic>Vapor phase epitaxy</topic><topic>Vapor phases</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Krevchik, V D</creatorcontrib><creatorcontrib>Semenov, M B</creatorcontrib><creatorcontrib>Shorokhov, A V</creatorcontrib><creatorcontrib>Filatov, D O</creatorcontrib><creatorcontrib>Baidus, N V</creatorcontrib><creatorcontrib>Marychev, M O</creatorcontrib><creatorcontrib>Shkurinov, A P</creatorcontrib><creatorcontrib>Timoshenko, V Yu</creatorcontrib><creatorcontrib>Krevchik, P V</creatorcontrib><creatorcontrib>Zhurina, A E</creatorcontrib><creatorcontrib>Saburova, D A</creatorcontrib><creatorcontrib>Antonov, I S</creatorcontrib><creatorcontrib>Semenov, I M</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Database (1962 - current)</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection (Proquest) (PQ_SDU_P3)</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest - Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Journal of physics. Conference series</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Krevchik, V D</au><au>Semenov, M B</au><au>Shorokhov, A V</au><au>Filatov, D O</au><au>Baidus, N V</au><au>Marychev, M O</au><au>Shkurinov, A P</au><au>Timoshenko, V Yu</au><au>Krevchik, P V</au><au>Zhurina, A E</au><au>Saburova, D A</au><au>Antonov, I S</au><au>Semenov, I M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layer</atitle><jtitle>Journal of physics. Conference series</jtitle><date>2021-03-01</date><risdate>2021</risdate><volume>1851</volume><issue>1</issue><spage>12016</spage><pages>12016-</pages><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>Abstract
We report on the results of experimental studies of the photocurrent (PC) of photodiodes based on GaAs
p-i-n
structures with InAs/GaAs(001) double asymmetric quantum dot (DAQD) arrays obtained by self-assembling in the process of low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). Three peaks were observed in the dependence of the PC on the reverse bias, measured under photoexcitation with a photon energy equal to the energy of the interband ground state transition in larger InAs QDs. These peaks were attributed to photoexcitation of electrons from the ground hole states in larger QDs into the ground electron states followed by resonant dissipative (with absorption or emission of optical phonons) and conservative tunneling into the GaAs conduction band via the ground electron states in smaller QDs. The PC dependence on the bias voltage agrees qualitatively with the theoretical field dependence of the probability of 1D dissipative tunneling between the QDs.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/1851/1/012016</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12016 |
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| subjects | Bias Conduction bands Dependence Electron states Electron tunneling Indium arsenides Low pressure P-i-n photodiodes Photoelectric effect Photoelectric emission Photoexcitation Physics Quantum dots Self-assembly Vapor phase epitaxy Vapor phases |
| title | Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layer |
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