Electrical characterization of 4H-SiC Schottky diodes with RuWOx Schottky contacts before and after irradiation by fast electrons

The impact of radiation damage on the device performance of 4H‐SiC Schottky barrier diodes (SBDs) with RuWOx Schottky contacts, which were irradiated at room temperature with 9 MeV electrons (absorbed dose of 50 Gy), is studied by current–voltage (I–V) and capacitance–voltage (C–V) methods measured...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2012-07, Vol.209 (7), p.1384-1389
Main Authors: Benkovska, Jana, Stuchlikova, Lubica, Buc, Dalibor, Čaplovic, Lubomir
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Language:English
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4H-SiC Schottky diodes
electrical characterization
fast electron irradiation
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Stuchlikova, Lubica
Buc, Dalibor
Čaplovic, Lubomir
description The impact of radiation damage on the device performance of 4H‐SiC Schottky barrier diodes (SBDs) with RuWOx Schottky contacts, which were irradiated at room temperature with 9 MeV electrons (absorbed dose of 50 Gy), is studied by current–voltage (I–V) and capacitance–voltage (C–V) methods measured in the temperature range of 85–400 K. We have observed the radiation‐induced decrease of the Schottky barrier height (SBH) from original Φb = 1.13–1.06 eV, increase of the ideality factor from n = 1.14 to 1.39 and the noticeable increase of the saturation current from IS = 7.29 to 77.31 pA and the series resistance from RS = 2.9 to 7.9 Ω calculated from I–V measurements at T = 300 K. As a result of electron irradiation deep energy levels originated in the structure and caused the increase of serial resistance and leakage current. The DLTS results have shown several deep energy levels, e.g., EC – 0.637 eV pointing to radiation‐induced Z1/2 structural defects in SiC. No degradation is observed from the measured C–V curves. The experimental value of the effective Richardson constant A* = 50.68 A/cm2/K2 for the irradiated sample was calculated from the modified Richardson plot.
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fullrecord <record><control><sourceid>proquest_wiley</sourceid><recordid>TN_cdi_proquest_journals_1322171962</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2932830211</sourcerecordid><originalsourceid>FETCH-LOGICAL-i2019-97366d40ccaefa50237c9973c4f029e1119a7d9f0bc1aea72d1d55ebd71923d13</originalsourceid><addsrcrecordid>eNpFUEtPAjEQ3hhNVPTquYnnxU73UXs0RFBDxLgauDVD2w1F3GJbInjzn7uIwdO8vkfmS5ILoF2glF0tQ8AuowCMF4U4SE7gumRpmYE43PeUHienIcwpzYucw0nyfbswKnqrcEHUDD2qaLz9wmhdQ1xN8ru0sj1SqZmL8W1DtHXaBPJp44w8r8aj9f9JuSa29ECmpnbeEGw0wbqVI9Z71HanOd2QGkMk5tfXNeEsOapxEcz5X-0kr_3bl95dOhwN7ns3w9S2P4lU8KwsdU6VQlNjQVnGlWiXKq8pEwYABHItajpVgAY506CLwkw1B8EyDVknudzpLr37WJkQ5dytfNNaSsgYgxZXshYldqhPuzAbufT2Hf1GApXbjOU2Y7nPWD5V1c1-arnpjmtDNOs9F_2bLHnGCzl-HEh46E-qAZ1Imv0Am6ODtw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1322171962</pqid></control><display><type>article</type><title>Electrical characterization of 4H-SiC Schottky diodes with RuWOx Schottky contacts before and after irradiation by fast electrons</title><source>Wiley-Blackwell Journals</source><creator>Benkovska, Jana ; Stuchlikova, Lubica ; Buc, Dalibor ; Čaplovic, Lubomir</creator><creatorcontrib>Benkovska, Jana ; Stuchlikova, Lubica ; Buc, Dalibor ; Čaplovic, Lubomir</creatorcontrib><description>The impact of radiation damage on the device performance of 4H‐SiC Schottky barrier diodes (SBDs) with RuWOx Schottky contacts, which were irradiated at room temperature with 9 MeV electrons (absorbed dose of 50 Gy), is studied by current–voltage (I–V) and capacitance–voltage (C–V) methods measured in the temperature range of 85–400 K. We have observed the radiation‐induced decrease of the Schottky barrier height (SBH) from original Φb = 1.13–1.06 eV, increase of the ideality factor from n = 1.14 