Loading…
Atomic scale study of polar Lomer–Cottrell and Hirth lock dislocation cores in CdTe
Dislocation cores have long dominated the electronic and optical behaviors of semiconductor devices and detailed atomic characterization is required to further explore their effects. Miniaturization of semiconductor devices to nanometre scale also puts emphasis on a material's mechanical proper...
Saved in:
| Published in: | Acta crystallographica. Section A, Foundations and advances Foundations and advances, 2014-11, Vol.70 (6), p.524-531 |
|---|---|
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c3831-934c1b116b5bb3f50515931e0bf86a6894a0d443c8a26863593ccc18431f77303 |
|---|---|
| cites | |
| container_end_page | 531 |
| container_issue | 6 |
| container_start_page | 524 |
| container_title | Acta crystallographica. Section A, Foundations and advances |
| container_volume | 70 |
| creator | Paulauskas, Tadas Buurma, Christopher Colegrove, Eric Stafford, Brian Guo, Zhao Chan, Maria K. Y. Sun, Ce Kim, Moon J. Sivananthan, Sivalingam Klie, Robert F. |
| description | Dislocation cores have long dominated the electronic and optical behaviors of semiconductor devices and detailed atomic characterization is required to further explore their effects. Miniaturization of semiconductor devices to nanometre scale also puts emphasis on a material's mechanical properties to withstand failure due to processing or operational stresses. Sessile junctions of dislocations provide barriers to propagation of mobile dislocations and may lead to work‐hardening. The sessile Lomer–Cottrell and Hirth lock dislocations, two stable lowest elastic energy stair‐rods, are studied in this paper. More specifically, using atomic resolution high‐angle annular dark‐field imaging and atomic‐column‐resolved X‐ray spectrum imaging in an aberration‐corrected scanning transmission electron microscope, dislocation core structures are examined in zinc‐blende CdTe. A procedure is outlined for atomic scale analysis of dislocation junctions which allows determination of their identity with specially tailored Burgers circuits and also formation mechanisms of the polar core structures based on Thompson's tetrahedron adapted to reactions of polar dislocations as they appear in CdTe and other zinc‐blende solids. Strain fields associated with the dislocations calculated via geometric phase analysis are found to be diffuse and free of `hot spots' that reflect compact structures and low elastic energy of the pure‐edge stair‐rods. |
| doi_str_mv | 10.1107/S2053273314019639 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1391909</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1753536346</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3831-934c1b116b5bb3f50515931e0bf86a6894a0d443c8a26863593ccc18431f77303</originalsourceid><addsrcrecordid>eNqFkb1OwzAUhSMEEhX0AdgsWFgKvrmxE49VxZ-oxAAMTJbjOMIljYvtCHXjHXhDngRXZUAwMN2rc79zpaOTZUdAzwBoeX6fU4Z5iQgFBcFR7GSjjTTZaLs_9v1sHMKCUppsLOd0lD1Oo1taTYJWnSEhDs2auJasXKc8mbul8Z_vHzMXozddR1TfkGvr4zPpnH4hjQ1pqmhdT7TzJhDbk1nzYA6zvVZ1wYy_50H2eHnxMLuezO-ubmbT-URjhTARWGioAXjN6hpbRhkwgWBo3VZc8UoUijZFgbpSOa84pqPWGqoCoS1LpHiQHW__uhCtDNpGo5-163ujowQUIKhI0OkWWnn3OpgQ5dIGneKo3rghSCgZMuRY8ISe_EIXbvB9iiCBQylYWdIqUbCltHcheNPKlbdL5dcSqNwUIv8Ukjxi63mznVn_b5DTp2k-v2WpKvwClDaK5A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1617957708</pqid></control><display><type>article</type><title>Atomic scale study of polar Lomer–Cottrell and Hirth lock dislocation cores in CdTe</title><source>Wiley</source><source>Alma/SFX Local Collection</source><creator>Paulauskas, Tadas ; Buurma, Christopher ; Colegrove, Eric ; Stafford, Brian ; Guo, Zhao ; Chan, Maria K. Y. ; Sun, Ce ; Kim, Moon J. ; Sivananthan, Sivalingam ; Klie, Robert F.