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Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC
The silicon vacancy ( V Si) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation remains a challenge, and, recently, it was shown that common formation metho...
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| Published in: | Journal of applied physics 2020-02, Vol.127 (8) |
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| container_title | Journal of applied physics |
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| creator | Bathen, M. E. Galeckas, A. Coutinho, J. Vines, L. |
| description | The silicon vacancy (
V
Si) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation remains a challenge, and, recently, it was shown that common formation methods such as proton irradiation may, in fact, lower the intensity of photoluminescence (PL) emission from
V
Si as compared to other ion species. Herein, we combine hybrid density functional calculations and PL studies of the proton-irradiated n-type 4H-SiC material to explore the energetics and stability of hydrogen-related defects, situated both interstitially and in defect complexes with
V
Si, and confirm the stability of hydrogen in different interstitial and substitutional configurations. Indeed,
V
Si-H is energetically favorable if
V
Si is already present in the material, e.g., following irradiation or ion implantation. We demonstrate that hydrogen has a significant impact on electrical and optical properties of
V
Si, by altering the charge states suitable for quantum technology applications, and provide an estimate for the shift in thermodynamic transition levels. Furthermore, by correlating the theoretical predictions with PL measurements of 4H-SiC samples irradiated by protons at high (
400
°C) and room temperatures, we associate the observed quenching of
V
Si emission in the case of high-temperature and high-fluence proton irradiation with the increased mobility of H
i, which may initiate
V
Si-H complex formation at temperatures above
400
°C. The important implication of hydrogen being present is that it obstructs the formation of reliable and efficient single-photon emitters based on silicon vacancy defects in 4H-SiC. |
| doi_str_mv | 10.1063/1.5140659 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_crist</sourceid><recordid>TN_cdi_cristin_nora_10852_77357</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2362471609</sourcerecordid><originalsourceid>FETCH-LOGICAL-c452t-9c544a10fbd047686bb5d234aebfe6a17fb15c787f0b1f18b5ee9f955e75a7543</originalsourceid><addsrcrecordid>eNqdkFFLwzAQx4MoOKcPfgIDPil0Jm3SNI8y1A0GIupzSNPEZbRJTbrBvr0ZnfguHNxx_Phz9wPgGqMZRmXxgGcUE1RSfgImGFU8Y5SiUzBBKMdZxRk_BxcxbhDCuCr4BLwtnWm32ikNvYHrfRP8l3bQdn0r3SAH6x1MpTsb42E2wXdwWGsYbWtVWuykkk7toXWQLLJ3O78EZ0a2UV8d-xR8Pj99zBfZ6vVlOX9cZYrQfMi4ooRIjEzdIMLKqqxr2uQFkbo2upSYmRpTxSpmUI0NrmqqNTecUs2oZJQUU3Az5qpg42CdcD5IkX6muWCsoCwRtyPRB_-91XEQG78NLh0l8qLMCcMl4om6-83xMQZtRB9sJ8M-ZYmDU4HF0Wli70c2KjvK-R-88-EPFH1jih8Ms4MD</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2362471609</pqid></control><display><type>article</type><title>Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>NORA - Norwegian Open Research Archives</source><creator>Bathen, M. E. ; Galeckas, A. ; Coutinho, J. ; Vines, L.</creator><creatorcontrib>Bathen, M. E. ; Galeckas, A. ; Coutinho, J. ; Vines, L.</creatorcontrib><description>The silicon vacancy (
V
Si) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation remains a challenge, and, recently, it was shown that common formation methods such as proton irradiation may, in fact, lower the intensity of photoluminescence (PL) emission from
V
Si as compared to other ion species. Herein, we combine hybrid density functional calculations and PL studies of the proton-irradiated n-type 4H-SiC material to explore the energetics and stability of hydrogen-related defects, situated both interstitially and in defect complexes with
V
Si, and confirm the stability of hydrogen in different interstitial and substitutional configurations. Indeed,
V
Si-H is energetically favorable if
V
Si is already present in the material, e.g., following irradiation or ion implantation. We demonstrate that hydrogen has a significant impact on electrical and optical properties of
V
Si, by altering the charge states suitable for quantum technology applications, and provide an estimate for the shift in thermodynamic transition levels. Furthermore, by correlating the theoretical predictions with PL measurements of 4H-SiC samples irradiated by protons at high (
