Radiation hard 3D silicon pixel sensors for use in the ATLAS detector at the HL-LHC

The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation fluences above 1 × 1016 neqcm-2. Novel 3D silicon pixel sensors o...

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Main Authors: Heggelund, Andreas, Huiberts, Simon Kristian, Dorholt, Ole, Read, Alexander Lincoln, Røhne, Ole Myren, Sandaker, Heidi, Lauritzen, Magne Eik, Stugu, Bjarne Sandvik, Kok, Angela, Koybasi, Ozhan, Povoli, Marco, Bomben, M, Lange, J, Rummler, André
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creator Heggelund, Andreas
Huiberts, Simon Kristian
Dorholt, Ole
Read, Alexander Lincoln
Røhne, Ole Myren
Sandaker, Heidi
Lauritzen, Magne Eik
Stugu, Bjarne Sandvik
Kok, Angela
Koybasi, Ozhan
Povoli, Marco
Bomben, M
Lange, J
Rummler, André
description The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation fluences above 1 × 1016 neqcm-2. Novel 3D silicon pixel sensors offer a superior radiation tolerance compared to conventional planar pixel sensors, and are thus excellent candidates for the innermost parts of the ITk. This paper presents studies of 3D pixel sensors with pixel size 50 × 50 μm2 mounted on the RD53A prototype readout chip. Following a description of the design and fabrication steps, Test Beam results are presented for unirradiated as well as heavily irradiated sensors. For particles passing at perpendicular incidence, it is shown that average efficiencies above 96% are reached for sensors exposed to fluences of 1 × 1016 neqcm-2 when biased to 80 V.
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title Radiation hard 3D silicon pixel sensors for use in the ATLAS detector at the HL-LHC
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