</creator><creatorcontrib>Paulauskas, Tadas ; Buurma, Christopher ; Colegrove, Eric ; Stafford, Brian ; Guo, Zhao ; Chan, Maria K. Y. ; Sun, Ce ; Kim, Moon J. ; Sivananthan, Sivalingam ; Klie, Robert F. ; Argonne National Lab. (ANL), Argonne, IL (United States)</creatorcontrib><description>Dislocation cores have long dominated the electronic and optical behaviors of semiconductor devices and detailed atomic characterization is required to further explore their effects. Miniaturization of semiconductor devices to nanometre scale also puts emphasis on a material's mechanical properties to withstand failure due to processing or operational stresses. Sessile junctions of dislocations provide barriers to propagation of mobile dislocations and may lead to work‐hardening. The sessile Lomer–Cottrell and Hirth lock dislocations, two stable lowest elastic energy stair‐rods, are studied in this paper. More specifically, using atomic resolution high‐angle annular dark‐field imaging and atomic‐column‐resolved X‐ray spectrum imaging in an aberration‐corrected scanning transmission electron microscope, dislocation core structures are examined in zinc‐blende CdTe. A procedure is outlined for atomic scale analysis of dislocation junctions which allows determination of their identity with specially tailored Burgers circuits and also formation mechanisms of the polar core structures based on Thompson's tetrahedron adapted to reactions of polar dislocations as they appear in CdTe and other zinc‐blende solids. Strain fields associated with the dislocations calculated via geometric phase analysis are found to be diffuse and free of `hot spots' that reflect compact structures and low elastic energy of the pure‐edge stair‐rods.</description><identifier>ISSN: 2053-2733</identifier><identifier>ISSN: 0108-7673</identifier><identifier>EISSN: 2053-2733</identifier><identifier>DOI: 10.1107/S2053273314019639</identifier><language>eng</language><publisher>5 Abbey Square, Chester, Cheshire CH1 2HU, England: International Union of Crystallography</publisher><subject>Atomic structure ; Atoms & subatomic particles ; Cadmium tellurides ; CdTe ; Crystallography ; dislocation cores ; Dislocation mobility ; Dislocations ; Electronics ; HAADF ; Hirth lock dislocations ; Imaging ; Locks ; Lomer-Cottrell dislocations ; Scanning electron microscopy ; Semiconductor devices ; Semiconductors ; stair-rod dislocations ; STEM ; XEDS</subject><ispartof>Acta crystallographica. Section A, Foundations and advances, 2014-11, Vol.70 (6), p.524-531</ispartof><rights>International Union of Crystallography, 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3831-934c1b116b5bb3f50515931e0bf86a6894a0d443c8a26863593ccc18431f77303</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1107%2FS2053273314019639$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1107%2FS2053273314019639$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>230,315,786,790,891,27957,27958,50923,51032</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1391909$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Paulauskas, Tadas</creatorcontrib><creatorcontrib>Buurma, Christopher</creatorcontrib><creatorcontrib>Colegrove, Eric</creatorcontrib><creatorcontrib>Stafford, Brian</creatorcontrib><creatorcontrib>Guo, Zhao</creatorcontrib><creatorcontrib>Chan, Maria K. Y.</creatorcontrib><creatorcontrib>Sun, Ce</creatorcontrib><creatorcontrib>Kim, Moon J.</creatorcontrib><creatorcontrib>Sivananthan, Sivalingam</creatorcontrib><creatorcontrib>Klie, Robert F.</creatorcontrib><creatorcontrib>Argonne National Lab. (ANL), Argonne, IL (United States)</creatorcontrib><title>Atomic scale study of polar Lomer–Cottrell and Hirth lock dislocation cores in CdTe</title><title>Acta crystallographica. Section A, Foundations and advances</title><description>Dislocation cores have long dominated the electronic and optical behaviors of semiconductor devices and detailed atomic characterization is required to further explore their effects. Miniaturization of semiconductor devices to nanometre scale also puts emphasis on a material's mechanical properties to withstand failure due to processing or operational stresses. Sessile junctions of dislocations provide barriers to propagation of mobile dislocations and may lead to work‐hardening. The sessile Lomer–Cottrell and Hirth lock dislocations, two stable lowest elastic energy stair‐rods, are studied in this paper. More specifically, using atomic resolution high‐angle annular dark‐field imaging and atomic‐column‐resolved X‐ray spectrum imaging in an aberration‐corrected scanning transmission electron microscope, dislocation core structures are examined in zinc‐blende CdTe. A procedure is outlined for atomic scale analysis of dislocation junctions which allows determination of their identity with specially tailored Burgers circuits and also formation mechanisms of the polar core structures based on Thompson's tetrahedron adapted to reactions of polar dislocations as they appear in CdTe and other zinc‐blende solids. Strain fields associated with the dislocations calculated via geometric phase analysis are found to be diffuse and free of `hot spots' that reflect compact structures and low elastic energy of the pure‐edge stair‐rods.