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Modulation of thermal stability and spin–orbit torque in IrMn/CoFeB/MgO structures through atom thick W insertion
Antiferromagnet (AFM)/ferromagnet (FM) systems such as IrMn/CoFeB/MgO enable spin–orbit-torque- (SOT-) induced switching of perpendicular magnetization in the absence of an external magnetic field. However, the low thermal stability, weak perpendicular magnetic anisotropy (PMA), and indistinctive SO...
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Published in: | Applied physics letters 2020-11, Vol.117 (21) |
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container_title | Applied physics letters |
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creator | Xiong, Danrong Peng, Shouzhong Lu, Jiaqi Li, Weixiang Wu, Hao Li, Zhi Cheng, Houyi Wang, Yuyan Back, Christian H. Wang, Kang L. Zhao, Weisheng |
description | Antiferromagnet (AFM)/ferromagnet (FM) systems such as IrMn/CoFeB/MgO enable spin–orbit-torque- (SOT-) induced switching of perpendicular magnetization in the absence of an external magnetic field. However, the low thermal stability, weak perpendicular magnetic anisotropy (PMA), and indistinctive SOT of these AFM/FM heterostructures pose challenges to the practical application. Here, through the insertion of a thin W layer between the IrMn and CoFeB layers, we show that much larger effective PMA fields are obtained with annealing stability to 300 °C, which is guaranteed by the prevention of Mn diffusion via W insertion as shown in spherical aberration corrected transmission electron microscopy and atomic-resolution electron energy-loss spectroscopy measurement results. Furthermore, the spin–orbit torque is effectively tuned by changing the W layer thickness via modulation of the interfacial spin–orbit coupling at IrMn/W/CoFeB interfaces, which was reported to degrade the interface spin transparency for the spin currents. Finally, field-free magnetization switching was achieved with comparable exchange bias fields to samples without W insertion. This work demonstrates an effective strategy for improving the performance of the thermally robust AFM-based SOT device. |
doi_str_mv | 10.1063/5.0029522 |
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However, the low thermal stability, weak perpendicular magnetic anisotropy (PMA), and indistinctive SOT of these AFM/FM heterostructures pose challenges to the practical application. Here, through the insertion of a thin W layer between the IrMn and CoFeB layers, we show that much larger effective PMA fields are obtained with annealing stability to 300 °C, which is guaranteed by the prevention of Mn diffusion via W insertion as shown in spherical aberration corrected transmission electron microscopy and atomic-resolution electron energy-loss spectroscopy measurement results. Furthermore, the spin–orbit torque is effectively tuned by changing the W layer thickness via modulation of the interfacial spin–orbit coupling at IrMn/W/CoFeB interfaces, which was reported to degrade the interface spin transparency for the spin currents. Finally, field-free magnetization switching was achieved with comparable exchange bias fields to samples without W insertion. This work demonstrates an effective strategy for improving the performance of the thermally robust AFM-based SOT device.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0029522</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Antiferromagnetism ; Applied physics ; Atomic force microscopy ; Electron energy ; Electron energy loss spectroscopy ; Electrons ; Ferromagnetism ; Heterostructures ; Insertion ; Magnesium oxide ; Magnetic anisotropy ; Magnetic switching ; Magnetization ; Modulation ; Orbital stability ; Spin-orbit interactions ; Thermal stability ; Thickness ; Torque</subject><ispartof>Applied physics letters, 2020-11, Vol.117 (21)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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However, the low thermal stability, weak perpendicular magnetic anisotropy (PMA), and indistinctive SOT of these AFM/FM heterostructures pose challenges to the practical application. Here, through the insertion of a thin W layer between the IrMn and CoFeB layers, we show that much larger effective PMA fields are obtained with annealing stability to 300 °C, which is guaranteed by the prevention of Mn diffusion via W insertion as shown in spherical aberration corrected transmission electron microscopy and atomic-resolution electron energy-loss spectroscopy measurement results. Furthermore, the spin–orbit torque is effectively tuned by changing the W layer thickness via modulation of the interfacial spin–orbit coupling at IrMn/W/CoFeB interfaces, which was reported to degrade the interface spin transparency for the spin currents. Finally, field-free magnetization switching was achieved with comparable exchange bias fields to samples without W insertion. This work demonstrates an effective strategy for improving the performance of the thermally robust AFM-based SOT device.</description><subject>Antiferromagnetism</subject><subject>Applied physics</subject><subject>Atomic force microscopy</subject><subject>Electron energy</subject><subject>Electron energy loss spectroscopy</subject><subject>Electrons</subject><subject>Ferromagnetism</subject><subject>Heterostructures</subject><subject>Insertion</subject><subject>Magnesium oxide</subject><subject>Magnetic anisotropy</subject><subject>Magnetic switching</subject><subject>Magnetization</subject><subject>Modulation</subject><subject>Orbital stability</subject><subject>Spin-orbit interactions</subject><subject>Thermal stability</subject><subject>Thickness</subject><subject>Torque</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqdkM1KAzEUhYMoWKsL3yDgSmHa_MxfllqsFlq6UVyGTJJpU6eTMckI3fkOvqFPYmoF927u5cB3zr0cAC4xGmGU03E2QoiwjJAjMMCoKBKKcXkMBgghmuQsw6fgzPtNlBmhdAD8wqq-EcHYFtoahrV2W9FAH0RlGhN2ULQK-s60Xx-f1lUmwGDdW6-haeHMLdrxxE713XixWkaP62XonfYxxtl-tYYi2G0URr7Cl-jw2u0PnYOTWjReX_zuIXie3j9NHpP58mE2uZ0nkpIiJBXOCVaVqFglUiQ1UyjDhMWhKlaXqsiYVCgtJd6rlJa5EkLWTOhClEpLOgRXh9zO2fiyD3xje9fGk5ykOSWxjjyP1PWBks5673TNO2e2wu04RnzfKc_4b6eRvTmwXprwU9r_4Hfr_kDeqZp-A7m_h9g</recordid><startdate>20201123</startdate><enddate>20201123</enddate><creator>Xiong, Danrong</creator><creator>Peng, Shouzhong</creator><creator>Lu, Jiaqi</creator><creator>Li, Weixiang</creator><creator>Wu, Hao</creator><creator>Li, Zhi</creator><creator>Cheng, Houyi</creator><creator>Wang, Yuyan</creator><creator>Back, Christian H.</creator><creator>Wang, Kang L.</creator><creator>Zhao, Weisheng</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0715-2125</orcidid><orcidid>https://orcid.org/0000-0001-8088-0404</orcidid><orcidid>https://orcid.org/0000-0001-9120-6212</orcidid><orcidid>https://orcid.org/0000-0002-8967-7178</orcidid><orcidid>https://orcid.org/0000-0001-6024-2114</orcidid></search><sort><creationdate>20201123</creationdate><title>Modulation of thermal stability and spin–orbit torque in IrMn/CoFeB/MgO structures through atom thick W insertion</title><author>Xiong, Danrong ; 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However, the low thermal stability, weak perpendicular magnetic anisotropy (PMA), and indistinctive SOT of these AFM/FM heterostructures pose challenges to the practical application. Here, through the insertion of a thin W layer between the IrMn and CoFeB layers, we show that much larger effective PMA fields are obtained with annealing stability to 300 °C, which is guaranteed by the prevention of Mn diffusion via W insertion as shown in spherical aberration corrected transmission electron microscopy and atomic-resolution electron energy-loss spectroscopy measurement results. Furthermore, the spin–orbit torque is effectively tuned by changing the W layer thickness via modulation of the interfacial spin–orbit coupling at IrMn/W/CoFeB interfaces, which was reported to degrade the interface spin transparency for the spin currents. Finally, field-free magnetization switching was achieved with comparable exchange bias fields to samples without W insertion. 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subjects | Antiferromagnetism Applied physics Atomic force microscopy Electron energy Electron energy loss spectroscopy Electrons Ferromagnetism Heterostructures Insertion Magnesium oxide Magnetic anisotropy Magnetic switching Magnetization Modulation Orbital stability Spin-orbit interactions Thermal stability Thickness Torque |
title | Modulation of thermal stability and spin–orbit torque in IrMn/CoFeB/MgO structures through atom thick W insertion |
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