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Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry
The chemical stability of La-containing passivating layers /high-k gate stacks on Ge substrates is investigated by x-ray photoelectron spectroscopy. It is found that upon exposure to oxygen, a La-covered Ge surface spontaneously converts to a stable LaGeO x passivating layer. However, in the presenc...
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Published in: | Journal of applied physics 2010-09, Vol.108 (6), p.064115-064115-7 |
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container_end_page | 064115-7 |
container_issue | 6 |
container_start_page | 064115 |
container_title | Journal of applied physics |
container_volume | 108 |
creator | Tsoutsou, D. Panayiotatos, Y. Sotiropoulos, A. Mavrou, G. Golias, E. Galata, S. F. Dimoulas, A. |
description | The chemical stability of La-containing passivating layers /high-k gate stacks on Ge substrates is investigated by x-ray photoelectron spectroscopy. It is found that upon exposure to oxygen, a La-covered Ge surface spontaneously converts to a stable
LaGeO
x
passivating layer. However, in the presence of overlying metal layers such as Al and Hf or upon deposition of high-k metal oxide cap layers such as
Al
2
O
3
and
HfO
2
, the
LaGeO
x
layer strongly reacts with the overlayers forming
LaAlO
z
and
LaHfO
z
compounds. In the case of Al or
Al
2
O
3
, the
LaGeO
x
is completely dissociated, while in the case of Hf or
HfO
2
,
LaGeO
x
remains although with a change in composition. The results are interpreted in terms of oxygen densification according to which the strongly electropositive La drives the reaction toward the formation of oxides with the highest oxygen density. The results suggest that
HfO
2
has a better chemical compatibility with
LaGeO
x
making it more suitable for the gate stack. |
doi_str_mv | 10.1063/1.3478751 |
format | article |
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LaGeO
x
passivating layer. However, in the presence of overlying metal layers such as Al and Hf or upon deposition of high-k metal oxide cap layers such as
Al
2
O
3
and
HfO
2
, the
LaGeO
x
layer strongly reacts with the overlayers forming
LaAlO
z
and
LaHfO
z
compounds. In the case of Al or
Al
2
O
3
, the
LaGeO
x
is completely dissociated, while in the case of Hf or
HfO
2
,
LaGeO
x
remains although with a change in composition. The results are interpreted in terms of oxygen densification according to which the strongly electropositive La drives the reaction toward the formation of oxides with the highest oxygen density. The results suggest that
HfO
2
has a better chemical compatibility with
LaGeO
x
making it more suitable for the gate stack.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3478751</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2010-09, Vol.108 (6), p.064115-064115-7</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-ac2e439da7be6239d0d1ddaf1d00fe43ba5c3580e2ab1399b3851f7eb07d16a83</citedby><cites>FETCH-LOGICAL-c284t-ac2e439da7be6239d0d1ddaf1d00fe43ba5c3580e2ab1399b3851f7eb07d16a83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Tsoutsou, D.</creatorcontrib><creatorcontrib>Panayiotatos, Y.</creatorcontrib><creatorcontrib>Sotiropoulos, A.</creatorcontrib><creatorcontrib>Mavrou, G.</creatorcontrib><creatorcontrib>Golias, E.</creatorcontrib><creatorcontrib>Galata, S. F.</creatorcontrib><creatorcontrib>Dimoulas, A.</creatorcontrib><title>Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry</title><title>Journal of applied physics</title><description>The chemical stability of La-containing passivating layers /high-k gate stacks on Ge substrates is investigated by x-ray photoelectron spectroscopy. It is found that upon exposure to oxygen, a La-covered Ge surface spontaneously converts to a stable
LaGeO
x
passivating layer. However, in the presence of overlying metal layers such as Al and Hf or upon deposition of high-k metal oxide cap layers such as
