In-situ control in zone-melting recrystallization process for formation of high-quality thin film polycrystalline Si

Newly developed zone-melting recrystallization (ZMR) apparatus for formation of thin film polycrystalline Si is introduced. In ZMR method, the fine temperature control is required for formation of high quality crystal over the large area with high uniformity. Therefore, monitoring of melting zone by...

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Bibliographic Details
Main Authors: Kawama, Y., Takami, A., Naomoto, H., Hamamoto, S., Ishihara, T.
Format: Conference Proceeding
Language:English
Subjects:
Charge coupled devices
Charge-coupled image sensors
Monitoring
Power generation
Process control
Semiconductor thin films
Substrates
Temperature control
Thin film devices
Transistors
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Summary:Newly developed zone-melting recrystallization (ZMR) apparatus for formation of thin film polycrystalline Si is introduced. In ZMR method, the fine temperature control is required for formation of high quality crystal over the large area with high uniformity. Therefore, monitoring of melting zone by means of CCD camera was employed. In this system, the width of melting zone was kept constant by controlling the output power of melting heater based on monitoring CCD-image. Reliability of this controlling system was confirmed by evaluating the quality of ZMR-Si by changing scanning speed and output power of melting heater which corresponds to the width of melting zone. As a result, {100} oriented thin film polycrystalline Si (0.3-3 /spl mu/m thick) with low dislocation density of 2-3/spl times/10/sup 6/ cm/sup -2/ was successfully obtained all over 6" /spl phi/ substrate.
ISSN:0160-8371
DOI:10.1109/PVSC.1996.564048