Search Results - Veety, M.T.

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  1. 1
    Gate leakage effects of annealing Lanthanum Oxide on Gallium Nitride

    Gate leakage effects of annealing Lanthanum Oxide on Gallium Nitride by Veety, M.T., Wheeler, V.D., Lichtenwalner, D.J., Johnson, M.A.L., Barlage, D.W.

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  2. 2
    Analytical model of source injection for N-type enhancement mode GaN-based Schottky source/drain MOSFET

    Analytical model of source injection for N-type enhancement mode GaN-based Schottky source/drain MOSFET by Jaehoon Park, Ozbek, A.M., Lei Ma, Veety, M.T., Morgensen, M.P., Barlage, D.W., Wheeler, V.D., Johnson, M.A.L.

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    Projections of Schottky Barrier source-drain Gallium Nitride MOSFET based on TCAD simulation and experimental results

    Projections of Schottky Barrier source-drain Gallium Nitride MOSFET based on TCAD simulation and experimental results by Ozbek, A.M., Veety, M.T., Morgensen, M., Lei Ma, Johnson, M.A.L., Barlage, D.W.

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