OxRAM BER Scaling Trends on 4 kb Mixed-Diameter Test Vehicle

In this work we present a 4 kb OxRAM test structure which includes devices of diameter ranging from 30 nm to 170 nm. Thanks to a quasi-continuous range of cell sizes, this matrix allows to evaluate the impact of aggressive cell scaling over several performance metrics within the same test vehicle. H...

Full description

Saved in:
Bibliographic Details
Main Authors: Sandrini, J., Cagli, C., Grenouillet, L., Castellani, N., Meli, V., Gaillard, F.
Format: Conference Proceeding
Language:English
Subjects:
Bit error rate
Conferences
Costs
Distance measurement
Performance evaluation
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work we present a 4 kb OxRAM test structure which includes devices of diameter ranging from 30 nm to 170 nm. Thanks to a quasi-continuous range of cell sizes, this matrix allows to evaluate the impact of aggressive cell scaling over several performance metrics within the same test vehicle. Hereafter we study mainly the endurance results. We report how the High Resistive State increases by reducing the device size, and how this value drifts toward higher resistances differently according to the OxRAM area. Moreover, we discuss how smaller cells show a lower endurance, and how dual-bit cell configurations could compensate for these effects at the cost of doubling the dedicated area. We finally demonstrate that dual-bit cells allow a 10x reduction of the bit error rate compared to single cells of equivalent area.
ISSN:2158-1029
DOI:10.1109/ICMTS48187.2020.9107927