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Significant Effect of Emitter Area on the Efficiency, Stability and Reliability of Picosecond Switching in a GaAs Bipolar Transistor Structure
A drastic reduction in the residual voltage (from ~ 100 V to a few volts) and a significant (factor of ~ 2) increase in the dU / dt switching rate is demonstrated experimentally in the superfast ( ~ 200 ps) avalanche switching of a GaAs bipolar junction transistor with increased emitter area. This r...
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Published in: | IEEE transactions on electron devices 2010-04, Vol.57 (4), p.733-741 |
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container_title | IEEE transactions on electron devices |
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creator | Vainshtein, S.N. Yuferev, V.S. Kostamovaara, J.T. Kulagina, M.M. Moilanen, H.T. |
description | A drastic reduction in the residual voltage (from ~ 100 V to a few volts) and a significant (factor of ~ 2) increase in the dU / dt switching rate is demonstrated experimentally in the superfast ( ~ 200 ps) avalanche switching of a GaAs bipolar junction transistor with increased emitter area. This result is not a trivial one as only a small number of conductive channels of a few micrometers in diameter participate in the transient independently of the emitter size, while the remaining (passive) part of the structure supplies the switching channels with the currents circulating inside the chip, which makes the impact ionization in the filaments even more powerful. Excellent agreement was found between the experiment and a ¿two-transistor¿ model specially developed here, with one transistor simulating the switching channels and the other the nonswitched part of the structure. Much higher switching stability and reproducibility and much lower power dissipation were observed in the structure with increased emitter area. |
doi_str_mv | 10.1109/TED.2010.2041281 |
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fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_5415626</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5415626</ieee_id><sourcerecordid>2716555701</sourcerecordid><originalsourceid>FETCH-LOGICAL-c387t-c2fa76ca50892135f5748e8b42eba0cd403206dcbb8630e613c5f6882da755dd3</originalsourceid><addsrcrecordid>eNqFkc9rFDEcxQdRcK3eBS8BETw4bX5MMpnj2q5VKFjc9TxkMt-03zKbrEmGsv-Ef7NZdu3Bi6fweJ_3SPKq6i2j54zR7mKzujrntChOG8Y1e1YtmJRt3alGPa8WlDJdd0KLl9WrlB6KVE3DF9XvNd55dGiNz2TlHNhMgiOrLeYMkSwjGBI8yfdwcNEieLv_RNbZDDhh3hPjR_IDJvyrS_gWbUhgQ3HWj5jtPfo7gp4Ycm2WiXzGXZhMJJtofMKUQyx1cbZ5jvC6euHMlODN6Tyrfn5ZbS6_1jffr79dLm9qK3Sba8udaZU1kuqOMyGdbBsNemg4DIbasaGCUzXaYdBKUFBMWOmU1nw0rZTjKM6qj8feXQy_Zki532KyME3GQ5hTz1TLeMc6Jf-PCiaVVkyLgr7_B30Ic_TlIT2jvGVSNFQVih4pG0NKEVy_i7g1cV-g_rBlX7bsD1v2py1L5MOp2CRrJld-zmJ6ynHe8k4pXbh3Rw4B4MmWTbkhV-IPqWKnDg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1027153406</pqid></control><display><type>article</type><title>Significant Effect of Emitter Area on the Efficiency, Stability and Reliability of Picosecond Switching in a GaAs Bipolar Transistor Structure</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Vainshtein, S.N. ; Yuferev, V.S. ; Kostamovaara, J.T. ; Kulagina, M.M. ; Moilanen, H.T.</creator><creatorcontrib>Vainshtein, S.N. ; Yuferev, V.S. ; Kostamovaara, J.T. ; Kulagina, M.M. ; Moilanen, H.T.</creatorcontrib><description>A drastic reduction in the residual voltage (from ~ 100 V to a few volts) and a significant (factor of ~ 2) increase in the dU / dt switching rate is demonstrated experimentally in the superfast ( ~ 200 ps) avalanche switching of a GaAs bipolar junction transistor with increased emitter area. This result is not a trivial one as only a small number of conductive channels of a few micrometers in diameter participate in the transient independently of the emitter size, while the remaining (passive) part of the structure supplies the switching channels with the currents circulating inside the chip, which makes the impact ionization in the filaments even more powerful. Excellent agreement was found between the experiment and a ¿two-transistor¿ model specially developed here, with one transistor simulating the switching channels and the other the nonswitched part of the structure. Much higher switching stability and reproducibility and much lower power dissipation were observed in the structure with increased emitter area.