High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

We describe the growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia. The initial deposition of Al, at 1130–1190 K, resulted in a very rapid transition to a two-dimensional growth mode of AlN. The rapid transition is essential for the subsequent growth of high quality...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1999-10, Vol.75 (14), p.2073-2075
Main Authors: Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., Grave de Peralta, L., Seryogin, G. A., Temkin, H., Prokofyeva, T. I., Holtz, M., Chu, S. N. G.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c225t-93c1f690b545bc602a0c6cd2232756867d42bc40cf5c59f0b15a9518d36809d53
cites cdi_FETCH-LOGICAL-c225t-93c1f690b545bc602a0c6cd2232756867d42bc40cf5c59f0b15a9518d36809d53
container_end_page 2075
container_issue 14
container_start_page 2073
container_title Applied physics letters
container_volume 75
creator Nikishin, S. A.
Faleev, N. N.
Antipov, V. G.
Francoeur, S.
Grave de Peralta, L.
Seryogin, G. A.
Temkin, H.
Prokofyeva, T. I.
Holtz, M.
Chu, S. N. G.
description We describe the growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia. The initial deposition of Al, at 1130–1190 K, resulted in a very rapid transition to a two-dimensional growth mode of AlN. The rapid transition is essential for the subsequent growth of high quality GaN and AlGaN. This procedure also resulted in complete elimination of cracking in thick (>2 μm) GaN layers. For layers thicker than 1.5 μm, the full width at half maximum of the (0002) GaN diffraction peak was less than 14 arc sec. We show that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire.
doi_str_mv 10.1063/1.124920
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_124920</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_124920</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-93c1f690b545bc602a0c6cd2232756867d42bc40cf5c59f0b15a9518d36809d53</originalsourceid><addsrcrecordid>eNotkEFLwzAYhoMoWKfgT_iO89D5fUmTtkcZuglDD9NzSdO0i7TrTFpm_72TeXp4Lw-8D2P3hAtCJR5pQTzJOV6wiDBNY0GUXbIIEUWscknX7CaEr9OUXIiIbdeu2cH3qFs3TLDSb9D4_riHfg9bNyeiBygnaHSA0I_eWOj61pqx1R5KqzuwBzfonwmObtiB7rp-7_Qtu6p1G-zdP2fs8-X5Y7mON--r1-XTJjacyyHOhaFa5VjKRJZGIddolKk4FzyVKlNplfDSJGhqaWReY0lSnw5klVAZ5pUUMzY_e43vQ_C2Lg7eddpPBWHxF6Og4hxD_AK6uU8R</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Nikishin, S. A. ; Faleev, N. N. ; Antipov, V. G. ; Francoeur, S. ; Grave de Peralta, L. ; Seryogin, G. A. ; Temkin, H. ; Prokofyeva, T. I. ; Holtz, M. ; Chu, S. N. G.</creator><creatorcontrib>Nikishin, S. A. ; Faleev, N. N. ; Antipov, V. G. ; Francoeur, S. ; Grave de Peralta, L. ; Seryogin, G. A. ; Temkin, H. ; Prokofyeva, T. I. ; Holtz, M. ; Chu, S. N. G.</creatorcontrib><description>We describe the growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia. The initial deposition of Al, at 1130–1190 K, resulted in a very rapid transition to a two-dimensional growth mode of AlN. The rapid transition is essential for the subsequent growth of high quality GaN and AlGaN. This procedure also resulted in complete elimination of cracking in thick (&gt;2 μm) GaN layers. For layers thicker than 1.5 μm, the full width at half maximum of the (0002) GaN diffraction peak was less than 14 arc sec. We show that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.124920</identifier><language>eng</language><ispartof>Applied physics letters, 1999-10, Vol.75 (14), p.2073-2075</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-93c1f690b545bc602a0c6cd2232756867d42bc40cf5c59f0b15a9518d36809d53</citedby><cites>FETCH-LOGICAL-c225t-93c1f690b545bc602a0c6cd2232756867d42bc40cf5c59f0b15a9518d36809d53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,788,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Nikishin, S. A.</creatorcontrib><creatorcontrib>Faleev, N. N.</creatorcontrib><creatorcontrib>Antipov, V. G.</creatorcontrib><creatorcontrib>Francoeur, S.</creatorcontrib><creatorcontrib>Grave de Peralta, L.</creatorcontrib><creatorcontrib>Seryogin, G. A.</creatorcontrib><creatorcontrib>Temkin, H.</creatorcontrib><creatorcontrib>Prokofyeva, T. I.</creatorcontrib><creatorcontrib>Holtz, M.</creatorcontrib><creatorcontrib>Chu, S. N. G.