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Structural, optical and transport properties of layered europium disulfide synthesized under high pressure
Materials readily forming stacks down to monolayer thickness and simultaneously possessing a finite bandgap are highly attractive from both fundamental and applied points of view. In this work, high-quality single-crystal samples of a novel layered compound, europium disulfide (EuS 2 ), were synthes...
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| Published in: | CrystEngComm 2023-05, Vol.25 (19), p.2966-2978 |
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| Main Authors: | , , , , , , , , , , |
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| cites | cdi_FETCH-LOGICAL-c281t-d65afc9f17910fcd1f63b42d6f800b1b466460d02e5d42ad16d1438aaf3ee5b73 |
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| creator | Ekimov, E. A Nikolaev, S. N Ivanova, A. G Sidorov, V. A Shiryaev, A. A Usmanov, I. I Vasiliev, A. L Artemov, V. V Kondrin, M. V Chernopitsskiy, M. A Krivobok, V. S |
| description | Materials readily forming stacks down to monolayer thickness and simultaneously possessing a finite bandgap are highly attractive from both fundamental and applied points of view. In this work, high-quality single-crystal samples of a novel layered compound, europium disulfide (EuS
2
), were synthesized under high-temperature-high-pressure conditions and characterized by complementary methods. According to single-crystal X-ray diffraction, the compound crystallizes in a monoclinic structure (space group
P
2
1
/
a
). Flakes down to 1-2 nm thick can be obtained by mechanical exfoliation; the angular dependence of the polarized Raman intensity allows determination of the flakes' orientation. Infrared spectra demonstrate a rich structure in a broad energy range, possibly arising from excitonic effects and interatomic transitions in Eu ions. Measurements of the Seebeck coefficient and
ab initio
modeling show that the material is a p-type semiconductor with a 0.9 eV indirect bandgap. At low temperatures, electrical conductivity follows Mott's law, implying the presence of defects, possibly related to the disordering of covalent S-S bonds.
A novel layered compound - europium disulfide - was synthesized under high-temperature-high-pressure conditions and characterized by complementary methods. |
| doi_str_mv | 10.1039/d2ce01647h |
| format | article |
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2
), were synthesized under high-temperature-high-pressure conditions and characterized by complementary methods. According to single-crystal X-ray diffraction, the compound crystallizes in a monoclinic structure (space group
P
2
1
/
a
). Flakes down to 1-2 nm thick can be obtained by mechanical exfoliation; the angular dependence of the polarized Raman intensity allows determination of the flakes' orientation. Infrared spectra demonstrate a rich structure in a broad energy range, possibly arising from excitonic effects and interatomic transitions in Eu ions. Measurements of the Seebeck coefficient and
ab initio
modeling show that the material is a p-type semiconductor with a 0.9 eV indirect bandgap. At low temperatures, electrical conductivity follows Mott's law, implying the presence of defects, possibly related to the disordering of covalent S-S bonds.
A novel layered compound - europium disulfide - was synthesized under high-temperature-high-pressure conditions and characterized by complementary methods.</description><identifier>ISSN: 1466-8033</identifier><identifier>EISSN: 1466-8033</identifier><identifier>DOI: 10.1039/d2ce01647h</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Crystal defects ; Electrical resistivity ; Energy gap ; Europium ; Europium compounds ; Flakes (defects) ; High pressure ; High temperature ; Infrared spectra ; Low temperature ; Optical properties ; P-type semiconductors ; Seebeck effect ; Single crystals ; Synthesis ; Transport properties</subject><ispartof>CrystEngComm, 2023-05, Vol.25 (19), p.2966-2978</ispartof><rights>Copyright Royal Society of Chemistry 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c281t-d65afc9f17910fcd1f63b42d6f800b1b466460d02e5d42ad16d1438aaf3ee5b73</citedby><cites>FETCH-LOGICAL-c281t-d65afc9f17910fcd1f63b42d6f800b1b466460d02e5d42ad16d1438aaf3ee5b73</cites><orcidid>0000-0001-5978-4530 ; 0000-0002-5253-8481 ; 0000-0003-4497-8863 ; 0000-0001-7644-0078 ; 0000-0001-6739-7338</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Ekimov, E. A</creatorcontrib><creatorcontrib>Nikolaev, S. N</creatorcontrib><creatorcontrib>Ivanova, A. G</creatorcontrib><creatorcontrib>Sidorov, V. A</creatorcontrib><creatorcontrib>Shiryaev, A. A</creatorcontrib><creatorcontrib>Usmanov, I. I</creatorcontrib><creatorcontrib>Vasiliev, A. L</creatorcontrib><creatorcontrib>Artemov, V. V</creatorcontrib><creatorcontrib>Kondrin, M. V</creatorcontrib><creatorcontrib>Chernopitsskiy, M. A</creatorcontrib><creatorcontrib>Krivobok, V. S</creatorcontrib><title>Structural, optical and transport properties of layered europium disulfide synthesized under high pressure</title><title>CrystEngComm</title><description>Materials readily forming stacks down to monolayer thickness and simultaneously possessing a finite bandgap are highly attractive from both fundamental and applied points of view. In this work, high-quality single-crystal samples of a novel layered compound, europium disulfide (EuS
2
), were synthesized under high-temperature-high-pressure conditions and characterized by complementary methods. According to single-crystal X-ray diffraction, the compound crystallizes in a monoclinic structure (space group
P
2
1
/
a
). Flakes down to 1-2 nm thick can be obtained by mechanical exfoliation; the angular dependence of the polarized Raman intensity allows determination of the flakes' orientation. Infrared spectra demonstrate a rich structure in a broad energy range, possibly arising from excitonic effects and interatomic transitions in Eu ions. Measurements of the Seebeck coefficient and
ab initio
modeling show that the material is a p-type semiconductor with a 0.9 eV indirect bandgap. At low temperatures, electrical conductivity follows Mott's law, implying the presence of defects, possibly related to the disordering of covalent S-S bonds.
A novel layered compound - europium disulfide - was synthesized under high-temperature-high-pressure conditions and characterized by complementary methods.</description><subject>Crystal defects</subject><subject>Electrical resistivity</subject><subject>Energy gap</subject><subject>Europium</subject><subject>Europium compounds</subject><subject>Flakes (defects)</subject><subject>High pressure</subject><subject>High temperature</subject><subject>Infrared spectra</subject><subject>Low temperature</subject><subject>Optical properties</subject><subject>P-type semiconductors</subject><subject>Seebeck effect</subject><subject>Single crystals</subject><subject>Synthesis</subject><subject>Transport properties</subject><issn>1466-8033</issn><issn>1466-8033</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpNkE1PwzAMhiMEEmNw4Y4UiRuikK9l3RFtgyFN4gCcqzRxaKauLfk4jF9PYAg42bIf-7VfhM4puaGEz24N00CoFNPmAI2okLIoCeeH__JjdBLChhAqKCUjtHmOPumYvGqvcT9Ep1WLVWdw9KoLQ-8jHnw_gI8OAu4tbtUOPBgMKZdd2mLjQmqtM4DDrosNBPeR26kz4HHj3po8DyEkD6foyKo2wNlPHKPX--XLfFWsnx4e53frQrOSxsLIibJ6Zul0RonVhlrJa8GMtCUhNa3zI0ISQxhMjGDKUGmo4KVSlgNM6ikfo8v93nz4e4IQq02ffJclqywgWMlYWWbqak9p34fgwVaDd1vldxUl1ZeX1YLNl99erjJ8sYd90L_cn9f8E3v-cyw</recordid><startdate>20230517</startdate><enddate>20230517</enddate><creator>Ekimov, E. A</creator><creator>Nikolaev, S. N</creator><creator>Ivanova, A. G</creator><creator>Sidorov, V. A</creator><creator>Shiryaev, A. A</creator><creator>Usmanov, I. I</creator><creator>Vasiliev, A. L</creator><creator>Artemov, V. V</creator><creator>Kondrin, M. V</creator><creator>Chernopitsskiy, M. A</creator><creator>Krivobok, V. S</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5978-4530</orcidid><orcidid>https://orcid.org/0000-0002-5253-8481</orcidid><orcidid>https://orcid.org/0000-0003-4497-8863</orcidid><orcidid>https://orcid.org/0000-0001-7644-0078</orcidid><orcidid>https://orcid.org/0000-0001-6739-7338</orcidid></search><sort><creationdate>20230517</creationdate><title>Structural, optical and transport properties of layered europium disulfide synthesized under high pressure</title><author>Ekimov, E. A ; Nikolaev, S. N ; Ivanova, A. G ; Sidorov, V. A ; Shiryaev, A. A ; Usmanov, I. I ; Vasiliev, A. L ; Artemov, V. V ; Kondrin, M. V ; Chernopitsskiy, M. A ; Krivobok, V. S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c281t-d65afc9f17910fcd1f63b42d6f800b1b466460d02e5d42ad16d1438aaf3ee5b73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Crystal