Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper

A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4 ~ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A dilu...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2012-03, Vol.11 (2), p.255-260
Main Authors: Sun, Jie, Lindvall, Niclas, Cole, Matthew T., Angel, Koh T. T., Wang, Teng, Teo, Kenneth B. K., Chua, Daniel H. C., Liu, Johan, Yurgens, August
Format: Article
Language:English
Subjects:
Applied sciences
Carbon
CHEMICAL VAPOR DEPOSITION
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Copper
Cross-disciplinary physics: materials science
rheology
DEPOSITION
ELECTRICAL CONDUCTIVITY
Electrical resistivity
Electronics
Exact sciences and technology
Graphene
low partial pressure
Materials science
MECHANICAL PROPERTIES
Methods of deposition of films and coatings
film growth and epitaxy
MICA
Microelectronic fabrication (materials and surfaces technology)
Molecular electronics, nanoelectronics
nanoelectronics
Optical imaging
PARTIAL PRESSURE
Physics
PRESSURE
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Silicon substrates
Substrates
Surface treatment
VAPOR DEPOSITION
wet transfer
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Summary:A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4 ~ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2 /Si substrates or carbon grids. The graphene can be made suspended over a ~12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ~0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ~1800 cm 2 /Vs at 4.2 K and ~1200 cm 2 /Vs at room temperature.
ISSN:1536-125X
1941-0085
1941-0085
DOI:10.1109/TNANO.2011.2160729