Loading…
Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal
Saved in:
Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2000-05, Vol.34 (5), p.550-554 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c293t-699fe2258d7960b5e655581f937345876ecd168fd0369e5eb355f6e088cf98c43 |
---|---|
cites | |
container_end_page | 554 |
container_issue | 5 |
container_start_page | 550 |
container_title | Semiconductors (Woodbury, N.Y.) |
container_volume | 34 |
creator | Usanov, D. A. Skripal’, A. V. Ugryumova, N. V. Venig, S. B. Orlov, V. E. |
description | |
doi_str_mv | 10.1134/1.1188026 |
format | article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1134_1_1188026</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_1_1188026</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-699fe2258d7960b5e655581f937345876ecd168fd0369e5eb355f6e088cf98c43</originalsourceid><addsrcrecordid>eNotkE9PAyEUxInRxFo9-A3e1cMqLAsLR7PxX9LEi543FB4tpmUNUKs3P7o09jQvLzO_SYaQa0ZvGePdHauiFG3lCZkxqmkju16fHm7Jm1618pxc5PxBabWJbkZ-hym6UMIUM_gpQcSVKeELwQXvMWEswWwgYQ65mGgRTHSQ96HYdYgrCBEMlF2MuKmJySHsosMEZY2AFWALTL5mAL8LplhR22DTtDe1IYdVfVySM282Ga-OOifvjw9vw3OzeH16Ge4XjW01L43U2mPbCuV6LelSoBRCKOY173knVC_ROiaVd5RLjQKXXAgvkSplvVa243Ny88-t9Tkn9ONnCluTfkZGx8N0IxuP0_E_kqZifA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal</title><source>Springer Nature:Jisc Collections:Springer Nature Read and Publish 2023-2025: Springer Reading List</source><creator>Usanov, D. A. ; Skripal’, A. V. ; Ugryumova, N. V. ; Venig, S. B. ; Orlov, V. E.</creator><creatorcontrib>Usanov, D. A. ; Skripal’, A. V. ; Ugryumova, N. V. ; Venig, S. B. ; Orlov, V. E.</creatorcontrib><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/1.1188026</identifier><language>eng</language><ispartof>Semiconductors (Woodbury, N.Y.), 2000-05, Vol.34 (5), p.550-554</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-699fe2258d7960b5e655581f937345876ecd168fd0369e5eb355f6e088cf98c43</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Usanov, D. A.</creatorcontrib><creatorcontrib>Skripal’, A. V.</creatorcontrib><creatorcontrib>Ugryumova, N. V.</creatorcontrib><creatorcontrib>Venig, S. B.</creatorcontrib><creatorcontrib>Orlov, V. E.</creatorcontrib><title>Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal</title><title>Semiconductors (Woodbury, N.Y.)</title><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkE9PAyEUxInRxFo9-A3e1cMqLAsLR7PxX9LEi543FB4tpmUNUKs3P7o09jQvLzO_SYaQa0ZvGePdHauiFG3lCZkxqmkju16fHm7Jm1618pxc5PxBabWJbkZ-hym6UMIUM_gpQcSVKeELwQXvMWEswWwgYQ65mGgRTHSQ96HYdYgrCBEMlF2MuKmJySHsosMEZY2AFWALTL5mAL8LplhR22DTtDe1IYdVfVySM282Ga-OOifvjw9vw3OzeH16Ge4XjW01L43U2mPbCuV6LelSoBRCKOY173knVC_ROiaVd5RLjQKXXAgvkSplvVa243Ny88-t9Tkn9ONnCluTfkZGx8N0IxuP0_E_kqZifA</recordid><startdate>200005</startdate><enddate>200005</enddate><creator>Usanov, D. A.</creator><creator>Skripal’, A. V.</creator><creator>Ugryumova, N. V.</creator><creator>Venig, S. B.</creator><creator>Orlov, V. E.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200005</creationdate><title>Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal</title><author>Usanov, D. A. ; Skripal’, A. V. ; Ugryumova, N. V. ; Venig, S. B. ; Orlov, V. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-699fe2258d7960b5e655581f937345876ecd168fd0369e5eb355f6e088cf98c43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Usanov, D. A.</creatorcontrib><creatorcontrib>Skripal’, A. V.</creatorcontrib><creatorcontrib>Ugryumova, N. V.</creatorcontrib><creatorcontrib>Venig, S. B.</creatorcontrib><creatorcontrib>Orlov, V. E.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Usanov, D. A.</au><au>Skripal’, A. V.</au><au>Ugryumova, N. V.</au><au>Venig, S. B.</au><au>Orlov, V. E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2000-05</date><risdate>2000</risdate><volume>34</volume><issue>5</issue><spage>550</spage><epage>554</epage><pages>550-554</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><doi>10.1134/1.1188026</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1063-7826 |
ispartof | Semiconductors (Woodbury, N.Y.), 2000-05, Vol.34 (5), p.550-554 |
issn | 1063-7826 1090-6479 |
language | eng |
recordid | cdi_crossref_primary_10_1134_1_1188026 |
source | Springer Nature:Jisc Collections:Springer Nature Read and Publish 2023-2025: Springer Reading List |
title | Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T17%3A23%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Conditions%20for%20negative%20differential%20resistance%20and%20switching%20in%20a%20tunnel%20diode%20under%20the%20effect%20of%20an%20external%20microwave%20signal&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Usanov,%20D.%20A.&rft.date=2000-05&rft.volume=34&rft.issue=5&rft.spage=550&rft.epage=554&rft.pages=550-554&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/1.1188026&rft_dat=%3Ccrossref%3E10_1134_1_1188026%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c293t-699fe2258d7960b5e655581f937345876ecd168fd0369e5eb355f6e088cf98c43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |