Loading…

Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors

In this brief, a negative bias stress (NBS) induced degradation in n-type multigate polycrystalline silicon (poly-Si) thin-film transistor (TFT) is investigated. It is observed that after NBS the transfer characteristic curves shift to the negative gate bias direction and multigate TFTs degrade more...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2017-10, Vol.64 (10), p.4363-4367
Main Authors: Zhang, Dongli, Wang, Mingxiang, Wang, Huaisheng, Yang, Yilin
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c291t-22a92be2e0e82d1100bc9fe732bffe9b3db9bbb7f0da26ba7dd683c7ab7006d53
cites cdi_FETCH-LOGICAL-c291t-22a92be2e0e82d1100bc9fe732bffe9b3db9bbb7f0da26ba7dd683c7ab7006d53
container_end_page 4367
container_issue 10
container_start_page 4363
container_title IEEE transactions on electron devices
container_volume 64
creator Zhang, Dongli
Wang, Mingxiang
Wang, Huaisheng
Yang, Yilin
description In this brief, a negative bias stress (NBS) induced degradation in n-type multigate polycrystalline silicon (poly-Si) thin-film transistor (TFT) is investigated. It is observed that after NBS the transfer characteristic curves shift to the negative gate bias direction and multigate TFTs degrade more than the single-gate TFTs with the same effective channel length. The observed degradation phenomenon is explained with short channel effect that is resulted from the diffusion and distribution of hole carriers in the channel, which are generated in the source/drain depletion region and swept into the channel when the junctions are reversely biased during NBS. Pronounced NBS degradation caused by increased hole carriers in the channel is also verified in NBS experiment with light illumination.
doi_str_mv 10.1109/TED.2017.2737489
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TED_2017_2737489</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8012560</ieee_id><sourcerecordid>1939943698</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-22a92be2e0e82d1100bc9fe732bffe9b3db9bbb7f0da26ba7dd683c7ab7006d53</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKt3wUvA89Z8bDebo9ZWhfoBXc8h2cy2KdtsTbZC_70pLZ6GGZ53hnkQuqVkRCmRD9X0ecQIFSMmuMhLeYYGdDwWmSzy4hwNCKFlJnnJL9FVjOvUFnnOBshO_Ur7Giz-gKXu3S_gJ6cjXvQBYsTPsAzapnnnsfP4fdf2LmGAv7p2X4d97HXbOg944VpXJ6haOZ_NXLvBVdA-uth3IV6ji0a3EW5OdYi-Z9Nq8prNP1_eJo_zrGaS9hljWjIDDAiUzKaviKllA4Iz0zQgDbdGGmNEQ6xmhdHC2qLktdBGEFLYMR-i--Pebeh-dhB7te52waeTikouZc4LWSaKHKk6dDEGaNQ2uI0Oe0WJOrhUyaU6uFQnlylyd4w4APjHS0LZuCD8D196ceA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1939943698</pqid></control><display><type>article</type><title>Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Zhang, Dongli ; Wang, Mingxiang ; Wang, Huaisheng ; Yang, Yilin</creator><creatorcontrib>Zhang, Dongli ; Wang, Mingxiang ; Wang, Huaisheng ; Yang, Yilin</creatorcontrib><description>In this brief, a negative bias stress (NBS) induced degradation in n-type multigate polycrystalline silicon (poly-Si) thin-film transistor (TFT) is investigated. It is observed that after NBS the transfer characteristic curves shift to the negative gate bias direction and multigate TFTs degrade more than the single-gate TFTs with the same effective channel length. The observed degradation phenomenon is explained with short channel effect that is resulted from the diffusion and distribution of hole carriers in the channel, which are generated in the source/drain depletion region and swept into the channel when the junctions are reversely biased during NBS. Pronounced NBS degradation caused by increased hole carriers in the channel is also verified in NBS experiment with light illumination.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2017.2737489</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bias ; Charge carrier processes ; Degradation ; Light ; Logic gates ; Multigate ; negative bias stress (NBS) ; NIST ; poly-Si ; Semiconductor devices ; Silicon films ; Silicon wafers ; Stress ; Thin film transistors ; thin-film transistor (TFT) ; Threshold voltage ; threshold voltage shift</subject><ispartof>IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4363-4367</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-22a92be2e0e82d1100bc9fe732bffe9b3db9bbb7f0da26ba7dd683c7ab7006d53</citedby><cites>FETCH-LOGICAL-c291t-22a92be2e0e82d1100bc9fe732bffe9b3db9bbb7f0da26ba7dd683c7ab7006d53</cites><orcidid>0000-0002-0556-5532 ; 0000-0001-7413-2311</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8012560$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,783,787,27936,27937,55124</link.rule.ids></links><search><creatorcontrib>Zhang, Dongli</creatorcontrib><creatorcontrib>Wang, Mingxiang</creatorcontrib><creatorcontrib>Wang, Huaisheng</creatorcontrib><creatorcontrib>Yang, Yilin</creatorcontrib><title>Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this brief, a negative bias stress (NBS) induced degradation in n-type multigate polycrystalline silicon (poly-Si) thin-film transistor (TFT) is investigated. It is observed that after NBS the transfer characteristic curves shift to the negative gate bias direction and multigate TFTs degrade more than the single-gate TFTs with the same effective channel length. The observed degradation phenomenon is explained with short channel effect that is resulted from the diffusion and distribution of hole carriers in the channel, which are generated in the source/drain depletion region and swept into the channel when the junctions are reversely biased during NBS. Pronounced NBS degradation caused by increased hole carriers in the channel is also verified in NBS experiment with light illumination.