Thermally activated electrical conductivity of thin films of bis(phthalocyaninato)terbium(III) double decker complex
The temperature and field dependence of the electrical conductance of neutral radical bis(phthalocyaninato)terbium(III) (TbPc2) thin films was measured in situ under ultrahigh vacuum. The films behave electrically as narrow gap intrinsic semiconductors, having high conductivity and weakly thermally...
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Thermally activated electrical conductivity of thin films of bis(phthalocyaninato)terbium(III) double decker complex |
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Murdey, Richard Katoh, Keiichi Yamashita, Masahiro Sato, Naoki |
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Electrical conduction Molecular electronics Organic radicals Organic semiconductors Phthalocyanine Thin films |
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Thin solid films, 2018-01, Vol.646, p.17-20 |
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The temperature and field dependence of the electrical conductance of neutral radical bis(phthalocyaninato)terbium(III) (TbPc2) thin films was measured in situ under ultrahigh vacuum. The films behave electrically as narrow gap intrinsic semiconductors, having high conductivity and weakly thermally activated conductance. Taking advantage of the exceptionally high electrical stability of the material and the fast-settling response in the low-field region, precise measurements of the temperature dependence could resolve a linear temperature dependence in the pre-exponential factor of the conduction equation. The activation energy of conductance of the annealed TbPc2 film was determined to be 0.158eV after adjusting the fitting procedure to take into account the temperature dependent pre-exponential. This new conductance equation, which differs only slightly from the usual Arrhenius expression, arises as the natural consequence of thermal excitation of carriers from a continuous density of deep trap states, or a similar activated process where either the states or the barrier heights distribute over a finite width.
•The pre-exponential factor of the conductance equation is temperature dependent.•Activation energies calculated from an Arrhenius plot are therefore overestimated.•The correct activation energy of the terbium bisphthalocyanine thin film is 0.158eV. |
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ISSN: 0040-6090 |
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<record><control><sourceid>elsevier_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1016_j_tsf_2017_11_024</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609017308702</els_id><sourcerecordid>S0040609017308702</sourcerecordid><originalsourceid>FETCH-LOGICAL-c406t-ee97b19b8b971b60875155647ca6759e3def84c6efc46e0df8b836fedaca510e3</originalsourceid><addsrcrecordid>eNp9kMtqwzAQRUVpoWnaD-jOy2Rhd8YP2aarEvoIFLpp10KWRkSpbAdJCc3f1yFddzVchnO5HMbuETIE5A_bLAaT5YB1hphBXl6wGTZ1m-Z1gZdsBlBCyqGFa3YTwhYAMM-LGYufG_K9dO6YSBXtQUbSCTlS0VslXaLGQe9PDxuPyWiSuLFDYqzrwyl1Nix2m7iRblRHOdhBxnEZyXd23y_W6_Uy0eO-c5RoUt_kp7Z-5-jnll0Z6QLd_d05-3p5_ly9pe8fr-vV03uqSuAxJWrrDtuu6doaOw5NXWFV8bJWktdVS4Um05SKk1ElJ9Cm6ZqCG9JSyQqBijnDc6_yYwiejNh520t_FAjipE1sxaRNnLQJRDFpm5jHM0PTsIMlL4KyNCjS1k9WhB7tP_QvBYF43Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><isCDI>true</isCDI><recordtype>article</recordtype></control><display><type>article</type><title>Thermally activated electrical conductivity of thin films of bis(phthalocyaninato)terbium(III) double decker complex</title><source>ScienceDirect®</source><source>Alma/SFX Local Collection</source><creator>Murdey, Richard ; Katoh, Keiichi ; Yamashita, Masahiro ; Sato, Naoki</creator><creatorcontrib>Murdey, Richard ; Katoh, Keiichi ; Yamashita, Masahiro ; Sato, Naoki</creatorcontrib><description>The temperature and field dependence of the electrical conductance of neutral radical bis(phthalocyaninato)terbium(III) (TbPc2) thin films was measured in situ under ultrahigh vacuum. The films behave electrically as narrow gap intrinsic semiconductors, having high conductivity and weakly thermally activated conductance. Taking advantage of the exceptionally high electrical stability of the material and the fast-settling response in the low-field region, precise measurements of the temperature dependence could resolve a linear temperature dependence in the pre-exponential factor of the conduction equation. The activation energy of conductance of the annealed TbPc2 film was determined to be 0.158eV after adjusting the fitting procedure to take into account the temperature dependent pre-exponential. This new conductance equation, which differs only slightly from the usual Arrhenius expression, arises as the natural consequence of thermal excitation of carriers from a continuous density of deep trap states, or a similar activated process where either the states or the barrier heights distribute over a finite width.