to 1.39 and the noticeable increase of the saturation current from IS = 7.29 to 77.31 pA and the series resistance from RS = 2.9 to 7.9 Ω calculated from I–V measurements at T = 300 K. As a result of electron irradiation deep energy levels originated in the structure and caused the increase of serial resistance and leakage current. The DLTS results have shown several deep energy levels, e.g., EC – 0.637 eV pointing to radiation‐induced Z1/2 structural defects in SiC. No degradation is observed from the measured C–V curves. The experimental value of the effective Richardson constant A* = 50.68 A/cm2/K2 for the irradiated sample was calculated from the modified Richardson plot.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201127559</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>4H-SiC Schottky diodes ; electrical characterization ; fast electron irradiation</subject><ispartof>Physica status solidi. A, Applications and materials science, 2012-07, Vol.209 (7), p.1384-1389</ispartof><rights>Copyright © 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><rights>Copyright © 2012 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.201127559$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.201127559$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,786,790,27957,27958,50923,51032</link.rule.ids></links><search><creatorcontrib>Benkovska, Jana</creatorcontrib><creatorcontrib>Stuchlikova, Lubica</creatorcontrib><creatorcontrib>Buc, Dalibor</creatorcontrib><creatorcontrib>Čaplovic, Lubomir</creatorcontrib><title>Electrical characterization of 4H-SiC Schottky diodes with RuWOx Schottky contacts before and after irradiation by fast electrons</title><title>Physica status solidi. A, Applications and materials science</title><addtitle>Phys. Status Solidi A</addtitle><description>The impact of radiation damage on the device performance of 4H‐SiC Schottky barrier diodes (SBDs) with RuWOx Schottky contacts, which were irradiated at room temperature with 9 MeV electrons (absorbed dose of 50 Gy), is studied by current–voltage (I–V) and capacitance–voltage (C–V) methods measured in the temperature range of 85–400 K. We have observed the radiation‐induced decrease of the Schottky barrier height (SBH) from original Φb = 1.13–1.06 eV, increase of the ideality factor from n = 1.14 to 1.39 and the noticeable increase of the saturation current from IS = 7.29 to 77.31 pA and the series resistance from RS = 2.9 to 7.9 Ω calculated from I–V measurements at T = 300 K. As a result of electron irradiation deep energy levels originated in the structure and caused the increase of serial resistance and leakage current. The DLTS results have shown several deep energy levels, e.g., EC – 0.637 eV pointing to radiation‐induced Z1/2 structural defects in SiC. No degradation is observed from the measured C–V curves. The experimental value of the effective Richardson constant A* = 50.68 A/cm2/K2 for the irradiated sample was calculated from the modified Richardson plot.</description><subject>4H-SiC Schottky diodes</subject><subject>electrical characterization</subject><subject>fast electron irradiation</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNpFUEtPAjEQ3hhNVPTquYnnxU73UXs0RFBDxLgauDVD2w1F3GJbInjzn7uIwdO8vkfmS5ILoF2glF0tQ8AuowCMF4U4SE7gumRpmYE43PeUHienIcwpzYucw0nyfbswKnqrcEHUDD2qaLz9wmhdQ1xN8ru0sj1SqZmL8W1DtHXaBPJp44w8r8aj9f9JuSa29ECmpnbeEGw0wbqVI9Z71HanOd2QGkMk5tfXNeEsOapxEcz5X-0kr_3bl95dOhwN7ns3w9S2P4lU8KwsdU6VQlNjQVnGlWiXKq8pEwYABHItajpVgAY506CLwkw1B8EyDVknudzpLr37WJkQ5dytfNNaSsgYgxZXshYldqhPuzAbufT2Hf1GApXbjOU2Y7nPWD5V1c1-arnpjmtDNOs9F_2bLHnGCzl-HEh46E-qAZ1Imv0Am6ODtw</recordid><startdate>201207</startdate><enddate>201207</enddate><creator>Benkovska, Jana</creator><creator>Stuchlikova, Lubica</creator><creator>Buc, Dalibor</creator><creator>Čaplovic, Lubomir</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201207</creationdate><title>Electrical