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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – x N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
by
Ratnikov, V V
,
Sheglov, M P
,
B. Ya. Ber
,
D. Yu. Kazantsev
,
Osinnykh, I V
,
Malin, T V
,
Zhuravlev, K S
Published in
Semiconductors (Woodbury, N.Y.)
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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
by
Ratnikov, V. V.
,
Sheglov, M. P.
,
Ber, B. Ya
,
Kazantsev, D. Yu
,
Osinnykh, I. V.
,
Malin, T. V.
,
Zhuravlev, K. S.
Published in
Semiconductors (Woodbury, N.Y.)
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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al{sub x}Ga{sub 1–} {sub x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
by
Ratnikov, V. V.
,
Sheglov, M. P.
,
Ber, B. Ya
,
Kazantsev, D. Yu
,
Osinnykh, I. V.
,
Malin, T. V.
,
Zhuravlev, K. S.
Published in
Semiconductors (Woodbury, N.Y.)
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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
by
Ratnikov, V. V.
,
Sheglov, M. P.
,
Ber, B. Ya
,
Kazantsev, D. Yu
,
Osinnykh, I. V.
,
Malin, T. V.
,
Zhuravlev, K. S.
Published in
Semiconductors (Woodbury, N.Y.)
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Residual strains in GaN grown on 6H-SiC
by
Nikitina, I.P.
,
Sheglov, M.P.
,
Melnik, Yu.V.
,
Irvine, K.G.
,
Dmitriev, V.A.
Published in
Diamond and related materials
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X-ray generation from flat water jet irradiated by up to 120 mJ femtosecond laser pulse
by
Zhukova, M. O.
,
Ponomareva, E. A.
,
Sheglov, P. A.
,
Chashin, M. V.
,
Tcypkin, A. N.
,
Nazarov, M. M.
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Terawatt two color filamentation in a low pressure gas: characterization by THz and X-ray generation
by
Nazarov, M. M.
,
Mitrofanov, A. V.
,
Sidorov-Biryukov, D. A.
,
Sheglov, P. A.
,
Chashin, M. V.
,
Garmatina, A. A.
,
Gordienko, V. M.
,
Panchenko, V. Ya
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