Search Results - Tiedemann, A.T.

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  1. 1
    SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

    SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications by Wirths, S., Buca, D., Ikonic, Z., Harrison, P., Tiedemann, A.T., Holländer, B., Stoica, T., Mussler, G., Breuer, U., Hartmann, J.M., Grützmacher, D., Mantl, S.

    Published in Thin solid films
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  2. 2
    Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

    Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6 by Wirths, S., Buca, D., Tiedemann, A.T., Bernardy, P., Holländer, B., Stoica, T., Mussler, G., Breuer, U., Mantl, S.

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  3. 3
    Epitaxial Growth of Ge 1-x Sn x by Reduced Pressure CVD Using SnCl 4 and Ge 2 H 6

    Epitaxial Growth of Ge 1-x Sn x by Reduced Pressure CVD Using SnCl 4 and Ge 2 H 6 by Wirths, Stephan, Buca, Dan, Tiedemann, A.T., Holländer, Bernhard, Bernardy, Patric, Stoica, Toma, Grützmacher, Detlev, Mantl, Siegfried

    Published in ECS transactions
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