Nucleation, growth, and orientation analysis of quaternary-sputtered Cu(In, Ga)Se2

Cu(In, Ga)Se 2 films of various thicknesses were deposited from a single quaternary sputtering target and evaluated using x-ray diffraction and electron microscopy. Strong evidence of Volmer-Weber growth is observed, with the bare molybdenum bottom contact still observable after 600 seconds of growt...

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Bibliographic Details
Main Authors: Myers, Jason D., Frantz, Jesse A., Bekele, Robel Y., Qadri, Syed B., Sanghera, Jas S.
Format: Conference Proceeding
Language:English
Subjects:
Microscopy
Rough surfaces
scanning electron microscopy
semiconductor growth
Sputtering
Surface morphology
Surface roughness
thin films
X-ray diffraction
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Summary:Cu(In, Ga)Se 2 films of various thicknesses were deposited from a single quaternary sputtering target and evaluated using x-ray diffraction and electron microscopy. Strong evidence of Volmer-Weber growth is observed, with the bare molybdenum bottom contact still observable after 600 seconds of growth and a nominal film thickness of ~100 nm. X-ray diffraction characterization reveals that the degree of preferred orientation increases with additional growth time, indicating film reorganization and preferential adherence of deposited species. Further, the degree of preferred orientation decreases with the age of the sputtering target, making this a possible technique to monitor the remaining target lifetime.
ISSN:0160-8371
DOI:10.1109/PVSC.2013.6744177