characterization of 4H-SiC Schottky diodes with RuWOx Schottky contacts before and after irradiation by fast electrons</title><author>Benkovska, Jana ; Stuchlikova, Lubica ; Buc, Dalibor ; Čaplovic, Lubomir</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2019-97366d40ccaefa50237c9973c4f029e1119a7d9f0bc1aea72d1d55ebd71923d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>4H-SiC Schottky diodes</topic><topic>electrical characterization</topic><topic>fast electron irradiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Benkovska, Jana</creatorcontrib><creatorcontrib>Stuchlikova, Lubica</creatorcontrib><creatorcontrib>Buc, Dalibor</creatorcontrib><creatorcontrib>Čaplovic, Lubomir</creatorcontrib><collection>Istex</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Benkovska, Jana</au><au>Stuchlikova, Lubica</au><au>Buc, Dalibor</au><au>Čaplovic, Lubomir</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical characterization of 4H-SiC Schottky diodes with RuWOx Schottky contacts before and after irradiation by fast electrons</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>Phys. Status Solidi A</addtitle><date>2012-07</date><risdate>2012</risdate><volume>209</volume><issue>7</issue><spage>1384</spage><epage>1389</epage><pages>1384-1389</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><notes>istex:B310F446D8E3577E7B2D2348DC3BB6D8A5C8A03F</notes><notes>ArticleID:PSSA201127559</notes><notes>ark:/67375/WNG-1JFXSG0X-0</notes><abstract>The impact of radiation damage on the device performance of 4H‐SiC Schottky barrier diodes (SBDs) with RuWOx Schottky contacts, which were irradiated at room temperature with 9 MeV electrons (absorbed dose of 50 Gy), is studied by current–voltage (I–V) and capacitance–voltage (C–V) methods measured in the temperature range of 85–400 K. We have observed the radiation‐induced decrease of the Schottky barrier height (SBH) from original Φb = 1.13–1.06 eV, increase of the ideality factor from n = 1.14 to 1.39 and the noticeable increase of the saturation current from IS = 7.29 to 77.31 pA and the series resistance from RS = 2.9 to 7.9 Ω calculated from I–V measurements at T = 300 K. As a result of electron irradiation deep energy levels originated in the structure and caused the increase of serial resistance and leakage current. The DLTS results have shown several deep energy levels, e.g., EC – 0.637 eV pointing to radiation‐induced Z1/2 structural defects in SiC. No degradation is observed from the measured C–V curves. The experimental value of the effective Richardson constant A* = 50.68 A/cm2/K2 for the irradiated sample was calculated from the modified Richardson plot.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.201127559</doi><tpages>6</tpages></addata></record>
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subjects 4H-SiC Schottky diodes
electrical characterization
fast electron irradiation
title Electrical characterization of 4H-SiC Schottky diodes with RuWOx Schottky contacts before and after irradiation by fast electrons
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T23%3A29%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_wiley&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20characterization%20of%204H-SiC%20Schottky%20diodes%20with%20RuWOx%20Schottky%20contacts%20before%20and%20after%20irradiation%20by%20fast%20electrons&rft.jtitle=Physica%20status%20solidi.%20A,%20Applications%20and%20materials%20science&rft.au=Benkovska,%20Jana&rft.date=2012-07&rft.volume=209&rft.issue=7&rft.spage=1384&rft.epage=1389&rft.pages=1384-1389&rft.issn=1862-6300&rft.eissn=1862-6319&rft_id=info:doi/10.1002/pssa.201127559&rft_dat=%3Cproquest_wiley%3E2932830211%3C/proquest_wiley%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i2019-97366d40ccaefa50237c9973c4f029e1119a7d9f0bc1aea72d1d55ebd71923d13%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1322171962&rft_id=info:pmid/&rfr_iscdi=true