</creatorcontrib><title>High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia</title><title>Applied physics letters</title><description>We describe the growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia. The initial deposition of Al, at 1130–1190 K, resulted in a very rapid transition to a two-dimensional growth mode of AlN. The rapid transition is essential for the subsequent growth of high quality GaN and AlGaN. This procedure also resulted in complete elimination of cracking in thick (&gt;2 μm) GaN layers. For layers thicker than 1.5 μm, the full width at half maximum of the (0002) GaN diffraction peak was less than 14 arc sec. We show that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotkEFLwzAYhoMoWKfgT_iO89D5fUmTtkcZuglDD9NzSdO0i7TrTFpm_72TeXp4Lw-8D2P3hAtCJR5pQTzJOV6wiDBNY0GUXbIIEUWscknX7CaEr9OUXIiIbdeu2cH3qFs3TLDSb9D4_riHfg9bNyeiBygnaHSA0I_eWOj61pqx1R5KqzuwBzfonwmObtiB7rp-7_Qtu6p1G-zdP2fs8-X5Y7mON--r1-XTJjacyyHOhaFa5VjKRJZGIddolKk4FzyVKlNplfDSJGhqaWReY0lSnw5klVAZ5pUUMzY_e43vQ_C2Lg7eddpPBWHxF6Og4hxD_AK6uU8R</recordid><startdate>19991004</startdate><enddate>19991004</enddate><creator>Nikishin, S. A.</creator><creator>Faleev, N. N.</creator><creator>Antipov, V. G.</creator><creator>Francoeur, S.</creator><creator>Grave de Peralta, L.</creator><creator>Seryogin, G. A.</creator><creator>Temkin, H.</creator><creator>Prokofyeva, T. I.</creator><creator>Holtz, M.</creator><creator>Chu, S. N. G.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19991004</creationdate><title>High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia</title><author>Nikishin, S. A. ; Faleev, N. N. ; Antipov, V. G. ; Francoeur, S. ; Grave de Peralta, L. ; Seryogin, G. A. ; Temkin, H. ; Prokofyeva, T. I. ; Holtz, M. ; Chu, S. N. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-93c1f690b545bc602a0c6cd2232756867d42bc40cf5c59f0b15a9518d36809d53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nikishin, S. A.</creatorcontrib><creatorcontrib>Faleev, N. N.</creatorcontrib><creatorcontrib>Antipov, V. G.</creatorcontrib><creatorcontrib>Francoeur, S.</creatorcontrib><creatorcontrib>Grave de Peralta, L.</creatorcontrib><creatorcontrib>Seryogin, G. A.</creatorcontrib><creatorcontrib>Temkin, H.</creatorcontrib><creatorcontrib>Prokofyeva, T. I.</creatorcontrib><creatorcontrib>Holtz, M.</creatorcontrib><creatorcontrib>Chu, S. N. G.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nikishin, S. A.</au><au>Faleev, N. N.</au><au>Antipov, V. G.</au><au>Francoeur, S.</au><au>Grave de Peralta, L.</au><au>Seryogin, G. A.</au><au>Temkin, H.</au><au>Prokofyeva, T. I.</au><au>Holtz, M.</au><au>Chu, S. N. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia</atitle><jtitle>Applied physics letters</jtitle><date>1999-10-04</date><risdate>1999</risdate><volume>75</volume><issue>14</issue><spage>2073</spage><epage>2075</epage><pages>2073-2075</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We describe the growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia. The initial deposition of Al, at 1130–1190 K, resulted in a very rapid transition to a two-dimensional growth mode of AlN. The rapid transition is essential for the subsequent growth of high quality GaN and AlGaN. This procedure also resulted in complete elimination of cracking in thick (&gt;2 μm) GaN layers. For layers thicker than 1.5 μm, the full width at half maximum of the (0002) GaN diffraction peak was less than 14 arc sec. We show that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire.</abstract><doi>10.1063/1.124920</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1999-10, Vol.75 (14), p.2073-2075
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_124920
source American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T17%3A23%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20quality%20GaN%20grown%20on%20Si(111)%20by%20gas%20source%20molecular%20beam%20epitaxy%20with%20ammonia&rft.jtitle=Applied%20physics%20letters&rft.au=Nikishin,%20S.%20A.&rft.date=1999-10-04&rft.volume=75&rft.issue=14&rft.spage=2073&rft.epage=2075&rft.pages=2073-2075&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.124920&rft_dat=%3Ccrossref%3E10_1063_1_124920%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c225t-93c1f690b545bc602a0c6cd2232756867d42bc40cf5c59f0b15a9518d36809d53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true