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Search Results - Tessmer, A.J.
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W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
by
Chao, P.C.
,
Tessmer, A.J.
,
Duh, K.-H.G.
,
Ho, P.
,
Kao, M.-Y.
,
Smith, P.M.
,
Ballingall, J.M.
,
Liu, S.-M.J.
,
Jabra, A.A.
Published in
IEEE electron device letters
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Diamond devices and electrical properties
by
Fox, B.A.
,
Hartsell, M.L.
,
Malta, D.M.
,
Wynands, H.A.
,
Kao, C.-T.
,
Plano, L.S.
,
Tessmer, G.J.
,
Henard, R.B.
,
Holmes, J.S.
,
Tessmer, A.J.
,
Dreifus, D.L.
Published in
Diamond and related materials
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Polycrystalline diamond field-effect transistors
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Tessmer, A.J.
,
Das, K.
,
Dreifus, D.L.
Published in
Diamond and related materials
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Current-voltage characteristics of in situ doped polycrystalline diamond field-effect transistors
by
Tessmer, A.J.
,
Plano, L.S.
,
Dreifus, D.L.
Published in
IEEE transactions on electron devices
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Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs: modelling and experiment
by
Shin, M.W.
,
Trew, R.J.
,
Bilbro, G.L.
,
Dreifus, D.L.
,
Tessmer, A.J.
Published in
Journal of materials science. Materials in electronics
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Performance evaluation of heterojunction bipolar transistors designed for high optical gain
by
Enquist, P.
,
Paolella, A.
,
Morris, A.S.
,
Reed, F.E.
,
DeBarros, L.
,
Tessmer, A.J.
,
Hutchby, J.A.
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