1.3 mu m InGaAs MSM photodetector with abrupt InGaAs/AlInAs interface

The authors have fabricated long-wavelength abrupt-junction InGaAs/AlInAs metal-semiconductor-metal photodetectors that are potentially compatible with AlInAs/InGaAs H-MESFETs. The detectors have nanoampere dark currents and low capacitance. The responsivity at 10 MHz is 0.32 A/W, corresponding to a...

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Published in:IEEE photonics technology letters 1991-06, Vol.3 (6), p.532-534
Main Authors: Burroughes, J.H., Hargis, M.
Format: Article
Language:English
Subjects:
Capacitance
Dark current
Fingers
Gallium arsenide
Indium gallium arsenide
Indium phosphide
Photodetectors
PIN photodiodes
Substrates
Wet etching
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description The authors have fabricated long-wavelength abrupt-junction InGaAs/AlInAs metal-semiconductor-metal photodetectors that are potentially compatible with AlInAs/InGaAs H-MESFETs. The detectors have nanoampere dark currents and low capacitance. The responsivity at 10 MHz is 0.32 A/W, corresponding to at least 90% internal collection efficiency. The device performance limitations due to charge storage at the InGaAs/AlInAs interface are discussed, and it is shown that despite charge pile up, high data rates (>3 GHz) have been achieved at low bias voltages, provided the incident intensity is low.< >
doi_str_mv 10.1109/68.91025
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source IEEE Electronic Library (IEL) Journals
subjects Capacitance
Dark current
Fingers
Gallium arsenide
Indium gallium arsenide
Indium phosphide
Photodetectors
PIN photodiodes
Substrates
Wet etching
title 1.3 mu m InGaAs MSM photodetector with abrupt InGaAs/AlInAs interface
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