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Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures
Ti/Al/Ni/Au Ohmic contact metallization on InAlN/GaN heterostructures both with and without a thin GaN cap layer was annealed at different temperatures. The minimum transfer resistance for the contacts of 0.65 Ω mm (specific contact resistivity of 2 × 10 − 5 Ω cm 2 ) was achieved after 800...
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| Published in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-03, Vol.29 (2) |
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| cites | cdi_FETCH-LOGICAL-c365t-679f7761c3d6590cba63a2879c1a91a3d575f1d3aa0314aa07645ab91da8425b3 |
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| container_issue | 2 |
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| container_title | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena |
| container_volume | 29 |
| creator | Lo, C.-F. Liu, L. Chang, C. Y. Ren, F. Craciun, V. Pearton, S. J. Heo, Y. W. Laboutin, O. Johnson, J. W. |
| description | Ti/Al/Ni/Au Ohmic contact metallization on InAlN/GaN heterostructures both with and without a thin GaN cap layer was annealed at different temperatures. The minimum transfer resistance for the contacts of
0.65
Ω
mm
(specific contact resistivity of
2
×
10
−
5
Ω
cm
2
) was achieved after
800
°
C
annealing for structures without the GaN cap, while those with the cap exhibited their lowest resistance at higher temperatures. The contact morphology showed considerable roughening by
750
°
C
but the carrier mobility was stable until annealing temperatures of
850
°
C
. Diffuse scattering experiments showed that the morphological roughness of the InAlN/GaN interface increased as a result of annealing at these temperatures and the data were consistent with outdiffusion of Ga into the InAlN. Unpassivated high electron mobility transistors with a gate dimension of
0.7
×
180
μ
m
2
were fabricated using these contacts and showed a maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm. The presence of the GaN cap increased the effective barrier height of Ni/Au Schottky contacts from 0.91 to 1.01 eV on the heterostructure. |
| doi_str_mv | 10.1116/1.3545811 |
| format | article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1116_1_3545811</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_3545811</sourcerecordid><originalsourceid>FETCH-LOGICAL-c365t-679f7761c3d6590cba63a2879c1a91a3d575f1d3aa0314aa07645ab91da8425b3</originalsourceid><addsrcrecordid>eNp9kMFKw0AQhoMoWKsH32CvCml3stlNcyxFa0Hai57DZLNpVpLdsLsV-gC-twktehC8zAz_fPMP_FF0D3QGAGIOM8ZTvgC4iCbAExovuMguh5lmEANN2HV04_0HpVRwxibR19IYha02exJU1yuH4eAUqVSvTKWMVMTWZNd0WhJpTUAZiFNe-4DjDk1FOuv6xrZ2fyTWkI1Zttv5Grek0fuGqFbJ4Aa9s6VudTiS4NCM99YRH9xBju_8bXRVY-vV3blPo_fnp7fVS_y6W29Wy9dYMsFDLLK8zjIBklWC51SWKBgmiyyXgDkgq3jGa6gYImWQDjUTKccyhwoXacJLNo0eTr7SWe-dqove6Q7dsQBajPkVUJzzG9jHE-ulDhi0NT_wp3W_YNFX9X_wX-dvwzqBUg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Lo, C.-F. ; Liu, L. ; Chang, C. Y. ; Ren, F. ; Craciun, V. ; Pearton, S. J. ; Heo, Y. W. ; Laboutin, O. ; Johnson, J. W.</creator><creatorcontrib>Lo, C.-F. ; Liu, L. ; Chang, C. Y. ; Ren, F. ; Craciun, V. ; Pearton, S. J. ; Heo, Y. W. ; Laboutin, O. ; Johnson, J. W.</creatorcontrib><description>Ti/Al/Ni/Au Ohmic contact metallization on InAlN/GaN heterostructures both with and without a thin GaN cap layer was annealed at different temperatures. The minimum transfer resistance for the contacts of
0.65
Ω
mm
(specific contact resistivity of
2
×
10
−
5
Ω
cm
2
) was achieved after
800
°
C
annealing for structures without the GaN cap, while those with the cap exhibited their lowest resistance at higher temperatures. The contact morphology showed considerable roughening by
750
°
C
but the carrier mobility was stable until annealing temperatures of
850
°
C
. Diffuse scattering experiments showed that the morphological roughness of the InAlN/GaN interface increased as a result of annealing at these temperatures and the data were consistent with outdiffusion of Ga into the InAlN. Unpassivated high electron mobility transistors with a gate dimension of
0.7
×
180
μ
m
2
were fabricated using these contacts and showed a maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm. The presence of the GaN cap increased the effective barrier height of Ni/Au Schottky contacts from 0.91 to 1.01 eV on the heterostructure.</description><identifier>ISSN: 1071-1023</identifier><identifier>ISSN: 2166-2746</identifier><identifier>EISSN: 1520-8567</identifier><identifier>EISSN: 2166-2754</identifier><identifier>DOI: 10.1116/1.3545811</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2011-03, Vol.29 (2)</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c365t-679f7761c3d6590cba63a2879c1a91a3d575f1d3aa0314aa07645ab91da8425b3</citedby><cites>FETCH-LOGICAL-c365t-679f7761c3d6590cba63a2879c1a91a3d575f1d3aa0314aa07645ab91da8425b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Lo, C.-F.</creatorcontrib><creatorcontrib>Liu, L.</creatorcontrib><creatorcontrib>Chang, C. Y.</creatorcontrib><creatorcontrib>Ren, F.</creatorcontrib><creatorcontrib>Craciun, V.</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><creatorcontrib>Heo, Y. W.</creatorcontrib><creatorcontrib>Laboutin, O.</creatorcontrib><creatorcontrib>Johnson, J. W.</creatorcontrib><title>Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures</title><title>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</title><description>Ti/Al/Ni/Au Ohmic contact metallization on InAlN/GaN heterostructures both with and without a thin GaN cap layer was annealed at different temperatures. The minimum transfer resistance for the contacts of
