Experiments on MEMS Integration in 0.25 turn CMOS Process

In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts...

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Bibliographic Details
Main Authors:	Michalik, Piotr Jozef, Fernández, Daniel, Wietstruck, Mehmet, Kaynak, Mehmet, Madrenas Boadas, Jordi
Format:	Article
Language:	eng
Subjects:	Accelerometer BEOL (Back End of Line) Circuits integrats CMOS CMOS-MEMS Enginyeria electrònica Integrated circuits MEMS Microelectrònica Àrees temàtiques de la UPC
Online Access:	Get full text
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Summary:	In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 µg and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress. Peer Reviewed
ISSN:	1424-8220 1424-8220