400
°C) and room temperatures, we associate the observed quenching of
V
Si emission in the case of high-temperature and high-fluence proton irradiation with the increased mobility of H
i, which may initiate
V
Si-H complex formation at temperatures above
400
°C. The important implication of hydrogen being present is that it obstructs the formation of reliable and efficient single-photon emitters based on silicon vacancy defects in 4H-SiC.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5140659</identifier><identifier>CODEN: JAPIAU</identifier><language>eng ; nor</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Complex formation ; Defects ; Emission ; Emitters ; Fluence ; High temperature ; Hydrogen ; Ion implantation ; Optical properties ; Photoluminescence ; Photons ; Proton irradiation ; Room temperature ; Stability ; Vacancies</subject><ispartof>Journal of applied physics, 2020-02, Vol.127 (8)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). Published under license by AIP Publishing.</rights><rights>info:eu-repo/semantics/openAccess</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c452t-9c544a10fbd047686bb5d234aebfe6a17fb15c787f0b1f18b5ee9f955e75a7543</citedby><cites>FETCH-LOGICAL-c452t-9c544a10fbd047686bb5d234aebfe6a17fb15c787f0b1f18b5ee9f955e75a7543</cites><orcidid>0000-0001-5988-5980 ; 0000-0002-6269-3530 ; 0000-0003-0280-366X ; 0000-0001-5759-7192</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,786,790,891,26600,27957,27958</link.rule.ids></links><search><creatorcontrib>Bathen, M. E.</creatorcontrib><creatorcontrib>Galeckas, A.</creatorcontrib><creatorcontrib>Coutinho, J.</creatorcontrib><creatorcontrib>Vines, L.</creatorcontrib><title>Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC</title><title>Journal of applied physics</title><description>The silicon vacancy (
V
Si) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation remains a challenge, and, recently, it was shown that common formation methods such as proton irradiation may, in fact, lower the intensity of photoluminescence (PL) emission from
V
Si as compared to other ion species. Herein, we combine hybrid density functional calculations and PL studies of the proton-irradiated n-type 4H-SiC material to explore the energetics and stability of hydrogen-related defects, situated both interstitially and in defect complexes with
V
Si, and confirm the stability of hydrogen in different interstitial and substitutional configurations. Indeed,
V
Si-H is energetically favorable if
V
Si is already present in the material, e.g., following irradiation or ion implantation. We demonstrate that hydrogen has a significant impact on electrical and optical properties of
V
Si, by altering the charge states suitable for quantum technology applications, and provide an estimate for the shift in thermodynamic transition levels. Furthermore, by correlating the theoretical predictions with PL measurements of 4H-SiC samples irradiated by protons at high (
400
°C) and room temperatures, we associate the observed quenching of
V
Si emission in the case of high-temperature and high-fluence proton irradiation with the increased mobility of H
i, which may initiate
V
Si-H complex formation at temperatures above
400
°C. The important implication of hydrogen being present is that it obstructs the formation of reliable and efficient single-photon emitters based on silicon vacancy defects in 4H-SiC.</description><subject>Applied physics</subject><subject>Complex formation</subject><subject>Defects</subject><subject>Emission</subject><subject>Emitters</subject><subject>Fluence</subject><subject>High temperature</subject><subject>Hydrogen</subject><subject>Ion implantation</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Photons</subject><subject>Proton irradiation</subject><subject>Room temperature</subject><subject>Stability</subject><subject>Vacancies</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>3HK</sourceid><recordid>eNqdkFFLwzAQx4MoOKcPfgIDPil0Jm3SNI8y1A0GIupzSNPEZbRJTbrBvr0ZnfguHNxx_Phz9wPgGqMZRmXxgGcUE1RSfgImGFU8Y5SiUzBBKMdZxRk_BxcxbhDCuCr4BLwtnWm32ikNvYHrfRP8l3bQdn0r3SAH6x1MpTsb42E2wXdwWGsYbWtVWuykkk7toXWQLLJ3O78EZ0a2UV8d-xR8Pj99zBfZ6vVlOX9cZYrQfMi4ooRIjEzdIMLKqqxr2uQFkbo2upSYmRpTxSpmUI0NrmqqNTecUs2oZJQUU3Az5qpg42CdcD5IkX6muWCsoCwRtyPRB_-91XEQG78NLh0l8qLMCcMl4om6-83xMQZtRB9sJ8M-ZYmDU4HF0Wli70c2KjvK-R-88-EPFH1jih8Ms4MD</recordid><startdate>20200224</startdate><enddate>20200224</enddate><creator>Bathen, M. E.