Search Results - Podlesnykh, I.M.

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    Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm−3) by ion implantation/pulsed laser annealing

    Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm−3) by ion implantation/pulsed laser annealing by Podlesnykh, I.M., Kovalev, M.S., Nastulyavichus, A.A., Stsepuro, N.G., Pushkarev, S.S., Kozlova, E.A., Dravin, V.A., Vlasov, A.I., Platonov, P.V., Kudryashov, S.I.

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  2. 2
    Pulsed laser annealing of sulfur hyperdoped silicon prepared by ion implantation

    Pulsed laser annealing of sulfur hyperdoped silicon prepared by ion implantation by Podlesnykh, I.M., Kovalev, M.S., Batalov, R.I.

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    High-power pulse repetitive HF(DF) laser with a solid-state pump generator

    High-power pulse repetitive HF(DF) laser with a solid-state pump generator by Velikanov, S.D., Domazhirov, A.P., Zaretskiy, N.A., Kazantsev, S.Yu, Kononov, I.G., Kromin, A.A., Podlesnykh, S.V., Sivachev, A.A., Firsov, K.N., Kharitonov, S.V., Tsykin, V.S., Shchurov, V.V., Yutkin, I.M.

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