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Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
•Doping of Ga(Al)N layers grown at high growth temperature using different growth rates was investigated.•For the constant Mg flux, doping level in GaN:Mg layers does not depend on used growth rate.•Increase in Mg concentration for AlGaN:Mg layers comparing to GaN:Mg layers grown at the same conditi...
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| Published in: | Journal of crystal growth 2018-01, Vol.482, p.56-60 |
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| Main Authors: | , , , , , , , |
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| Language: | English |
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| container_end_page | 60 |
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| container_start_page | 56 |
| container_title | Journal of crystal growth |
| container_volume | 482 |
| creator | Turski, Henryk Muzioł, Grzegorz Siekacz, Marcin Wolny, Pawel Szkudlarek, Krzesimir Feduniewicz-Żmuda, Anna Dybko, Krzysztof Skierbiszewski, Czeslaw |
| description | •Doping of Ga(Al)N layers grown at high growth temperature using different growth rates was investigated.•For the constant Mg flux, doping level in GaN:Mg layers does not depend on used growth rate.•Increase in Mg concentration for AlGaN:Mg layers comparing to GaN:Mg layers grown at the same conditions was observed.
Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration. |
| doi_str_mv | 10.1016/j.jcrysgro.2017.11.001 |
| format | article |
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Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2017.11.001</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping ; A3. Molecular beam epitaxy ; Aluminum ; B1. Gallium nitride ; B1. Nitrides ; Doping ; Gallium nitrides ; Magnesium ; Mercury cadmium telluride epitaxy ; Molecular beam epitaxy ; Rates ; Silicon ; Studies ; Substrates</subject><ispartof>Journal of crystal growth, 2018-01, Vol.482, p.56-60</ispartof><rights>2017</rights><rights>Copyright Elsevier BV Jan 15, 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-74134dab87d39254e4f08dac2d2a8f059288e58c1f6db9e53079596a5e87448b3</citedby><cites>FETCH-LOGICAL-c340t-74134dab87d39254e4f08dac2d2a8f059288e58c1f6db9e53079596a5e87448b3</cites><orcidid>0000-0002-2686-9842</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Turski, Henryk</creatorcontrib><creatorcontrib>Muzioł, Grzegorz</creatorcontrib><creatorcontrib>Siekacz, Marcin</creatorcontrib><creatorcontrib>Wolny, Pawel</creatorcontrib><creatorcontrib>Szkudlarek, Krzesimir</creatorcontrib><creatorcontrib>Feduniewicz-Żmuda, Anna</creatorcontrib><creatorcontrib>Dybko, Krzysztof</creatorcontrib><creatorcontrib>Skierbiszewski, Czeslaw</creatorcontrib><title>Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE</title><title>Journal of crystal growth</title><description>•Doping of Ga(Al)N layers grown at high growth temperature using different growth rates was investigated.•For the constant Mg flux, doping level in GaN:Mg layers does not depend on used growth rate.•Increase in Mg concentration for AlGaN:Mg layers comparing to GaN:Mg layers grown at the same conditions was observed.
Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.</description><subject>A1. Doping</subject><subject>A3. Molecular beam epitaxy</subject><subject>Aluminum</subject><subject>B1. Gallium nitride</subject><subject>B1. Nitrides</subject><subject>Doping</subject><subject>Gallium nitrides</subject><subject>Magnesium</subject><subject>Mercury cadmium telluride epitaxy</subject><subject>Molecular beam epitaxy</subject><subject>Rates</subject><subject>Silicon</subject><subject>Studies</subject><subject>Substrates</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqFUE9PwyAcJUYT5_QrGBLPrUCh0Ju6zLlk04ueCQU6abZSoXPpt5dlevbyfoff-5P3ALjFKMcIl_dt3uowxk3wOUGY5xjnCOEzMMGCFxlDiJyDSUKSIULFJbiKsUWJUWI0ActF8IfhEwY1WOg6Y3uboNMW-gauN9D43nWb9IEL9QpTxqGD9Qj7rYo7lakYXRysgeun-TW4aNQ22pvfOwUfz_P32Uu2elssZ4-rTBcUDRmnuKBG1YKboiKMWtogYZQmhijRIFYRISwTGjelqSvLCsQrVpWKWcEpFXUxBXcn3z74r72Ng2z9PnQpUqb6hPESkyqxyhNLBx9jsI3sg9upMEqM5HE22cq_2Y46LjGWaZQkfDgJberw7WyQUbvjIMYFqwdpvPvP4gfNYHgA</recordid><startdate>20180115</startdate><enddate>20180115</enddate><creator>Turski, Henryk</creator><creator>Muzioł, Grzegorz</creator><creator>Siekacz, Marcin</creator><creator>Wolny, Pawel</creator><creator>Szkudlarek, Krzesimir</creator><creator>Feduniewicz-Żmuda, Anna</creator><creator>Dybko, Krzysztof</creator><creator>Skierbiszewski, Czeslaw</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2686-9842</orcidid></search><sort><creationdate>20180115</creationdate><title>Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE</title><author>Turski, Henryk ; Muzioł, Grzegorz ; Siekacz, Marcin ; Wolny, Pawel ; Szkudlarek, Krzesimir ; Feduniewicz-Żmuda, Anna ; Dybko, Krzysztof ; Skierbiszewski, Czeslaw</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-74134dab87d39254e4f08dac2d2a8f059288e58c1f6db9e53079596a5e87448b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>A1. Doping</topic><topic>A3. Molecular beam epitaxy</topic><topic>Aluminum</topic><topic>B1. Gallium nitride</topic><topic>B1. Nitrides</topic><topic>Doping</topic><topic>Gallium nitrides</topic><topic>Magnesium</topic><topic>Mercury cadmium telluride epitaxy</topic><topic>Molecular beam epitaxy</topic><topic>Rates</topic><topic>Silicon</topic><topic>Studies</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Turski, Henryk</creatorcontrib><creatorcontrib>Muzioł, Grzegorz</creatorcontrib><creatorcontrib>Siekacz, Marcin</creatorcontrib><creatorcontrib>Wolny, Pawel</creatorcontrib><creatorcontrib>Szkudlarek, Krzesimir</creatorcontrib><creatorcontrib>Feduniewicz-Żmuda, Anna</creatorcontrib><creatorcontrib>Dybko, Krzysztof</creatorcontrib><creatorcontrib>Skierbiszewski, Czeslaw</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Turski, Henryk</au><au>Muzioł, Grzegorz</au><au>Siekacz, Marcin</au><au>Wolny, Pawel</au><au>Szkudlarek, Krzesimir</au><au>Feduniewicz-Żmuda, Anna</au><au>Dybko, Krzysztof</au><au>Skierbiszewski, Czeslaw</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE</atitle><jtitle>Journal of crystal growth</jtitle><date>2018-01-15</date><risdate>2018</risdate><volume>482</volume><spage>56</spage><epage>60</epage><pages>56-60</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•Doping of Ga(Al)N layers grown at high growth temperature using different growth rates was investigated.•For the constant Mg flux, doping level in GaN:Mg layers does not depend on used growth rate.•Increase in Mg concentration for AlGaN:Mg layers comparing to GaN:Mg layers grown at the same conditions was observed.
Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2017.11.001</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-2686-9842</orcidid></addata></record> |
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| ispartof | Journal of crystal growth, 2018-01, Vol.482, p.56-60 |
| issn | 0022-0248 1873-5002 |
| language | eng |
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| source | ScienceDirect Journals |
| subjects | A1. Doping A3. Molecular beam epitaxy Aluminum B1. Gallium nitride B1. Nitrides Doping Gallium nitrides Magnesium Mercury cadmium telluride epitaxy Molecular beam epitaxy Rates Silicon Studies Substrates |
| title | Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE |
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