Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001)

We investigated native oxides on GaN(0001) using high-resolution scanning transmission electron microscopy (STEM) and ultraviolet photoemission spectroscopy (UPS). As a result, it was confirmed that the native oxides on both n-type and p-type GaN(0001) with a thickness of ∼1 nm were not amorphous bu...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-09, Vol.57 (9), p.98003
Main Authors: Irokawa, Yoshihiro, Mitsuishi, Kazutaka, Suzuki, Taku T., Yuge, Kazuya, Ohi, Akihiko, Nabatame, Toshihide, Ohnishi, Tsuyoshi, Kimoto, Koji, Koide, Yasuo
Format: Article
Language:English
Subjects:
Electrons
Lattice matching
Microscopy
Oxides
Photoelectric emission
Photoelectron spectroscopy
Scanning electron microscopy
Scanning transmission electron microscopy
Spectrum analysis
Transmission electron microscopy
Ultraviolet spectroscopy
Valence band
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated native oxides on GaN(0001) using high-resolution scanning transmission electron microscopy (STEM) and ultraviolet photoemission spectroscopy (UPS). As a result, it was confirmed that the native oxides on both n-type and p-type GaN(0001) with a thickness of ∼1 nm were not amorphous but crystalline with lattice-matched structures to GaN, as we reported previously [Y. Irokawa et al., Jpn J. Appl. Phys. 56, 128004 (2017)]. Moreover, the UPS spectra of native oxides on n-type GaN(0001), which were similar to the reported clean GaN(0001) spectra, showed the existence of surface states at the valence band maximum (VBM), reflecting the defective quality of the native oxides.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.098003