Formation of the electrically active centres in silicon irradiated with high energy ions and annealed at temperatures of 350-1050/spl deg/C

Three groups of electrically active centers were observed in silicon implanted with high energy ions and annealed in a wide temperature range. The first centers are thermal donors enhance formed in the temperature range of 380-500/spl deg/C. The second ones are shallow acceptors observed in the temp...

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Bibliographic Details
Main Authors: Antonova, I.V., Neustroev, E.P., Stas, V.F., Popov, V.P., Skuratov, V.A.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Crystals
Etching
Frequency
Gettering
Impurities
Ion implantation
Oxygen
Silicon
Temperature distribution
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Summary:Three groups of electrically active centers were observed in silicon implanted with high energy ions and annealed in a wide temperature range. The first centers are thermal donors enhance formed in the temperature range of 380-500/spl deg/C. The second ones are shallow acceptors observed in the temperature range of 500-570/spl deg/C. The last ones are most likely "new" thermal donors introduced in high concentration after annealing at 600-1050/spl deg/C. Depth distributions of the centers and-the reasons of their effective formation are discussed.
DOI:10.1109/IIT.2000.924104