</description><subject>Atomic structure</subject><subject>Atoms & subatomic particles</subject><subject>Cadmium tellurides</subject><subject>CdTe</subject><subject>Crystallography</subject><subject>dislocation cores</subject><subject>Dislocation mobility</subject><subject>Dislocations</subject><subject>Electronics</subject><subject>HAADF</subject><subject>Hirth lock dislocations</subject><subject>Imaging</subject><subject>Locks</subject><subject>Lomer-Cottrell dislocations</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>stair-rod dislocations</subject><subject>STEM</subject><subject>XEDS</subject><issn>2053-2733</issn><issn>0108-7673</issn><issn>2053-2733</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkb1OwzAUhSMEEhX0AdgsWFgKvrmxE49VxZ-oxAAMTJbjOMIljYvtCHXjHXhDngRXZUAwMN2rc79zpaOTZUdAzwBoeX6fU4Z5iQgFBcFR7GSjjTTZaLs_9v1sHMKCUppsLOd0lD1Oo1taTYJWnSEhDs2auJasXKc8mbul8Z_vHzMXozddR1TfkGvr4zPpnH4hjQ1pqmhdT7TzJhDbk1nzYA6zvVZ1wYy_50H2eHnxMLuezO-ubmbT-URjhTARWGioAXjN6hpbRhkwgWBo3VZc8UoUijZFgbpSOa84pqPWGqoCoS1LpHiQHW__uhCtDNpGo5-163ujowQUIKhI0OkWWnn3OpgQ5dIGneKo3rghSCgZMuRY8ISe_EIXbvB9iiCBQylYWdIqUbCltHcheNPKlbdL5dcSqNwUIv8Ukjxi63mznVn_b5DTp2k-v2WpKvwClDaK5A</recordid><startdate>201411</startdate><enddate>201411</enddate><creator>Paulauskas, Tadas</creator><creator>Buurma, Christopher</creator><creator>Colegrove, Eric</creator><creator>Stafford, Brian</creator><creator>Guo, Zhao</creator><creator>Chan, Maria K. Y.</creator><creator>Sun, Ce</creator><creator>Kim, Moon J.</creator><creator>Sivananthan, Sivalingam</creator><creator>Klie, Robert F.</creator><general>International Union of Crystallography</general><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7QQ</scope><scope>OTOTI</scope></search><sort><creationdate>201411</creationdate><title>Atomic scale study of polar Lomer–Cottrell and Hirth lock dislocation cores in CdTe</title><author>Paulauskas, Tadas ; Buurma, Christopher ; Colegrove, Eric ; Stafford, Brian ; Guo, Zhao ; Chan, Maria K. Y. ; Sun, Ce ; Kim, Moon J. ; Sivananthan, Sivalingam ; Klie, Robert F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3831-934c1b116b5bb3f50515931e0bf86a6894a0d443c8a26863593ccc18431f77303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Atomic structure</topic><topic>Atoms & subatomic particles</topic><topic>Cadmium tellurides</topic><topic>CdTe</topic><topic>Crystallography</topic><topic>dislocation cores</topic><topic>Dislocation mobility</topic><topic>Dislocations</topic><topic>Electronics</topic><topic>HAADF</topic><topic>Hirth lock dislocations</topic><topic>Imaging</topic><topic>Locks</topic><topic>Lomer-Cottrell dislocations</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>stair-rod dislocations</topic><topic>STEM</topic><topic>XEDS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Paulauskas, Tadas</creatorcontrib><creatorcontrib>Buurma, Christopher</creatorcontrib><creatorcontrib>Colegrove, Eric</creatorcontrib><creatorcontrib>Stafford, Brian</creatorcontrib><creatorcontrib>Guo, Zhao</creatorcontrib><creatorcontrib>Chan, Maria K. Y.</creatorcontrib><creatorcontrib>Sun, Ce</creatorcontrib><creatorcontrib>Kim, Moon J.</creatorcontrib><creatorcontrib>Sivananthan, Sivalingam</creatorcontrib><creatorcontrib>Klie, Robert F.</creatorcontrib><creatorcontrib>Argonne National Lab. (ANL), Argonne, IL (United States)</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>OSTI.GOV</collection><jtitle>Acta crystallographica. Section A, Foundations and advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Paulauskas, Tadas</au><au>Buurma, Christopher</au><au>Colegrove, Eric</au><au>Stafford, Brian</au><au>Guo, Zhao</au><au>Chan, Maria K. Y.