•The pre-exponential factor of the conductance equation is temperature dependent.•Activation energies calculated from an Arrhenius plot are therefore overestimated.•The correct activation energy of the terbium bisphthalocyanine thin film is 0.158eV.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2017.11.024</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Electrical conduction ; Molecular electronics ; Organic radicals ; Organic semiconductors ; Phthalocyanine ; Thin films</subject><ispartof>Thin solid films, 2018-01, Vol.646, p.17-20</ispartof><rights>2017 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-ee97b19b8b971b60875155647ca6759e3def84c6efc46e0df8b836fedaca510e3</citedby><cites>FETCH-LOGICAL-c406t-ee97b19b8b971b60875155647ca6759e3def84c6efc46e0df8b836fedaca510e3</cites><orcidid>0000-0001-7621-9664</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609017308702$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,787,791,3569,27985,27986,46162</link.rule.ids></links><search><creatorcontrib>Murdey, Richard</creatorcontrib><creatorcontrib>Katoh, Keiichi</creatorcontrib><creatorcontrib>Yamashita, Masahiro</creatorcontrib><creatorcontrib>Sato, Naoki</creatorcontrib><title>Thermally activated electrical conductivity of thin films of bis(phthalocyaninato)terbium(III) double decker complex</title><title>Thin solid films</title><description>The temperature and field dependence of the electrical conductance of neutral radical bis(phthalocyaninato)terbium(III) (TbPc2) thin films was measured in situ under ultrahigh vacuum. The films behave electrically as narrow gap intrinsic semiconductors, having high conductivity and weakly thermally activated conductance. Taking advantage of the exceptionally high electrical stability of the material and the fast-settling response in the low-field region, precise measurements of the temperature dependence could resolve a linear temperature dependence in the pre-exponential factor of the conduction equation. The activation energy of conductance of the annealed TbPc2 film was determined to be 0.158eV after adjusting the fitting procedure to take into account the temperature dependent pre-exponential. This new conductance equation, which differs only slightly from the usual Arrhenius expression, arises as the natural consequence of thermal excitation of carriers from a continuous density of deep trap states, or a similar activated process where either the states or the barrier heights distribute over a finite width.
•The pre-exponential factor of the conductance equation is temperature dependent.•Activation energies calculated from an Arrhenius plot are therefore overestimated.•The correct activation energy of the terbium bisphthalocyanine thin film is 0.158eV.</description><subject>Electrical conduction</subject><subject>Molecular electronics</subject><subject>Organic radicals</subject><subject>Organic semiconductors</subject><subject>Phthalocyanine</subject><subject>Thin films</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kMtqwzAQRUVpoWnaD-jOy2Rhd8YP2aarEvoIFLpp10KWRkSpbAdJCc3f1yFddzVchnO5HMbuETIE5A_bLAaT5YB1hphBXl6wGTZ1m-Z1gZdsBlBCyqGFa3YTwhYAMM-LGYufG_K9dO6YSBXtQUbSCTlS0VslXaLGQe9PDxuPyWiSuLFDYqzrwyl1Nix2m7iRblRHOdhBxnEZyXd23y_W6_Uy0eO-c5RoUt_kp7Z-5-jnll0Z6QLd_d05-3p5_ly9pe8fr-vV03uqSuAxJWrrDtuu6doaOw5NXWFV8bJWktdVS4Um05SKk1ElJ9Cm6ZqCG9JSyQqBijnDc6_yYwiejNh520t_FAjipE1sxaRNnLQJRDFpm5jHM0PTsIMlL4KyNCjS1k9WhB7tP_QvBYF43Q</recordid><startdate>20180131</startdate><enddate>20180131</enddate><creator>Murdey, Richard</creator><creator>Katoh, Keiichi</creator><creator>Yamashita, Masahiro</creator><creator>Sato, Naoki</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-7621-9664</orcidid></search><sort><creationdate>20180131</creationdate><title>Thermally activated electrical conductivity of thin films of bis(phthalocyaninato)terbium(III) double decker complex</title><author>Murdey, Richard ; Katoh, Keiichi ; Yamashita, Masahiro ; Sato, Naoki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-ee97b19b8b971b60875155647ca6759e3def84c6efc46e0df8b836fedaca510e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Electrical conduction</topic><topic>Molecular electronics</topic><topic>Organic radicals</topic><topic>Organic semiconductors</topic><topic>Phthalocyanine</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Murdey, Richard</creatorcontrib><creatorcontrib>Katoh, Keiichi</creatorcontrib><creatorcontrib>Yamashita, Masahiro</creatorcontrib><creatorcontrib>Sato, Naoki</creatorcontrib><collection>CrossRef</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Murdey, Richard</au><au>Katoh, Keiichi</au><au>Yamashita, Masahiro</au><au>Sato, Naoki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermally activated electrical conductivity of thin films of bis(phthalocyaninato)terbium(III) double decker complex</atitle><jtitle>Thin solid films</jtitle><date>2018-01-31</date><risdate>2018</risdate><volume>646</volume><spage>17</spage><epage>20</epage><pages>17-20</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><abstract>The temperature and field dependence of the electrical conductance of neutral radical bis(phthalocyaninato)terbium(III) (TbPc2) thin films was measured in situ under ultrahigh vacuum. The films behave electrically as narrow gap intrinsic semiconductors, having high conductivity and weakly thermally activated conductance. Taking advantage of the exceptionally high electrical stability of the material and the fast-settling response in the low-field region, precise measurements of the temperature dependence could resolve a linear temperature dependence in the pre-exponential factor of the conduction equation. The activation energy of conductance of the annealed TbPc2 film was determined to be 0.158eV after adjusting the fitting procedure to take into account the temperature dependent pre-exponential. This new conductance equation, which differs only slightly from the usual Arrhenius expression, arises as the natural consequence of thermal excitation of carriers from a continuous density of deep trap states, or a similar activated process where either the states or the barrier heights distribute over a finite width.
•The pre-exponential factor of the conductance equation is temperature dependent.•Activation energies calculated from an Arrhenius plot are therefore overestimated.•The correct activation energy of the terbium bisphthalocyanine thin film is 0.158eV.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2017.11.024</doi><orcidid>https://orcid.org/0000-0001-7621-9664</orcidid><oa>free_for_read</oa></addata></record> |