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Ferromagnetic and ordered MnSi(111) epitaxial layers
We report a comprehensive study of ordered MnSi films grown on Si(111) which provides clear proofs that these MnSi films have the same magnetic and electronic properties of bulk MnSi compound, so closing a long-standing question. Furthermore, our measurements show the presence of a room-temperature...
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| Published in: | Applied physics letters 2010-04, Vol.96 (15), p.152503-152503-3 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c350t-bd1c6359d8d943a2ce44082191c7ea20c0fe35a4c890c404fb94d2d157e2ae1d3 |
| container_end_page | 152503-3 |
| container_issue | 15 |
| container_start_page | 152503 |
| container_title | Applied physics letters |
| container_volume | 96 |
| creator | Magnano, E. Bondino, F. Cepek, C. Parmigiani, F. Mozzati, M. C. |
| description | We report a comprehensive study of ordered MnSi films grown on Si(111) which provides clear proofs that these MnSi films have the same magnetic and electronic properties of bulk MnSi compound, so closing a long-standing question. Furthermore, our measurements show the presence of a room-temperature ferromagnetic transition consistent with the ferromagnetic ground state predicted for Mn atoms with reduced coordination near surfaces and interfaces of silicon by recent calculations of
Hortamani
[
Phys. Rev. B
78
,
104402
(
2008
)]
. The possibility of growing layers on semiconductors which are ferromagnetic at room temperature (RT) is of paramount importance for nonvolatile memories and spintronic devices based on the injection of spin-polarized current from a ferromagnetic metal into a semiconductor. In this perspective MnSi films grown on Si substrates represent an interesting case study. |
| doi_str_mv | 10.1063/1.3392373 |
| format | article |
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Hortamani
[
Phys. Rev. B
78
,
104402
(
2008
)]
. The possibility of growing layers on semiconductors which are ferromagnetic at room temperature (RT) is of paramount importance for nonvolatile memories and spintronic devices based on the injection of spin-polarized current from a ferromagnetic metal into a semiconductor. In this perspective MnSi films grown on Si substrates represent an interesting case study.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3392373</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-04, Vol.96 (15), p.152503-152503-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-bd1c6359d8d943a2ce44082191c7ea20c0fe35a4c890c404fb94d2d157e2ae1d3</citedby><cites>FETCH-LOGICAL-c350t-bd1c6359d8d943a2ce44082191c7ea20c0fe35a4c890c404fb94d2d157e2ae1d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3392373$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,786,788,790,801,27957,27958,76741</link.rule.ids></links><search><creatorcontrib>Magnano, E.</creatorcontrib><creatorcontrib>Bondino, F.</creatorcontrib><creatorcontrib>Cepek, C.</creatorcontrib><creatorcontrib>Parmigiani, F.</creatorcontrib><creatorcontrib>Mozzati, M. C.</creatorcontrib><title>Ferromagnetic and ordered MnSi(111) epitaxial layers</title><title>Applied physics letters</title><description>We report a comprehensive study of ordered MnSi films grown on Si(111) which provides clear proofs that these MnSi films have the same magnetic and electronic properties of bulk MnSi compound, so closing a long-standing question. Furthermore, our measurements show the presence of a room-temperature ferromagnetic transition consistent with the ferromagnetic ground state predicted for Mn atoms with reduced coordination near surfaces and interfaces of silicon by recent calculations of
Hortamani
[
Phys. Rev. B
78
,
104402
(
2008
)]
. The possibility of growing layers on semiconductors which are ferromagnetic at room temperature (RT) is of paramount importance for nonvolatile memories and spintronic devices based on the injection of spin-polarized current from a ferromagnetic metal into a semiconductor. In this perspective MnSi films grown on Si substrates represent an interesting case study.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1j01LAzEURYMoOFYX_oNZ2sXU9_IyH9kIUqwKFRfqOqTJG4lMZ0oyC_vvHWk3LlxdLhwu9whxjbBAqOgWF0RaUk0nIkOo64IQm1ORAQAVlS7xXFyk9DXVUhJlQq04xmFrP3seg8tt7_Mheo7s85f-Ldwg4jznXRjtd7Bd3tk9x3QpzlrbJb465kx8rB7el0_F-vXxeXm_LhyVMBYbj66iUvvGa0VWOlYKGokaXc1WgoOWqbTKNRqcAtVutPLSY1mztIyeZmJ-2HVxSClya3YxbG3cGwTzq2vQHHUn9u7AJjedHcPQ_w__cTaTsxki_QCV8lst</recordid><startdate>20100412</startdate><enddate>20100412</enddate><creator>Magnano, E.</creator><creator>Bondino, F.</creator><creator>Cepek, C.</creator><creator>Parmigiani, F.</creator><creator>Mozzati, M. C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100412</creationdate><title>Ferromagnetic and ordered MnSi(111) epitaxial layers</title><author>Magnano, E. ; Bondino, F. ; Cepek, C. ; Parmigiani, F. ; Mozzati, M. C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-bd1c6359d8d943a2ce44082191c7ea20c0fe35a4c890c404fb94d2d157e2ae1d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Magnano, E.</creatorcontrib><creatorcontrib>Bondino, F.</creatorcontrib><creatorcontrib>Cepek, C.</creatorcontrib><creatorcontrib>Parmigiani, F.</creatorcontrib><creatorcontrib>Mozzati, M. C.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Magnano, E.</au><au>Bondino, F.</au><au>Cepek, C.</au><au>Parmigiani, F.</au><au>Mozzati, M. C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferromagnetic and ordered MnSi(111) epitaxial layers</atitle><jtitle>Applied physics letters</jtitle><date>2010-04-12</date><risdate>2010</risdate><volume>96</volume><issue>15</issue><spage>152503</spage><epage>152503-3</epage><pages>152503-152503-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report a comprehensive study of ordered MnSi films grown on Si(111) which provides clear proofs that these MnSi films have the same magnetic and electronic properties of bulk MnSi compound, so closing a long-standing question. Furthermore, our measurements show the presence of a room-temperature ferromagnetic transition consistent with the ferromagnetic ground state predicted for Mn atoms with reduced coordination near surfaces and interfaces of silicon by recent calculations of
Hortamani
[
Phys. Rev. B
78
,
104402
(
2008
)]
. The possibility of growing layers on semiconductors which are ferromagnetic at room temperature (RT) is of paramount importance for nonvolatile memories and spintronic devices based on the injection of spin-polarized current from a ferromagnetic metal into a semiconductor. In this perspective MnSi films grown on Si substrates represent an interesting case study.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3392373</doi></addata></record> |
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| ispartof | Applied physics letters, 2010-04, Vol.96 (15), p.152503-152503-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3392373 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建） |
| title | Ferromagnetic and ordered MnSi(111) epitaxial layers |
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