Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V − 1...

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Bibliographic Details
Published in:Thin solid films 2006-04, Vol.501 (1), p.303-306
Main Authors: Fonrodona, M., Soler, D., Escarré, J., Villar, F., Bertomeu, J., Andreu, J., Saboundji, A., Coulon, N., Mohammed-Brahim, T.
Format: Article
Language:English
Subjects:
Amorphous and nanocrystalline silicon
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Deposició química en fase vapor
Exact sciences and technology
Hot-Wire CVD
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Nanocristalls
Nanocrystalline materials
Nanocrystals
Nanoscale materials and structures: fabrication and characterization
Pel·lícules fines
Physics
Silici
Silicon
Thin film transistor
Thin films
Transistors
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Summary:Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V − 1 s − 1 , which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V − 1 s − 1 and resulted in low threshold voltage shift (∼ 0.5 V).
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.07.217