Low-temperature Si surface cleaning by hydrogen beam with electron-cyclotron-resonance plasma excitation

by SHIBATA, T, NANISHI, Y, FUJIMOTO, M
Published in Japanese Journal of Applied Physics

Potential and challenges of InN and related alloys for advanced electronic devices

by Nanishi, Y., Maeda, N., Yamaguchi, T., Kaneko, M.

Selective area growth of GaAs by Electron-Cyclotron Resonance plasma-excited Molecular-Beam Epitaxy (ECR-MBE)

by Yamamoto, Norio, Kondo, Naoto, Nanishi, Yasushi
Published in Journal of crystal growth

Plasma-controlled selective area growth of GaAs by electron-cyclotron resonance plasma-excited molecular-beam epitaxy (ECR-MBE)

by Yamamoto, Norio, Kondo, Naoto, Nanishi, Yasushi
Published in Journal of crystal growth

Effect of atomic hydrogen irradiation on native oxides of InN surface

by Ohashi, Takashi, Saito, Yoshiki, Maruyama, Takahiro, Nanishi, Yasushi
Published in Journal of crystal growth

Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution

by Nanishi, Yasushi, Ishida, Satoru, Honda, Takashi, Yamazaki, Hajime, Miyazawa, Shintaro
Published in Japanese Journal of Applied Physics

Liquid Phase Epitaxial Growth of High Purity GaAs by Sliding Boat Method

by Nanishi, Yasushi
Published in Japanese Journal of Applied Physics

In-situ cyclic pulse annealing of InN on AIN/Si during IR-lamp-heated MBE growth

by SUZUKI, Akira, YU BUNGI, ARAKI, Tsutomu, NANISHI, Yasushi, MORI, Yasuaki, YAMAMOTO, Hiroaki, HARIMA, Hiroshi

Continuous Growth of LPE Double Layers for GaAs FET

by Nanishi, Yasushi
Published in Japanese Journal of Applied Physics

Correlation between dislocation distribution and FET performances observed in low Cr doped LEC GaAs

by NANISHI, Y, ISHIDA, S, MIYAZAWA, S
Published in Japanese Journal of Applied Physics

Structural Dependence of GaN/Al2O3 on Electric Bias During Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)

by Shimizu, Yuui, Tominari, Tatsuya, Hokuto, Shingo, Chiba, Yasuo, Nanishi, Yasushi
Published in Japanese Journal of Applied Physics

(Invited) Characterization of Semi-Insulating GaAs Substrates for GaAs ICs

by Miyazawa, Shintaro, Nanishi, Yasushi
Published in Japanese Journal of Applied Physics

Recent progress and material issues of high power and high frequency AlGaN/GaN HFETs

by Nanishi, Y.

The influence of dislocation density on the uniformity of electrical properties of Si implanted, semi-insulating LEC-GaAs

by HONDA, T, ISHII, Y, MIYAZAWA, S, YAMAZAKI, H, NANISHI, Y
Published in Japanese Journal of Applied Physics

ECR-MBE growth of GaN on LiGaO2

by Okada, Makoto, Higaki, Yukihiro, Yanagi, Takayuki, Shimizu, Yuui, Nanishi, Yasushi, Ishii, Takao, Miyazawa, Shintaro
Published in Journal of crystal growth

Suppression of AlSb oxidation with hydrocarbon passivation layer induced by MeV-He+ irradiation

by Nakata, Jyoji, Shibata, Tomohiro, Nanishi, Yasushi, Fujimoto, Masatomo
Published in Journal of applied physics

Effect of atomic hydrogen irradiation on native oxides of InN surface

by OHASHI, Takashi, SAITO, Yoshiki, MARUYAMA, Takahiro, NANISHI, Yasushi

Liquid Phase Epitaxial Growth of n -GaAs on i -GaAs

by Nanishi, Yasushi, Aoki, Tatsuo, Sato, Yasuo
Published in Japanese Journal of Applied Physics

Surface cleaning of C-doped p+ GaAs with hydrogen electron cyclotron resonance plasma

by WATANABE, N, NITTONO, T, ITO, H, KONDO, N, NANISHI, Y
Published in Journal of applied physics

Synthesis of Optically Active Mandelic Acid via Microbial Oxidation of Racemic 1-Phenyl-l,2-ethanediol

by Oda, Shinobu, Kikuchi, Yutaka, Nanishi, Yasushi
Published in Bioscience, biotechnology, and biochemistry