Effects of indium surfactant on growth and characteristics of  (112¯2) plane AlGaN-based multiple quantum wells

High quality semi-polar (112̲2) (112¯2) plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on (101̲0) (101¯0) m-plane sapphire substrates with metal-organic chemical vapor deposition (MOCVD) technology and the effects of indium (In) surfactant on the structural and optical prope...

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Bibliographic Details
Published in:Optical materials express 2018-01, Vol.8 (1), p.24
Main Authors: Dai, Qian, Zhang, Xiong, Liang, Zongwen, Yang, Gang, Wu, Zili, Chen, Shuai, Zhao, Jianguo, Meng, Caimin, Wang, Jianlu, Cui, Yiping
Format: Article
Language:English
Subjects:
Indium
Metalorganic chemical vapor deposition
Morphology
Optical properties
Organic chemicals
Organic chemistry
Quantum efficiency
Quantum wells
Radiative recombination
Sapphire
Substrates
Surfactants
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Summary:High quality semi-polar (112̲2) (112¯2) plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on (101̲0) (101¯0) m-plane sapphire substrates with metal-organic chemical vapor deposition (MOCVD) technology and the effects of indium (In) surfactant on the structural and optical properties of the AlGaN-based MQWs were investigated intensively. The characterization results revealed that the surface morphology as well as the crystalline quality for the semi-polar (112̲2) (112¯2) plane AlGaN MQWs could be improved remarkably by adopting In as surfactant during the MOCVD growth process. Furthermore, the integrated MQWs-related excition emission peak intensity and the radiative recombination probabilities in MQWs could be increased as well with the help of In-surfactant, resulting an enhanced internal quantum efficiency.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.8.000024