Synthesis and Characterization of Pb(Zr0.53, Ti0.47)O3-Pb(Nb1/3, Zn2/3)O3 Thin Film Cantilevers for Energy Harvesting Applications

A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53,Ti0.47)O3− Pb(Nb1/3, Zn2/3)O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN f...

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Published in:Smart materials research 2012, Vol.2012 (2012), p.1-9
Main Authors: Fuentes-Fernandez, E. M. A., Debray-Mechtaly, W., Quevedo-López, M. A., Gnade, B., Leon-Salguero, E., Shah, P., Alshareef, H. N.
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container_issue 2012
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container_title Smart materials research
container_volume 2012
creator Fuentes-Fernandez, E. M. A.
Debray-Mechtaly, W.
Quevedo-López, M. A.
Gnade, B.
Leon-Salguero, E.
Shah, P.
Alshareef, H. N.
description A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53,Ti0.47)O3− Pb(Nb1/3, Zn2/3)O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO2/PECVD SiO2/Si3N4/thermal SiO2/Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 μC/cm2 were obtained. The fabricated cantilever devices produced ∼300–400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.
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