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2010.2041281</identifier><identifier>CODEN: IETDAI</identifier><language>eng ; rus</language><publisher>New York, NY: IEEE</publisher><subject>Bipolar transistor switches ; Channels ; Emittance ; Gallium arsenide ; Gallium arsenides ; Gunn domains ; high-power switch ; impact ionization ; Ionization ; microwave switch ; semiconductor device modeling ; Semiconductor devices ; Stability ; Switches ; Switching ; Switching circuits ; Transient analysis ; Transistors ; Voltage measurement</subject><ispartof>IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.733-741</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c387t-c2fa76ca50892135f5748e8b42eba0cd403206dcbb8630e613c5f6882da755dd3</citedby><cites>FETCH-LOGICAL-c387t-c2fa76ca50892135f5748e8b42eba0cd403206dcbb8630e613c5f6882da755dd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5415626$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,786,790,27957,27958,55147</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22729668$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Vainshtein, S.N.</creatorcontrib><creatorcontrib>Yuferev, V.S.</creatorcontrib><creatorcontrib>Kostamovaara, J.T.</creatorcontrib><creatorcontrib>Kulagina, M.M.</creatorcontrib><creatorcontrib>Moilanen, H.T.</creatorcontrib><title>Significant Effect of Emitter Area on the Efficiency, Stability and Reliability of Picosecond Switching in a GaAs Bipolar Transistor Structure</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A drastic reduction in the residual voltage (from ~ 100 V to a few volts) and a significant (factor of ~ 2) increase in the dU / dt switching rate is demonstrated experimentally in the superfast ( ~ 200 ps) avalanche switching of a GaAs bipolar junction transistor with increased emitter area. This result is not a trivial one as only a small number of conductive channels of a few micrometers in diameter participate in the transient independently of the emitter size, while the remaining (passive) part of the structure supplies the switching channels with the currents circulating inside the chip, which makes the impact ionization in the filaments even more powerful. Excellent agreement was found between the experiment and a ¿two-transistor¿ model specially developed here, with one transistor simulating the switching channels and the other the nonswitched part of the structure. Much higher switching stability and reproducibility and much lower power dissipation were observed in the structure with increased emitter area.</description><subject>Bipolar transistor switches</subject><subject>Channels</subject><subject>Emittance</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Gunn domains</subject><subject>high-power switch</subject><subject>impact ionization</subject><subject>Ionization</subject><subject>microwave switch</subject><subject>semiconductor device modeling</subject><subject>Semiconductor devices</subject><subject>Stability</subject><subject>Switches</subject><subject>Switching</subject><subject>Switching circuits</subject><subject>Transient analysis</subject><subject>Transistors</subject><subject>Voltage measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkc9rFDEcxQdRcK3eBS8BETw4bX5MMpnj2q5VKFjc9TxkMt-03zKbrEmGsv-Ef7NZdu3Bi6fweJ_3SPKq6i2j54zR7mKzujrntChOG8Y1e1YtmJRt3alGPa8WlDJdd0KLl9WrlB6KVE3DF9XvNd55dGiNz2TlHNhMgiOrLeYMkSwjGBI8yfdwcNEieLv_RNbZDDhh3hPjR_IDJvyrS_gWbUhgQ3HWj5jtPfo7gp4Ycm2WiXzGXZhMJJtofMKUQyx1cbZ5jvC6euHMlODN6Tyrfn5ZbS6_1jffr79dLm9qK3Sba8udaZU1kuqOMyGdbBsNemg4DIbasaGCUzXaYdBKUFBMWOmU1nw0rZTjKM6qj8feXQy_Zki532KyME3GQ5hTz1TLeMc6Jf-PCiaVVkyLgr7_B30Ic_TlIT2jvGVSNFQVih4pG0NKEVy_i7g1cV-g_rBlX7bsD1v2py1L5MOp2CRrJld-zmJ6ynHe8k4pXbh3Rw4B4MmWTbkhV-IPqWKnDg</recordid><startdate>20100401</startdate><enddate>20100401</enddate><creator>Vainshtein, S.N.</creator><creator>Yuferev, V.S.</creator><creator>Kostamovaara, J.T.</creator><creator>Kulagina, M.M.</creator><creator>Moilanen, H.T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20100401</creationdate><title>Significant Effect of Emitter Area on the Efficiency, Stability and Reliability of Picosecond Switching in a GaAs Bipolar Transistor Structure</title><author>Vainshtein, S.N. ; Yuferev, V.S. ; Kostamovaara, J.T. ; Kulagina, M.M. ; Moilanen, H.