defects</topic><topic>Electrical resistivity</topic><topic>Energy gap</topic><topic>Europium</topic><topic>Europium compounds</topic><topic>Flakes (defects)</topic><topic>High pressure</topic><topic>High temperature</topic><topic>Infrared spectra</topic><topic>Low temperature</topic><topic>Optical properties</topic><topic>P-type semiconductors</topic><topic>Seebeck effect</topic><topic>Single crystals</topic><topic>Synthesis</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ekimov, E. A</creatorcontrib><creatorcontrib>Nikolaev, S. N</creatorcontrib><creatorcontrib>Ivanova, A. G</creatorcontrib><creatorcontrib>Sidorov, V. A</creatorcontrib><creatorcontrib>Shiryaev, A. A</creatorcontrib><creatorcontrib>Usmanov, I. I</creatorcontrib><creatorcontrib>Vasiliev, A. L</creatorcontrib><creatorcontrib>Artemov, V. V</creatorcontrib><creatorcontrib>Kondrin, M. V</creatorcontrib><creatorcontrib>Chernopitsskiy, M. A</creatorcontrib><creatorcontrib>Krivobok, V. S</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>CrystEngComm</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ekimov, E. A</au><au>Nikolaev, S. N</au><au>Ivanova, A. G</au><au>Sidorov, V. A</au><au>Shiryaev, A. A</au><au>Usmanov, I. I</au><au>Vasiliev, A. L</au><au>Artemov, V. V</au><au>Kondrin, M. V</au><au>Chernopitsskiy, M. A</au><au>Krivobok, V. S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural, optical and transport properties of layered europium disulfide synthesized under high pressure</atitle><jtitle>CrystEngComm</jtitle><date>2023-05-17</date><risdate>2023</risdate><volume>25</volume><issue>19</issue><spage>2966</spage><epage>2978</epage><pages>2966-2978</pages><issn>1466-8033</issn><eissn>1466-8033</eissn><notes>Electronic supplementary information (ESI) available. CCDC</notes><notes>https://doi.org/10.1039/d2ce01647h</notes><notes>2220113</notes><notes>For crystallographic data in CIF or other electronic format see DOI</notes><abstract>Materials readily forming stacks down to monolayer thickness and simultaneously possessing a finite bandgap are highly attractive from both fundamental and applied points of view. In this work, high-quality single-crystal samples of a novel layered compound, europium disulfide (EuS
2
), were synthesized under high-temperature-high-pressure conditions and characterized by complementary methods. According to single-crystal X-ray diffraction, the compound crystallizes in a monoclinic structure (space group
P
2
1
/
a
). Flakes down to 1-2 nm thick can be obtained by mechanical exfoliation; the angular dependence of the polarized Raman intensity allows determination of the flakes' orientation. Infrared spectra demonstrate a rich structure in a broad energy range, possibly arising from excitonic effects and interatomic transitions in Eu ions. Measurements of the Seebeck coefficient and
ab initio
modeling show that the material is a p-type semiconductor with a 0.9 eV indirect bandgap. At low temperatures, electrical conductivity follows Mott's law, implying the presence of defects, possibly related to the disordering of covalent S-S bonds.
A novel layered compound - europium disulfide - was synthesized under high-temperature-high-pressure conditions and characterized by complementary methods.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d2ce01647h</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0001-5978-4530</orcidid><orcidid>https://orcid.org/0000-0002-5253-8481</orcidid><orcidid>https://orcid.org/0000-0003-4497-8863</orcidid><orcidid>https://orcid.org/0000-0001-7644-0078</orcidid><orcidid>https://orcid.org/0000-0001-6739-7338</orcidid></addata></record> |
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| source | Royal Society of Chemistry:Jisc Collections:Royal Society of Chemistry Read and Publish 2022-2024 (reading list) |
| subjects | Crystal defects Electrical resistivity Energy gap Europium Europium compounds Flakes (defects) High pressure High temperature Infrared spectra Low temperature Optical properties P-type semiconductors Seebeck effect Single crystals Synthesis Transport properties |
| title | Structural, optical and transport properties of layered europium disulfide synthesized under high pressure |
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