High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

We report Ge p-channel MOSFETs with a thin gate stack of Ge oxynitride and LTO on bulk Ge substrate without a Si cap layer. Excellent device characteristics (IV and CV) are achieved with subthreshold slope 82mV/dec. /spl sim/40% hole mobility enhancement is obtained over the Si control with a therma...

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Bibliographic Details
Main Authors: Huiling Shang, Okorn-Schmidt, H., Chan, K.K., Copel, M., Ott, J.A., Kozlowski, P.M., Steen, S.E., Cordes, S.A., Wong, H.-S.P., Jones, E.C., Haensch, W.E.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Applied sciences
Artificial intelligence
Dielectric devices
Dielectric substrates
Electron mobility
Electronics
Exact sciences and technology
Germanium silicon alloys
MOS capacitors
MOSFETs
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
Transistors
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Summary:We report Ge p-channel MOSFETs with a thin gate stack of Ge oxynitride and LTO on bulk Ge substrate without a Si cap layer. Excellent device characteristics (IV and CV) are achieved with subthreshold slope 82mV/dec. /spl sim/40% hole mobility enhancement is obtained over the Si control with a thermal SiO/sub 2/ gate dielectric. To our knowledge, this is the first demonstration of Ge MOSFETs with less than 10nm thick gate dielectric and less than 100mV/dec subthreshold slope.
DOI:10.1109/IEDM.2002.1175873