</creator><creator>Galeckas, A.</creator><creator>Coutinho, J.</creator><creator>Vines, L.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>3HK</scope><orcidid>https://orcid.org/0000-0001-5988-5980</orcidid><orcidid>https://orcid.org/0000-0002-6269-3530</orcidid><orcidid>https://orcid.org/0000-0003-0280-366X</orcidid><orcidid>https://orcid.org/0000-0001-5759-7192</orcidid></search><sort><creationdate>20200224</creationdate><title>Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC</title><author>Bathen, M. E. ; Galeckas, A. ; Coutinho, J. ; Vines, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c452t-9c544a10fbd047686bb5d234aebfe6a17fb15c787f0b1f18b5ee9f955e75a7543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; nor</language><creationdate>2020</creationdate><topic>Applied physics</topic><topic>Complex formation</topic><topic>Defects</topic><topic>Emission</topic><topic>Emitters</topic><topic>Fluence</topic><topic>High temperature</topic><topic>Hydrogen</topic><topic>Ion implantation</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Photons</topic><topic>Proton irradiation</topic><topic>Room temperature</topic><topic>Stability</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bathen, M. E.</creatorcontrib><creatorcontrib>Galeckas, A.</creatorcontrib><creatorcontrib>Coutinho, J.</creatorcontrib><creatorcontrib>Vines, L.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>NORA - Norwegian Open Research Archives</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bathen, M. E.</au><au>Galeckas, A.</au><au>Coutinho, J.</au><au>Vines, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC</atitle><jtitle>Journal of applied physics</jtitle><date>2020-02-24</date><risdate>2020</risdate><volume>127</volume><issue>8</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><notes>NFR/251131</notes><abstract>The silicon vacancy (
V
Si) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation remains a challenge, and, recently, it was shown that common formation methods such as proton irradiation may, in fact, lower the intensity of photoluminescence (PL) emission from
V
Si as compared to other ion species. Herein, we combine hybrid density functional calculations and PL studies of the proton-irradiated n-type 4H-SiC material to explore the energetics and stability of hydrogen-related defects, situated both interstitially and in defect complexes with
V
Si, and confirm the stability of hydrogen in different interstitial and substitutional configurations. Indeed,
V
Si-H is energetically favorable if
V
Si is already present in the material, e.g., following irradiation or ion implantation. We demonstrate that hydrogen has a significant impact on electrical and optical properties of
V
Si, by altering the charge states suitable for quantum technology applications, and provide an estimate for the shift in thermodynamic transition levels. Furthermore, by correlating the theoretical predictions with PL measurements of 4H-SiC samples irradiated by protons at high (
400
°C) and room temperatures, we associate the observed quenching of
V
Si emission in the case of high-temperature and high-fluence proton irradiation with the increased mobility of H
i, which may initiate
V
Si-H complex formation at temperatures above
400
°C. The important implication of hydrogen being present is that it obstructs the formation of reliable and efficient single-photon emitters based on silicon vacancy defects in 4H-SiC.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5140659</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0001-5988-5980</orcidid><orcidid>https://orcid.org/0000-0002-6269-3530</orcidid><orcidid>https://orcid.org/0000-0003-0280-366X</orcidid><orcidid>https://orcid.org/0000-0001-5759-7192</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2020-02, Vol.127 (8) |
| issn | 0021-8979 1089-7550 |
| language | eng ; nor |
| recordid | cdi_cristin_nora_10852_77357 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); NORA - Norwegian Open Research Archives |
| subjects | Applied physics Complex formation Defects Emission Emitters Fluence High temperature Hydrogen Ion implantation Optical properties Photoluminescence Photons Proton irradiation Room temperature Stability Vacancies |
| title | Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC |
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