Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors

In this work, we present a procedure to grow Cu12Sb4S13 and Cu3SbS4 thin films consisting of the deposition of simultaneously sputtered metal precursors followed by a annealing treatment in a sulphur atmosphere. The selection of the ternary phase is performed by adjusting the sulphur evaporation tem...

Full description

Saved in:
Bibliographic Details
Published in:Journal of alloys and compounds 2019-08, Vol.797, p.1359-1366
Main Authors: Fernandes, P.A., Shongalova, A., da Cunha, A.F., Teixeira, J.P., Leitão, J.P., Cunha, J.M.V., Bose, S., Salomé, P.M.P., Correia, M.R.
Format: Article
Language:English
Subjects:
Chalcogenization
Composition
Copper
Evaporation
Magnetron sputtering
Morphology
Optical properties
Precursors
Raman spectra
RF magnetron sputtering
Scanning electron microscopy
Structural analysis
Sulfosalt
Sulfur
Ternary systems
Thin films
X-ray diffraction
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we present a procedure to grow Cu12Sb4S13 and Cu3SbS4 thin films consisting of the deposition of simultaneously sputtered metal precursors followed by a annealing treatment in a sulphur atmosphere. The selection of the ternary phase is performed by adjusting the sulphur evaporation temperature in the chalcogenization process. It is shown that for a sulphur evaporation temperature of 140 ∘C the predominant phase is Cu12Sb4S13 while for 180 ∘C the predominant phase is Cu3SbS4. In order to ensure precursor composition homogeneity, the Cu-Sb metallic precursors are deposited simultaneously by RF magnetron sputtering using adjustable segmented targets. The morphological characterization of the films was made by scanning electron microscopy and the composition was analysed by energy dispersive spectroscopy. The structural analysis and phase identification were performed by X-ray diffraction and Raman scattering. The optical properties were studied on films deposited directly on bare glass and the optical bandgap energies of 1.47 eV and 0.89 eV for Cu12Sb4S13 and Cu3SbS4, respectively, were determined. •Cu12Sb4S13 and Cu3SbS4 thin films using different sulphur evaporation temperature.•Simultaneous metal precursors using RF sputtering and segmented Cu-Sb targets.•Crystalline phase identification by XRD, Raman scattering and EDS.•Cu12Sb4S13 and Cu3SbS4 show direct band gap with 1.47 eV and 0.89 eV, respectively.•PL measurements show a peak at 0.89 eV for the Cu3SbS4 sample.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2019.05.149