Search Results - Yun Heub Song

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  1. 41
    A novel gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance with disturbance-less program operation

    A novel gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance with disturbance-less program operation by Sim, Jae-Min, Kang, In-Ku, Hong, Sung-In, Kim, Changhan, Cho, Changhyun, Min, Kyunghoon, Song, Yun-Heub

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  2. 42
    Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film

    Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film by Choi, Chul-Min, Oh, Young-Taek, Kim, Kyung-Jun, Park, Jin-Suk, Sukegawa, Hiroaki, Mitani, Seiji, Kim, Sung-Kyu, Lee, Jeong-Yong, Song, Yun-Heub

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  3. 43
    Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors

    Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors by Roh, Il Pyo, Kim, Sang Hyeon, Song, Yun Heub, Song, Jin Dong

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  4. 44
    Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computing

    Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computing by Kang, Shin-young, Jin, Soo-min, Lee, Ju-young, Woo, Dae-seong, Shim, Tae-hun, Nam, In-ho, Park, Jea-gun, Sutou, Yuji, Song, Yun-heub

    Published in Electronics (Basel)
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  5. 45
    Novel device structure for phase change memory toward low-current operation

    Novel device structure for phase change memory toward low-current operation by Kim, Eunha, Kang, Nam Soo, Yang, Hyung-Jun, Sutou, Yuji, Song, Yun-Heub

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  6. 46
    Design of FPGA-Based LZ77 Compressor With Runtime Configurable Compression Ratio and Throughput

    Design of FPGA-Based LZ77 Compressor With Runtime Configurable Compression Ratio and Throughput by Choi, Seungdo, Kim, Youngil, Lee, Daeyong, Lee, Sangjin, Park, Kibin, Song, Yun Heub, Song, Yong Ho

    Published in IEEE access
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  7. 47
    Multiresistance Characteristics of PCRAM With Ge1Cu2Te3 and Ge2Sb2Te5 Films

    Multiresistance Characteristics of PCRAM With Ge1Cu2Te3 and Ge2Sb2Te5 Films by SAITO, Yuta, YUN HEUB SONG, JUNG MIN LEE, SUTOU, Yuji, KOIKE, Junichi

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  8. 48
    High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

    High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb by Kim, Sang-Hyeon, Roh, Ilpyo, Han, Jae-Hoon, Geum, Dae-Myeong, Kim, Seong Kwang, Kang, Soo Seok, Kang, Hang-Kyu, Lee, Woo Chul, Kim, Seong Keun, Hwang, Do Kyung, Song, Yun Heub, Song, Jin Dong

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  9. 49
    Thickness and temperature dependences of the degradation and the breakdown for MgO-based magnetic tunnel junctions

    Thickness and temperature dependences of the degradation and the breakdown for MgO-based magnetic tunnel junctions by Lee, Jung-Min, Song, Yun-Heub

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  10. 50
    Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture

    Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture by Song, Yun Heub, Park, Seung Young, Lee, Jung Min, Yang, Hyung Jun, Kil, Gyu Hyun

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  11. 51
    Bidirectional Two-Terminal Switching Device with Metal--Semiconductor--Semiconductor Structures for 4F2 Spin-Transfer-Torque Magnetoresistance Random Access Memory Cell

    Bidirectional Two-Terminal Switching Device with Metal--Semiconductor--Semiconductor Structures for 4F2 Spin-Transfer-Torque Magnetoresistance Random Access Memory Cell by Kil, Gyu-Hyun, Song, Yun-Heub

    Published in Jpn J Appl Phys
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  12. 52
    Multiresistance Characteristics of PCRAM With \hbox\hbox\hbox and \hbox \hbox\hbox Films

    Multiresistance Characteristics of PCRAM With \hbox\hbox\hbox and \hbox \hbox\hbox Films by Saito, Y., Yun Heub Song, Jung Min Lee, Sutou, Y., Koike, J.

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  13. 53
    Physical modeling of program and erase speeds of metal-oxide-nitride-oxide-silicon cells with three-dimensional gate-all-around architecture

    Physical modeling of program and erase speeds of metal-oxide-nitride-oxide-silicon cells with three-dimensional gate-all-around architecture by Lee, Gae-Hun, Yang, Hyung-Jun, Jung, Sung-Wook, Choi, Eun-Seok, Park, Sung-Kye, Song, Yun-Heub

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  14. 54
    A Novel Structure for Improving Erase Performance of Vertical Channel NAND Flash With an Indium-Gallium-Zinc-Oxide Channel

    A Novel Structure for Improving Erase Performance of Vertical Channel NAND Flash With an Indium-Gallium-Zinc-Oxide Channel by Choi, Seonjun, Kim, Bongsueg, Jeong, Jae Kyeong, Song, Yun Heub

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  15. 55
    Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory

    Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory by Park, Yong-Sik, Kil, Gyu-Hyun, Song, Yun-Heub

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  16. 56
    High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach

    High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach by Yang, Hyun Ji, Seul, Hyeon Joo, Kim, Min Jae, Kim, Yerin, Cho, Hyun Cheol, Cho, Min Hoe, Song, Yun Heub, Yang, Hoichang, Jeong, Jae Kyeong

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  17. 57
    Understanding the Origin of Low-Energy Operation Characteristics for Cr 2 Ge 2 Te 6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device

    Understanding the Origin of Low-Energy Operation Characteristics for Cr 2 Ge 2 Te 6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device by Hatayama, Shogo, Yamamoto, Takuya, Mori, Shunsuke, Song, Yun-Heub, Sutou, Yuji

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  18. 58
    Impact of etch angles on cell characteristics in 3D NAND flash memory

    Impact of etch angles on cell characteristics in 3D NAND flash memory by Oh, Young-Taek, Kim, Kyu-Beom, Shin, Sang-Hoon, Sim, Hahng, Van Toan, Nguyen, Ono, Takahito, Song, Yun-Heub

    Published in Microelectronics
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  19. 59
    Characteristics of a Multiple Alloy Nanodot Memory with an Enhanced Charge Storage Capability

    Characteristics of a Multiple Alloy Nanodot Memory with an Enhanced Charge Storage Capability by Song, Yun Heub, Bea, Ji Chel, Tanaka, Tetsu, Koyanagi, Mitsumasa

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  20. 60
    Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

    Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film by Shuang, Yi, Mori, Shunsuke, Yamamoto, Takuya, Hatayama, Shogo, Saito, Yuta, Fons, Paul J., Song, Yun-Heub, Hong, Jin-Pyo, Ando, Daisuke, Sutou, Yuji

    Published in ACS nano
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