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The ambipolar evolution of a high-performance WSe 2 transistor assisted by a ferroelectric polymer
In recent years, the electrical characteristics of WSe field-effect transistors (FETs) have been widely investigated with various dielectrics. Among them, being able to perfectly tune the polarity of WSe is meaningful and promising work. In this work, we systematically study the electrical propertie...
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| Published in: | Nanotechnology 2018-03, Vol.29 (10), p.105202 |
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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Language: | English |
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| container_issue | 10 |
| container_start_page | 105202 |
| container_title | Nanotechnology |
| container_volume | 29 |
| creator | Li, Dan Wang, Xudong Chen, Yan Zhu, Sixin Gong, Fan Wu, Guangjian Meng, Caimin Liu, Lan Wang, Lin Lin, Tie Sun, Shuo Shen, Hong Wang, Xingjun Hu, Weida Wang, Jianlu Sun, Jinglan Meng, Xiangjian Chu, Junhao |
| description | In recent years, the electrical characteristics of WSe
field-effect transistors (FETs) have been widely investigated with various dielectrics. Among them, being able to perfectly tune the polarity of WSe
is meaningful and promising work. In this work, we systematically study the electrical properties of bilayer WSe
FETs modulated by ferroelectric polymer poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)). Compared to traditional gate dielectric SiO
, the P(VDF-TrFE) can not only tune both electron and hole concentrations to the same high level, but also improve the hole mobility of bilayer WSe
to 265.96 cm
V
s
under SiO
gating. Its drain current on/off ratio is also improved to 2 × 10
for p-type and 4 × 10
for n-type driven by P(VDF-TrFE). More importantly, the ambipolar behaviors of bilayer WSe
are effectively achieved and maintained because of the remnant polarization field of P(VDF-TrFE). This work indicates that WSe
FETs with P(VDF-TrFE) gating have huge potential for complementary logic transistor applications, and paves an effective way to achieve in-plane p-n junctions. |
| doi_str_mv | 10.1088/1361-6528/aaa629 |
| format | article |
| fullrecord | <record><control><sourceid>pubmed_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1361_6528_aaa629</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29384728</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1118-bd02a246b58a8ac351e1e07d99f88af50dfcfe6ce75632352c31dd3e9d5ba55d3</originalsourceid><addsrcrecordid>eNo9kE1Lw0AQhhdRbK3ePcn-gdj9yCaboxS_oODBiscwuztrI0k37KZC_70J1Z5mGN7nZXgIueXsnjOtl1wWPCuU0EsAKER1Ruan0zmZs0qVWZ7rfEauUvpmjHMt-CWZiUrqvBR6TsxmixQ60_ShhUjxJ7T7oQk7GjwFum2-tlmP0YfYwc4i_XxHKugQYZeaNIRIIU0LOmoOY95jjAFbtENsLB0rDx3Ga3LhoU148zcX5OPpcbN6ydZvz6-rh3Vm-fhXZhwTIPLCKA0arFQcObLSVZXXGrxizluPhcVSFVJIJazkzkmsnDKglJMLwo69NoaUIvq6j00H8VBzVk-66slNPbmpj7pG5O6I9HvToTsB_37kL72lZ-g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The ambipolar evolution of a high-performance WSe 2 transistor assisted by a ferroelectric polymer</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Li, Dan ; Wang, Xudong ; Chen, Yan ; Zhu, Sixin ; Gong, Fan ; Wu, Guangjian ; Meng, Caimin ; Liu, Lan ; Wang, Lin ; Lin, Tie ; Sun, Shuo ; Shen, Hong ; Wang, Xingjun ; Hu, Weida ; Wang, Jianlu ; Sun, Jinglan ; Meng, Xiangjian ; Chu, Junhao</creator><creatorcontrib>Li, Dan ; Wang, Xudong ; Chen, Yan ; Zhu, Sixin ; Gong, Fan ; Wu, Guangjian ; Meng, Caimin ; Liu, Lan ; Wang, Lin ; Lin, Tie ; Sun, Shuo ; Shen, Hong ; Wang, Xingjun ; Hu, Weida ; Wang, Jianlu ; Sun, Jinglan ; Meng, Xiangjian ; Chu, Junhao</creatorcontrib><description>In recent years, the electrical characteristics of WSe
field-effect transistors (FETs) have been widely investigated with various dielectrics. Among them, being able to perfectly tune the polarity of WSe
is meaningful and promising work. In this work, we systematically study the electrical properties of bilayer WSe
FETs modulated by ferroelectric polymer poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)). Compared to traditional gate dielectric SiO