</au><au>Sun, Ce</au><au>Kim, Moon J.</au><au>Sivananthan, Sivalingam</au><au>Klie, Robert F.</au><aucorp>Argonne National Lab. (ANL), Argonne, IL (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic scale study of polar Lomer–Cottrell and Hirth lock dislocation cores in CdTe</atitle><jtitle>Acta crystallographica. Section A, Foundations and advances</jtitle><date>2014-11</date><risdate>2014</risdate><volume>70</volume><issue>6</issue><spage>524</spage><epage>531</epage><pages>524-531</pages><issn>2053-2733</issn><issn>0108-7673</issn><eissn>2053-2733</eissn><notes>ObjectType-Article-1</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-2</notes><notes>content type line 23</notes><notes>AC02-06CH11357</notes><notes>USDOE Office of Science - Office of Basic Energy Sciences - Scientific User Facilities Division</notes><notes>USDOE Office of Energy Efficiency and Renewable Energy (EERE) - Office of Solar Energy Technology (SETO) - SunShot Initiative</notes><abstract>Dislocation cores have long dominated the electronic and optical behaviors of semiconductor devices and detailed atomic characterization is required to further explore their effects. Miniaturization of semiconductor devices to nanometre scale also puts emphasis on a material's mechanical properties to withstand failure due to processing or operational stresses. Sessile junctions of dislocations provide barriers to propagation of mobile dislocations and may lead to work‐hardening. The sessile Lomer–Cottrell and Hirth lock dislocations, two stable lowest elastic energy stair‐rods, are studied in this paper. More specifically, using atomic resolution high‐angle annular dark‐field imaging and atomic‐column‐resolved X‐ray spectrum imaging in an aberration‐corrected scanning transmission electron microscope, dislocation core structures are examined in zinc‐blende CdTe. A procedure is outlined for atomic scale analysis of dislocation junctions which allows determination of their identity with specially tailored Burgers circuits and also formation mechanisms of the polar core structures based on Thompson's tetrahedron adapted to reactions of polar dislocations as they appear in CdTe and other zinc‐blende solids. Strain fields associated with the dislocations calculated via geometric phase analysis are found to be diffuse and free of `hot spots' that reflect compact structures and low elastic energy of the pure‐edge stair‐rods.</abstract><cop>5 Abbey Square, Chester, Cheshire CH1 2HU, England</cop><pub>International Union of Crystallography</pub><doi>10.1107/S2053273314019639</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2053-2733 |
| ispartof | Acta crystallographica. Section A, Foundations and advances, 2014-11, Vol.70 (6), p.524-531 |
| issn | 2053-2733 0108-7673 2053-2733 |
| language | eng |
| recordid | cdi_osti_scitechconnect_1391909 |
| source | Wiley; Alma/SFX Local Collection |
| subjects | Atomic structure Atoms & subatomic particles Cadmium tellurides CdTe Crystallography dislocation cores Dislocation mobility Dislocations Electronics HAADF Hirth lock dislocations Imaging Locks Lomer-Cottrell dislocations Scanning electron microscopy Semiconductor devices Semiconductors stair-rod dislocations STEM XEDS |
| title | Atomic scale study of polar Lomer–Cottrell and Hirth lock dislocation cores in CdTe |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T01%3A30%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Atomic%20scale%20study%20of%20polar%20Lomer%E2%80%93Cottrell%20and%20Hirth%20lock%20dislocation%20cores%20in%20CdTe&rft.jtitle=Acta%20crystallographica.%20Section%20A,%20Foundations%20and%20advances&rft.au=Paulauskas,%20Tadas&rft.aucorp=Argonne%20National%20Lab.%20(ANL),%20Argonne,%20IL%20(United%20States)&rft.date=2014-11&rft.volume=70&rft.issue=6&rft.spage=524&rft.epage=531&rft.pages=524-531&rft.issn=2053-2733&rft.eissn=2053-2733&rft_id=info:doi/10.1107/S2053273314019639&rft_dat=%3Cproquest_osti_%3E1753536346%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3831-934c1b116b5bb3f50515931e0bf86a6894a0d443c8a26863593ccc18431f77303%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1617957708&rft_id=info:pmid/&rfr_iscdi=true |