Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As

The temperature dependence of the average energy consumed in the creation of an electron-hole pair in the wide bandgap compound semiconductor Al0.8Ga0.2As is reported following X-ray measurements made using an Al0.8Ga0.2As photodiode diode coupled to a low-noise charge-sensitive preamplifier operati...

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Published in:Applied physics letters 2013-05, Vol.102 (18)
Main Authors: Barnett, A. M., Lees, J. E., Bassford, D. J.
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Language:English
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Bassford, D. J.
description The temperature dependence of the average energy consumed in the creation of an electron-hole pair in the wide bandgap compound semiconductor Al0.8Ga0.2As is reported following X-ray measurements made using an Al0.8Ga0.2As photodiode diode coupled to a low-noise charge-sensitive preamplifier operating in spectroscopic photon counting mode. The temperature dependence is reported over the range of 261 K–342 K and is found to be best represented by the equation εAlGaAs = 7.327–0.0077 T, where εAlGaAs is the average electron-hole pair creation energy in eV and T is the temperature in K.
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title Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As
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