Search Results - Rrustemi, Bledion

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  1. 1
    Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments

    Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments by Rrustemi, Bledion, Triozon, François, Jaud, Marie-Anne, Vandendaele, William, Ghibaudo, Gérard

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  2. 2
    Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

    Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors by Rrustemi, Bledion, Jaud, Marie-Anne, Triozon, François, Piotrowicz, Clémentine, Vandendaele, William, Leroux, Charles, Le Royer, Cyrille, Biscarrat, Jérôme, Ghibaudo, Gérard

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    6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts

    6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts by Morvan, E., Gobil, Y., Morisot, F., Biscarat, J., Charles, M., Lugo, J., Divay, A., Medbouhi, M., Charlet, I., Delprato, J., Scheiblin, P., Rrustemi, B., Giry, A., Serhan, A., Ruel, S., Pimenta-Barros, P., Laulagnet, F., Minoret, S., Anotta, A., Billon, T., Duriez, B.

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