, the P(VDF-TrFE) can not only tune both electron and hole concentrations to the same high level, but also improve the hole mobility of bilayer WSe
to 265.96 cm
V
s
under SiO
gating. Its drain current on/off ratio is also improved to 2 × 10
for p-type and 4 × 10
for n-type driven by P(VDF-TrFE). More importantly, the ambipolar behaviors of bilayer WSe
are effectively achieved and maintained because of the remnant polarization field of P(VDF-TrFE). This work indicates that WSe
FETs with P(VDF-TrFE) gating have huge potential for complementary logic transistor applications, and paves an effective way to achieve in-plane p-n junctions.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/aaa629</identifier><identifier>PMID: 29384728</identifier><language>eng</language><publisher>England</publisher><ispartof>Nanotechnology, 2018-03, Vol.29 (10), p.105202</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1118-bd02a246b58a8ac351e1e07d99f88af50dfcfe6ce75632352c31dd3e9d5ba55d3</citedby><cites>FETCH-LOGICAL-c1118-bd02a246b58a8ac351e1e07d99f88af50dfcfe6ce75632352c31dd3e9d5ba55d3</cites><orcidid>0000-0002-0261-6736 ; 0000-0001-5278-8969 ; 0000-0002-2291-2866</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/29384728$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Dan</creatorcontrib><creatorcontrib>Wang, Xudong</creatorcontrib><creatorcontrib>Chen, Yan</creatorcontrib><creatorcontrib>Zhu, Sixin</creatorcontrib><creatorcontrib>Gong, Fan</creatorcontrib><creatorcontrib>Wu, Guangjian</creatorcontrib><creatorcontrib>Meng, Caimin</creatorcontrib><creatorcontrib>Liu, Lan</creatorcontrib><creatorcontrib>Wang, Lin</creatorcontrib><creatorcontrib>Lin, Tie</creatorcontrib><creatorcontrib>Sun, Shuo</creatorcontrib><creatorcontrib>Shen, Hong</creatorcontrib><creatorcontrib>Wang, Xingjun</creatorcontrib><creatorcontrib>Hu, Weida</creatorcontrib><creatorcontrib>Wang, Jianlu</creatorcontrib><creatorcontrib>Sun, Jinglan</creatorcontrib><creatorcontrib>Meng, Xiangjian</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><title>The ambipolar evolution of a high-performance WSe 2 transistor assisted by a ferroelectric polymer</title><title>Nanotechnology</title><addtitle>Nanotechnology</addtitle><description>In recent years, the electrical characteristics of WSe
field-effect transistors (FETs) have been widely investigated with various dielectrics. Among them, being able to perfectly tune the polarity of WSe
is meaningful and promising work. In this work, we systematically study the electrical properties of bilayer WSe
FETs modulated by ferroelectric polymer poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)). Compared to traditional gate dielectric SiO
, the P(VDF-TrFE) can not only tune both electron and hole concentrations to the same high level, but also improve the hole mobility of bilayer WSe
to 265.96 cm
V
s
under SiO
gating. Its drain current on/off ratio is also improved to 2 × 10
for p-type and 4 × 10
for n-type driven by P(VDF-TrFE). More importantly, the ambipolar behaviors of bilayer WSe
are effectively achieved and maintained because of the remnant polarization field of P(VDF-TrFE). This work indicates that WSe
FETs with P(VDF-TrFE) gating have huge potential for complementary logic transistor applications, and paves an effective way to achieve in-plane p-n junctions.</description><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRbK3ePcn-gdj9yCaboxS_oODBiscwuztrI0k37KZC_70J1Z5mGN7nZXgIueXsnjOtl1wWPCuU0EsAKER1Ruan0zmZs0qVWZ7rfEauUvpmjHMt-CWZiUrqvBR6TsxmixQ60_ShhUjxJ7T7oQk7GjwFum2-tlmP0YfYwc4i_XxHKugQYZeaNIRIIU0LOmoOY95jjAFbtENsLB0rDx3Ga3LhoU148zcX5OPpcbN6ydZvz6-rh3Vm-fhXZhwTIPLCKA0arFQcObLSVZXXGrxizluPhcVSFVJIJazkzkmsnDKglJMLwo69NoaUIvq6j00H8VBzVk-66slNPbmpj7pG5O6I9HvToTsB_37kL72lZ-g</recordid><startdate>20180309</startdate><enddate>20180309</enddate><creator>Li, Dan</creator><creator>Wang, Xudong</creator><creator>Chen, Yan</creator><creator>Zhu, Sixin</creator><creator>Gong, Fan</creator><creator>Wu, Guangjian</creator><creator>Meng, Caimin</creator><creator>Liu, Lan</creator><creator>Wang, Lin</creator><creator>Lin, Tie</creator><creator>Sun, Shuo</creator><creator>Shen, Hong</creator><creator>Wang, Xingjun</creator><creator>Hu, Weida</creator><creator>Wang, Jianlu</creator><creator>Sun, Jinglan</creator><creator>Meng, Xiangjian</creator><creator>Chu, Junhao</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0261-6736</orcidid><orcidid>https://orcid.org/0000-0001-5278-8969</orcidid><orcidid>https://orcid.org/0000-0002-2291-2866</orcidid></search><sort><creationdate>20180309</creationdate><title>The