</description><subject>Bias</subject><subject>Charge carrier processes</subject><subject>Degradation</subject><subject>Light</subject><subject>Logic gates</subject><subject>Multigate</subject><subject>negative bias stress (NBS)</subject><subject>NIST</subject><subject>poly-Si</subject><subject>Semiconductor devices</subject><subject>Silicon films</subject><subject>Silicon wafers</subject><subject>Stress</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><subject>Threshold voltage</subject><subject>threshold voltage shift</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWKt3wUvA89Z8bDebo9ZWhfoBXc8h2cy2KdtsTbZC_70pLZ6GGZ53hnkQuqVkRCmRD9X0ecQIFSMmuMhLeYYGdDwWmSzy4hwNCKFlJnnJL9FVjOvUFnnOBshO_Ur7Giz-gKXu3S_gJ6cjXvQBYsTPsAzapnnnsfP4fdf2LmGAv7p2X4d97HXbOg944VpXJ6haOZ_NXLvBVdA-uth3IV6ji0a3EW5OdYi-Z9Nq8prNP1_eJo_zrGaS9hljWjIDDAiUzKaviKllA4Iz0zQgDbdGGmNEQ6xmhdHC2qLktdBGEFLYMR-i--Pebeh-dhB7te52waeTikouZc4LWSaKHKk6dDEGaNQ2uI0Oe0WJOrhUyaU6uFQnlylyd4w4APjHS0LZuCD8D196ceA</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Zhang, Dongli</creator><creator>Wang, Mingxiang</creator><creator>Wang, Huaisheng</creator><creator>Yang, Yilin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0556-5532</orcidid><orcidid>https://orcid.org/0000-0001-7413-2311</orcidid></search><sort><creationdate>20171001</creationdate><title>Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors</title><author>Zhang, Dongli ; Wang, Mingxiang ; Wang, Huaisheng ; Yang, Yilin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-22a92be2e0e82d1100bc9fe732bffe9b3db9bbb7f0da26ba7dd683c7ab7006d53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Bias</topic><topic>Charge carrier processes</topic><topic>Degradation</topic><topic>Light</topic><topic>Logic gates</topic><topic>Multigate</topic><topic>negative bias stress (NBS)</topic><topic>NIST</topic><topic>poly-Si</topic><topic>Semiconductor devices</topic><topic>Silicon films</topic><topic>Silicon wafers</topic><topic>Stress</topic><topic>Thin film transistors</topic><topic>thin-film transistor (TFT)</topic><topic>Threshold voltage</topic><topic>threshold voltage shift</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Dongli</creatorcontrib><creatorcontrib>Wang, Mingxiang</creatorcontrib><creatorcontrib>Wang, Huaisheng</creatorcontrib><creatorcontrib>Yang, Yilin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library Online</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Dongli</au><au>Wang, Mingxiang</au><au>Wang, Huaisheng</au><au>Yang, Yilin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2017-10-01</date><risdate>2017</risdate><volume>64</volume><issue>10</issue><spage>4363</spage><epage>4367</epage><pages>4363-4367</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this brief, a negative bias stress (NBS) induced degradation in n-type multigate polycrystalline silicon (poly-Si) thin-film transistor (TFT) is investigated. It is observed that after NBS the transfer characteristic curves shift to the negative gate bias direction and multigate TFTs degrade more than the single-gate TFTs with the same effective channel length. The observed degradation phenomenon is explained with short channel effect that is resulted from the diffusion and distribution of hole carriers in the channel, which are generated in the source/drain depletion region and swept into the channel when the junctions are reversely biased during NBS. Pronounced NBS degradation caused by increased hole carriers in the channel is also verified in NBS experiment with light illumination.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2017.2737489</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-0556-5532</orcidid><orcidid>https://orcid.org/0000-0001-7413-2311</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0018-9383
ispartof IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4363-4367
issn 0018-9383
1557-9646
language eng
recordid cdi_crossref_primary_10_1109_TED_2017_2737489
source IEEE Electronic Library (IEL) Journals
subjects Bias
Charge carrier processes
Degradation
Light
Logic gates
Multigate
negative bias stress (NBS)
NIST
poly-Si
Semiconductor devices
Silicon films
Silicon wafers
Stress
Thin film transistors
thin-film transistor (TFT)
Threshold voltage
threshold voltage shift
title Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-11-13T12%3A10%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhanced%20Negative%20Bias%20Stress%20Degradation%20in%20Multigate%20Polycrystalline%20Silicon%20Thin-Film%20Transistors&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Zhang,%20Dongli&rft.date=2017-10-01&rft.volume=64&rft.issue=10&rft.spage=4363&rft.epage=4367&rft.pages=4363-4367&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2017.2737489&rft_dat=%3Cproquest_cross%3E1939943698%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c291t-22a92be2e0e82d1100bc9fe732bffe9b3db9bbb7f0da26ba7dd683c7ab7006d53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1939943698&rft_id=info:pmid/&rft_ieee_id=8012560&rfr_iscdi=true