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c387t-c2fa76ca50892135f5748e8b42eba0cd403206dcbb8630e613c5f6882da755dd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; rus</language><creationdate>2010</creationdate><topic>Bipolar transistor switches</topic><topic>Channels</topic><topic>Emittance</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Gunn domains</topic><topic>high-power switch</topic><topic>impact ionization</topic><topic>Ionization</topic><topic>microwave switch</topic><topic>semiconductor device modeling</topic><topic>Semiconductor devices</topic><topic>Stability</topic><topic>Switches</topic><topic>Switching</topic><topic>Switching circuits</topic><topic>Transient analysis</topic><topic>Transistors</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vainshtein, S.N.</creatorcontrib><creatorcontrib>Yuferev, V.S.</creatorcontrib><creatorcontrib>Kostamovaara, J.T.</creatorcontrib><creatorcontrib>Kulagina, M.M.</creatorcontrib><creatorcontrib>Moilanen, H.T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vainshtein, S.N.</au><au>Yuferev, V.S.</au><au>Kostamovaara, J.T.</au><au>Kulagina, M.M.</au><au>Moilanen, H.T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Significant Effect of Emitter Area on the Efficiency, Stability and Reliability of Picosecond Switching in a GaAs Bipolar Transistor Structure</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2010-04-01</date><risdate>2010</risdate><volume>57</volume><issue>4</issue><spage>733</spage><epage>741</epage><pages>733-741</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><notes>ObjectType-Article-2</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-1</notes><notes>content type line 23</notes><notes>ObjectType-Article-1</notes><notes>ObjectType-Feature-2</notes><abstract>A drastic reduction in the residual voltage (from ~ 100 V to a few volts) and a significant (factor of ~ 2) increase in the dU / dt switching rate is demonstrated experimentally in the superfast ( ~ 200 ps) avalanche switching of a GaAs bipolar junction transistor with increased emitter area. This result is not a trivial one as only a small number of conductive channels of a few micrometers in diameter participate in the transient independently of the emitter size, while the remaining (passive) part of the structure supplies the switching channels with the currents circulating inside the chip, which makes the impact ionization in the filaments even more powerful. Excellent agreement was found between the experiment and a ¿two-transistor¿ model specially developed here, with one transistor simulating the switching channels and the other the nonswitched part of the structure. Much higher switching stability and reproducibility and much lower power dissipation were observed in the structure with increased emitter area.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2010.2041281</doi><tpages>9</tpages></addata></record> |
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subjects | Bipolar transistor switches Channels Emittance Gallium arsenide Gallium arsenides Gunn domains high-power switch impact ionization Ionization microwave switch semiconductor device modeling Semiconductor devices Stability Switches Switching Switching circuits Transient analysis Transistors Voltage measurement |
title | Significant Effect of Emitter Area on the Efficiency, Stability and Reliability of Picosecond Switching in a GaAs Bipolar Transistor Structure |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-21T11%3A01%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Significant%20Effect%20of%20Emitter%20Area%20on%20the%20Efficiency,%20Stability%20and%20Reliability%20of%20Picosecond%20Switching%20in%20a%20GaAs%20Bipolar%20Transistor%20Structure&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Vainshtein,%20S.N.&rft.date=2010-04-01&rft.volume=57&rft.issue=4&rft.spage=733&rft.epage=741&rft.pages=733-741&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2010.2041281&rft_dat=%3Cproquest_ieee_%3E2716555701%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c387t-c2fa76ca50892135f5748e8b42eba0cd403206dcbb8630e613c5f6882da755dd3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1027153406&rft_id=info:pmid/&rft_ieee_id=5415626&rfr_iscdi=true |