Al
2
O
3
and
HfO
2
, the
LaGeO
x
layer strongly reacts with the overlayers forming
LaAlO
z
and
LaHfO
z
compounds. In the case of Al or
Al
2
O
3
, the
LaGeO
x
is completely dissociated, while in the case of Hf or
HfO
2
,
LaGeO
x
remains although with a change in composition. The results are interpreted in terms of oxygen densification according to which the strongly electropositive La drives the reaction toward the formation of oxides with the highest oxygen density. The results suggest that
HfO
2
has a better chemical compatibility with
LaGeO
x
making it more suitable for the gate stack.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1UL1OwzAQthBIlMLAG3hlCNhx0zgMSFUFBakSC8zRxb40hiSObBcp78LD4qiFjelO9_3c3UfINWe3nC3FHb8Vi1zmGT8hM85kkeRZxk7JjLGUJ7LIi3Ny4f0HY5xLUczI97rBzihoqQ9QmdaEkdqattCHBvp9R3foOughIB3Ae_MFwfS7iI_oqO3pBul-iLUxuyb5pBoH600wtr-nKzo0NthoH3WR4sNej5MmNEidbXFatAVqDhPTB3Q1KKRqOskHN16Ssxpaj1fHOifvT49v6-dk-7p5Wa-2iUrlIiSgUlyIQkNe4TKNDdNca6i5ZqyOSAWZEplkmELFRVFUQma8zrFiueZLkGJObg6-ylnvHdbl4EwHbiw5K6dYS14eY43chwPXKxNg-vR_8m-25V-2pRU_W4eDgg</recordid><startdate>20100915</startdate><enddate>20100915</enddate><creator>Tsoutsou, D.</creator><creator>Panayiotatos, Y.</creator><creator>Sotiropoulos, A.</creator><creator>Mavrou, G.</creator><creator>Golias, E.</creator><creator>Galata, S. F.</creator><creator>Dimoulas, A.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100915</creationdate><title>Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry</title><author>Tsoutsou, D. ; Panayiotatos, Y. ; Sotiropoulos, A. ; Mavrou, G. ; Golias, E. ; Galata, S. F. ; Dimoulas, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-ac2e439da7be6239d0d1ddaf1d00fe43ba5c3580e2ab1399b3851f7eb07d16a83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsoutsou, D.</creatorcontrib><creatorcontrib>Panayiotatos, Y.</creatorcontrib><creatorcontrib>Sotiropoulos, A.</creatorcontrib><creatorcontrib>Mavrou, G.</creatorcontrib><creatorcontrib>Golias, E.</creatorcontrib><creatorcontrib>Galata, S. F.</creatorcontrib><creatorcontrib>Dimoulas, A.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsoutsou, D.</au><au>Panayiotatos, Y.</au><au>Sotiropoulos, A.</au><au>Mavrou, G.</au><au>Golias, E.</au><au>Galata, S. F.</au><au>Dimoulas, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry</atitle><jtitle>Journal of applied physics</jtitle><date>2010-09-15</date><risdate>2010</risdate><volume>108</volume><issue>6</issue><spage>064115</spage><epage>064115-7</epage><pages>064115-064115-7</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The chemical stability of La-containing passivating layers /high-k gate stacks on Ge substrates is investigated by x-ray photoelectron spectroscopy. It is found that upon exposure to oxygen, a La-covered Ge surface spontaneously converts to a stable
LaGeO
x
passivating layer. However, in the presence of overlying metal layers such as Al and Hf or upon deposition of high-k metal oxide cap layers such as
Al
2
O
3
and
HfO
2
, the
LaGeO
x
layer strongly reacts with the overlayers forming
LaAlO
z
and
LaHfO
z
compounds. In the case of Al or
Al
2
O
3
, the
LaGeO
x
is completely dissociated, while in the case of Hf or
HfO
2
,
LaGeO
x
remains although with a change in composition. The results are interpreted in terms of oxygen densification according to which the strongly electropositive La drives the reaction toward the formation of oxides with the highest oxygen density. The results suggest that
HfO
2
has a better chemical compatibility with
LaGeO
x
making it more suitable for the gate stack.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3478751</doi></addata></record> |
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language | eng |
recordid | cdi_crossref_primary_10_1063_1_3478751 |
source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
title | Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry |
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