ambipolar evolution of a high-performance WSe 2 transistor assisted by a ferroelectric polymer</title><author>Li, Dan ; Wang, Xudong ; Chen, Yan ; Zhu, Sixin ; Gong, Fan ; Wu, Guangjian ; Meng, Caimin ; Liu, Lan ; Wang, Lin ; Lin, Tie ; Sun, Shuo ; Shen, Hong ; Wang, Xingjun ; Hu, Weida ; Wang, Jianlu ; Sun, Jinglan ; Meng, Xiangjian ; Chu, Junhao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1118-bd02a246b58a8ac351e1e07d99f88af50dfcfe6ce75632352c31dd3e9d5ba55d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Dan</creatorcontrib><creatorcontrib>Wang, Xudong</creatorcontrib><creatorcontrib>Chen, Yan</creatorcontrib><creatorcontrib>Zhu, Sixin</creatorcontrib><creatorcontrib>Gong, Fan</creatorcontrib><creatorcontrib>Wu, Guangjian</creatorcontrib><creatorcontrib>Meng, Caimin</creatorcontrib><creatorcontrib>Liu, Lan</creatorcontrib><creatorcontrib>Wang, Lin</creatorcontrib><creatorcontrib>Lin, Tie</creatorcontrib><creatorcontrib>Sun, Shuo</creatorcontrib><creatorcontrib>Shen, Hong</creatorcontrib><creatorcontrib>Wang, Xingjun</creatorcontrib><creatorcontrib>Hu, Weida</creatorcontrib><creatorcontrib>Wang, Jianlu</creatorcontrib><creatorcontrib>Sun, Jinglan</creatorcontrib><creatorcontrib>Meng, Xiangjian</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Dan</au><au>Wang, Xudong</au><au>Chen, Yan</au><au>Zhu, Sixin</au><au>Gong, Fan</au><au>Wu, Guangjian</au><au>Meng, Caimin</au><au>Liu, Lan</au><au>Wang, Lin</au><au>Lin, Tie</au><au>Sun, Shuo</au><au>Shen, Hong</au><au>Wang, Xingjun</au><au>Hu, Weida</au><au>Wang, Jianlu</au><au>Sun, Jinglan</au><au>Meng, Xiangjian</au><au>Chu, Junhao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The ambipolar evolution of a high-performance WSe 2 transistor assisted by a ferroelectric polymer</atitle><jtitle>Nanotechnology</jtitle><addtitle>Nanotechnology</addtitle><date>2018-03-09</date><risdate>2018</risdate><volume>29</volume><issue>10</issue><spage>105202</spage><pages>105202-</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><abstract>In recent years, the electrical characteristics of WSe
field-effect transistors (FETs) have been widely investigated with various dielectrics. Among them, being able to perfectly tune the polarity of WSe
is meaningful and promising work. In this work, we systematically study the electrical properties of bilayer WSe
FETs modulated by ferroelectric polymer poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)). Compared to traditional gate dielectric SiO
, the P(VDF-TrFE) can not only tune both electron and hole concentrations to the same high level, but also improve the hole mobility of bilayer WSe
to 265.96 cm
V
s
under SiO
gating. Its drain current on/off ratio is also improved to 2 × 10
for p-type and 4 × 10
for n-type driven by P(VDF-TrFE). More importantly, the ambipolar behaviors of bilayer WSe
are effectively achieved and maintained because of the remnant polarization field of P(VDF-TrFE). This work indicates that WSe
FETs with P(VDF-TrFE) gating have huge potential for complementary logic transistor applications, and paves an effective way to achieve in-plane p-n junctions.</abstract><cop>England</cop><pmid>29384728</pmid><doi>10.1088/1361-6528/aaa629</doi><orcidid>https://orcid.org/0000-0002-0261-6736</orcidid><orcidid>https://orcid.org/0000-0001-5278-8969</orcidid><orcidid>https://orcid.org/0000-0002-2291-2866</orcidid></addata></record> |
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| title | The ambipolar evolution of a high-performance WSe 2 transistor assisted by a ferroelectric polymer |
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