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Characterization of split gate flash memory endurance degradation mechanism
In this paper, the weak erase failure mechanism of a source side injected split gate flash memory after endurance (ENDU) cycling test has been identified through a 2T cell structure. In general, charge trapping in the inter poly oxide (IPO) after Fowler Nordheim tunneling erase is considered to domi...
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| creator | Wu, T.I. Chih, Y.D. Chen, S.H. Wang, W. Mi-Chang Chang Shih, J.R. Chin, H.W. Wu, K. |
| description | In this paper, the weak erase failure mechanism of a source side injected split gate flash memory after endurance (ENDU) cycling test has been identified through a 2T cell structure. In general, charge trapping in the inter poly oxide (IPO) after Fowler Nordheim tunneling erase is considered to dominate the weak erase failure. However from this study, it is found that cell current reduction after erase is not due to erase-induced tunneling oxide degradation. On the contrary, program-induced electron trapping in the coupling oxide dominates the cell current reduction after long term endurance cycling stress. |
| doi_str_mv | 10.1109/IPFA.2004.1345561 |
| format | conference_proceeding |
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In general, charge trapping in the inter poly oxide (IPO) after Fowler Nordheim tunneling erase is considered to dominate the weak erase failure. However from this study, it is found that cell current reduction after erase is not due to erase-induced tunneling oxide degradation. On the contrary, program-induced electron trapping in the coupling oxide dominates the cell current reduction after long term endurance cycling stress.</description><identifier>ISBN: 9780780384545</identifier><identifier>ISBN: 0780384547</identifier><identifier>DOI: 10.1109/IPFA.2004.1345561</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Character generation ; Degradation ; Design. Technologies. Operation analysis. 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Testing</subject><subject>Electron traps</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Failure analysis</subject><subject>Flash memory</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Nonvolatile memory</subject><subject>Performance evaluation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| identifier | ISBN: 9780780384545 |
| ispartof | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004, p.115-117 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Character generation Degradation Design. Technologies. Operation analysis. Testing Electron traps Electronics Exact sciences and technology Failure analysis Flash memory Integrated circuits Integrated circuits by function (including memories and processors) Nonvolatile memory Performance evaluation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Split gate flash memory cells Testing Tunneling |
| title | Characterization of split gate flash memory endurance degradation mechanism |
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