Self-assembled InN growth on GaN nanorod

We report a self-assembled InN epitaxial growth on GaN nanorods. Crystalline InN hexagonal structure was selectively grown on the sidewall edges of GaN hexagonal nanorods. The growth mechanism and the photoluminescent property will be discussed.

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Bibliographic Details
Main Authors: Shih-Pang Chang, Yung-Yu Lai, Yuh-Jen Cheng, Jung Han, Hao-Chung Kuo, Chien-chung Lin, Chun-Yen Chang
Format: Conference Proceeding
Language:English
Subjects:
Educational institutions
Epitaxial growth
Gallium nitride
Self-assembly
Strain
Substrates
Online Access:Request full text
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Description
Summary:We report a self-assembled InN epitaxial growth on GaN nanorods. Crystalline InN hexagonal structure was selectively grown on the sidewall edges of GaN hexagonal nanorods. The growth mechanism and the photoluminescent property will be discussed.
ISSN:2160-8989
2160-9004