Study of channel length scaling in large-scale graphene FETs by Shu-Jen Han, Yanning Sun, Bol, Ageeth A, Haensch, Wilfried, Zhihong Chen

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Improve variability in carbon nanotube FETs by scaling by Yanning Sun, Tuleski, George, Shu-Jen Han, Haensch, Wilfried, Zhihong Chen

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High mobility III-V channel MOSFETs for post-Si CMOS applications by Yanning Sun, Kiewra, E.W., De Souza, J.P., Koester, S.J., Bucchignano, J.J., Ruiz, N., Fogel, K.E., Sadana, D.K., Shahidi, G.G., Fompeyrine, J., Webb, D.J., Sousa, M., Marchiori, C., Germann, R., Shiu, K.T.

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Enhancement-mode In0.70Ga0.30As-channel MOSFETs with ALD Al2O3 by Yanning Sun, Kiewra, E.W., De Souza, J.P., Koester, S.J., Fogel, K.E., Sadana, D.K.

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Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers by Koester, S. J., Kiewra, E. W., Sun, Yanning, Neumayer, D. A., Ott, J. A., Copel, M., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J.-P., Marchiori, C., Sousa, M., Germann, R.

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CMOS-Compatible Self-Aligned In sub(0.53)Ga sub(0.47)As MOSFETs With Gate Lengths Down to 30 nm by Majumdar, Amlan, Sun, Yanning, Cheng, Cheng-Wei, Kim, Young-Hee, Rana, Uzma, Martin, Ryan M, Bruce, Robert L, Shiu, Kuen-Ting, Zhu, Yu, Farmer, Damon B, Hopstaken, Marinus, Joseph, Eric A, de Souza, Joel P, Frank, Martin M, Cheng, Szu-Lin, Kobayashi, Masaharu, Duch, Elizabeth A, Sadana, Devendra K, Park, Dae-Gyu, Leobandung, Effendi

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(Invited) CMOS Compatible High Performance IIIV Devices: Opportunities and Challenges by Sun, Yanning, Shiu, Kuen-Ting, Cheng, Cheng-Wei, Majumdar, Amlan, Bruce, Robert, Yau, Jeng-bang, Farmer, Damon, Zhu, Yu, Hopstaken, Marinus, Frank, Martin M., Ando, Takashi, Lee, Ko-tao, Rozen, John, Sadana, Devendra K., Narayanan, Vijay, Mo, Renee T., Leobandung, Effendi

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Efficient drift dominated photodiodes using defected materials by Sun, Yanning, Yulius, Aristo, Woodall, Jerry M.

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Enhancement-Mode Buried-Channel \hbox \hbox\hbox\hbox\hbox MOSFETs With High- \kappa Gate Dielectrics by Sun, Yanning, Kiewra, E. W., Koester, S. J., Ruiz, N., Callegari, A., Fogel, K. E., Sadana, D. K., Fompeyrine, J., Webb, D. J., Locquet, J.-P., Sousa, M., Germann, R., Shiu, K. T., Forrest, S. R.

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Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with Hf O 2 gate dielectrics and α - Si ∕ Si O 2 interlayers by Koester, S. J., Kiewra, E. W., Sun, Yanning, Neumayer, D. A., Ott, J. A., Copel, M., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J.-P., Marchiori, C., Sousa, M., Germann, R.

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Enhancement-mode buried-channel In0.7Ga0.3As/In0.52Al0.48AsMOSFETs with high-κ gate dielectrics by YANNING SUN, KIEWRA, E. W, SOUSA, M, GERMANN, R, SHIU, K. T, FORREST, S. R, KOESTER, S. J, RUIZ, N, CALLEGARI, A, FOGEL, K. E, SADANA, D. K, FOMPEYRINE, J, WEBB, D. J, LOCQUET, J.-P

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Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs by Hopstaken, Marinus J., Pfeiffer, Dirk, Gordon, Michael S., Kiewra, Edward W., Sun, Yanning, Sadana, Devendra K., Topuria, Teya, Rice, Philip M., Ronsheim, Paul, Gerl, Christian, Marchiori, Chiara, Richter, Mirja, Sousa, Marilyne, Fompeyrine, Jean

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High Performance Long-and Short-Channel In0.7Ga0.3As-channel MOSFETs by Yanning Sun, Kiewra, E.W., de Souza, J.P., Bucchignano, J.J., Fogel, K.E., Sadana, D.K., Shahidi, G.G.

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Drift dominated InP/GaP photodiodes by Sun, Yanning, Yulius, Aristo, Li, Guohua, Woodall, Jerry M.

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Highly linear polyethylenes using the 2-（1-（2,4-dibenzhydrylnaphthylimino）ethyl）-6-（1-（arylimino）ethyl）- pyridylcobalt chlorides： synthesis, characterization and ethylene polymeriz... by Erlin Yue Yanning Zeng Wenjuan Zhang Yang Sun Xiao-Ping Cao Wen-Hua Sun

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Buried-channel In0.70Ga0.30As/In0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics by Sun, Yanning, Koester, S. J., Kiewra, E. W., Fogel, K. E., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J.-p., Sousa, M., Germann, R.

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GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO2 Gate Dielectrics by Koester, S. J., Kiewra, E. W., Sun, Yanning, Neumayer, D. A., Ott, J. A., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J.-p., Sousa, M., Germann, R.

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Extraction of Hemicellulose from Acacia Wood via Autohydrolysis and Ethanol Precipitation by Shi, HaiQiang, Guo, KaiYuan, Sun, YanNing, Li, Na, Zhang, Jian, Niu, MeiHong, Ping, QingWei

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Scaling of In0.7Ga0.3As buried-channel MOSFETs by Yanning Sun, Kiewra, E.W., de Souza, J.P., Bucchignano, J.J., Fogel, K.E., Sadana, D.K., Shahidi, G.G.

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Radiation hard, double-graded, drift-dominated InP solar cells by Yanning Sun, Woodall, J.M., Warner, J.H., Walters, R.J., Freeouf, J.L., Yulius, A., Guohua Li

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