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Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
by
MOISEEV, K. D
,
ROMANOV, V. V
,
VORONINA, T. I
,
LAGUNOVA, T. S
,
MIKHAILOVA, M. P
,
YAKOVLEV, Yu. P
Published in
Journal of crystal growth
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Type II GaAs x Sb 1− x /InAs ( x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
by
Moiseev, K.D.
,
Romanov, V.V.
,
Voronina, T.I.
,
Lagunova, T.S.
,
Mikhailova, M.P.
,
Yakovlev, Yu.P.
Published in
Journal of crystal growth
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The effect of tellurium diffusion from an n-GaSb:Te substrate on the properties of GaInAsSb solid solutions grown from lead-containing melt
by
Voronina, T. I.
,
Lagunova, T. S.
,
Lipaev, A. F.
,
Kunitsyna, E. V.
,
Parkhomenko, Ya. A.
,
Sipovskaya, M. A.
,
Yakovlev, Yu. P.
Published in
Semiconductors (Woodbury, N.Y.)
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Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3–5 μm
by
Moiseev, K.D
,
Mikhailova, M.P
,
Zhurtanov, B.I
,
Voronina, T.I
,
Andreychuk, O.V
,
Stoyanov, N.D
,
Yakovlev, Yu.P
Published in
Applied surface science
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Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions
by
Mikhailova, M.P.
,
Voronina, T.I.
,
Lagunova, T.S.
,
Moiseev, K.D.
,
Obukhov, S.A.
,
Rozov, A.E.
,
Yakovlev, Yu.P.
Published in
Superlattices and microstructures
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