0.65
Ω
mm
(specific contact resistivity of
2
×
10
−
5
Ω
cm
2
) was achieved after
800
°
C
annealing for structures without the GaN cap, while those with the cap exhibited their lowest resistance at higher temperatures. The contact morphology showed considerable roughening by
750
°
C
but the carrier mobility was stable until annealing temperatures of
850
°
C
. Diffuse scattering experiments showed that the morphological roughness of the InAlN/GaN interface increased as a result of annealing at these temperatures and the data were consistent with outdiffusion of Ga into the InAlN. Unpassivated high electron mobility transistors with a gate dimension of
0.7
×
180
μ
m
2
were fabricated using these contacts and showed a maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm. The presence of the GaN cap increased the effective barrier height of Ni/Au Schottky contacts from 0.91 to 1.01 eV on the heterostructure.</description><issn>1071-1023</issn><issn>2166-2746</issn><issn>1520-8567</issn><issn>2166-2754</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKw0AQhoMoWKsH32CvCml3stlNcyxFa0Hai57DZLNpVpLdsLsV-gC-twktehC8zAz_fPMP_FF0D3QGAGIOM8ZTvgC4iCbAExovuMguh5lmEANN2HV04_0HpVRwxibR19IYha02exJU1yuH4eAUqVSvTKWMVMTWZNd0WhJpTUAZiFNe-4DjDk1FOuv6xrZ2fyTWkI1Zttv5Grek0fuGqFbJ4Aa9s6VudTiS4NCM99YRH9xBju_8bXRVY-vV3blPo_fnp7fVS_y6W29Wy9dYMsFDLLK8zjIBklWC51SWKBgmiyyXgDkgq3jGa6gYImWQDjUTKccyhwoXacJLNo0eTr7SWe-dqove6Q7dsQBajPkVUJzzG9jHE-ulDhi0NT_wp3W_YNFX9X_wX-dvwzqBUg</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>Lo, C.-F.</creator><creator>Liu, L.</creator><creator>Chang, C. Y.</creator><creator>Ren, F.</creator><creator>Craciun, V.</creator><creator>Pearton, S. J.</creator><creator>Heo, Y. W.</creator><creator>Laboutin, O.</creator><creator>Johnson, J. W.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110301</creationdate><title>Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures</title><author>Lo, C.-F. ; Liu, L. ; Chang, C. Y. ; Ren, F. ; Craciun, V. ; Pearton, S. J. ; Heo, Y. W. ; Laboutin, O. ; Johnson, J. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-679f7761c3d6590cba63a2879c1a91a3d575f1d3aa0314aa07645ab91da8425b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lo, C.-F.</creatorcontrib><creatorcontrib>Liu, L.</creatorcontrib><creatorcontrib>Chang, C. Y.</creatorcontrib><creatorcontrib>Ren, F.</creatorcontrib><creatorcontrib>Craciun, V.</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><creatorcontrib>Heo, Y. W.</creatorcontrib><creatorcontrib>Laboutin, O.</creatorcontrib><creatorcontrib>Johnson, J. W.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lo, C.-F.</au><au>Liu, L.</au><au>Chang, C. Y.</au><au>Ren, F.</au><au>Craciun, V.</au><au>Pearton, S. J.</au><au>Heo, Y. W.</au><au>Laboutin, O.</au><au>Johnson, J. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures</atitle><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle><date>2011-03-01</date><risdate>2011</risdate><volume>29</volume><issue>2</issue><issn>1071-1023</issn><issn>2166-2746</issn><eissn>1520-8567</eissn><eissn>2166-2754</eissn><coden>JVTBD9</coden><abstract>Ti/Al/Ni/Au Ohmic contact metallization on InAlN/GaN heterostructures both with and without a thin GaN cap layer was annealed at different temperatures. The minimum transfer resistance for the contacts of
0.65
Ω
mm
(specific contact resistivity of
2
×
10
−
5
Ω
cm
2
) was achieved after
800
°
C
annealing for structures without the GaN cap, while those with the cap exhibited their lowest resistance at higher temperatures. The contact morphology showed considerable roughening by
750
°
C
but the carrier mobility was stable until annealing temperatures of
850
°
C
. Diffuse scattering experiments showed that the morphological roughness of the InAlN/GaN interface increased as a result of annealing at these temperatures and the data were consistent with outdiffusion of Ga into the InAlN. Unpassivated high electron mobility transistors with a gate dimension of
0.7
×
180
μ
m
2
were fabricated using these contacts and showed a maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm. The presence of the GaN cap increased the effective barrier height of Ni/Au Schottky contacts from 0.91 to 1.01 eV on the heterostructure.</abstract><doi>10.1116/1.3545811</doi><tpages>5</tpages></addata></record> |
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| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| title | Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures |
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