Low-temperature surface cleaning of GaAs by electron cyclotron resonance (ECR) plasma

by KONDO, N, NANISHI, Y
Published in Japanese Journal of Applied Physics

In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN

by Wang, Ke, Yamaguchi, Tomohiro, Araki, Tsutomu, Yoon, Euijoon, Nanishi, Yasushi
Published in Japanese Journal of Applied Physics

SURFACE CLEANING OF ALGAAS SUBSTRATES BY HYDROGEN ELECTRON-CYCLOTRON RESONANCE (ECR) PLASMA

by KONDO, N, NANISHI, Y, FUJIMOTO, M
Published in JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS

Crystal Growth and Optical Property of GaN on Silica Glass by Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)

by Murata, Naoya, Tochishita, Hikari, Shimizu, Yuui, Araki, Tsutomu, Nanishi, Yasushi
Published in Japanese Journal of Applied Physics

Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy

by Hagio, Yoshinori, Sugahara, Hideo, Maruyama, Takahiro, Nanishi, Yasushi, Akimoto, Katsuhiro, Miyajima, Takao, Kijima, Satoru
Published in Japanese Journal of Applied Physics

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

by Suzuki, Akira, Bungi, Yu, Araki, Tsutomu, Nanishi, Yasushi, Mori, Yasuaki, Yamamoto, Hiroaki, Harima, Hiroshi
Published in Journal of crystal growth

Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure

by Lee, Keon-Hun, Shin, In Su, Park, Sung Hyun, Moon, Dae Young, Kim, Minhwa, Park, Jinsub, Nanishi, Yasushi, Yoon, Euijoon
Published in Japanese Journal of Applied Physics

Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistor

by MIYAZAWA, S, ISHII, Y, ISHIDA, S, NANISHI, Y
Published in Applied physics letters

Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure

by Lee, Keon-Hun, Shin, In Su, Park, Sung Hyun, Moon, Dae Young, Kim, Minhwa, Park, Jinsub, Nanishi, Yasushi, Yoon, Euijoon
Published in Japanese Journal of Applied Physics

Direct growth of AlGaAs/GaAs single quantum wells on GaAs substrates cleaned by electron cyclotron resonance (ECR) hydrogen plasma

by KONDO, N, NANISHI, Y, FUJIMOTO, M
Published in Japanese Journal of Applied Physics

Effect of low-temperature InGaN interlayers on structural and optical properties of In-rich InGaN

by Na, Hyunseok, Takado, Shinya, Sawada, Shinya, Kurouchi, Masahito, Akagi, Takanobu, Naoi, Hiroyuki, Araki, Tsutomu, Nanishi, Yasushi
Published in Journal of crystal growth

Synthesis of optically active mandelic acid via microbial oxidation of racemic 1-phenyl-1,2-ethanediol

by Oda, S. (Kansai Paint Co. Ltd., Hiratsuka, Kanagawa (Japan)), Kikuchi, Y, Nanishi, Y
Published in Bioscience, biotechnology, and biochemistry

Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns

by Harui, Satoshi, Tamiya, Hidetoshi, Akagi, Takanobu, Miyake, Hideto, Hiramatsu, Kazumasa, Araki, Tsutomu, Nanishi, Yasushi
Published in Japanese Journal of Applied Physics

Optical emission spectroscopy during InN growth by ECR–MBE

by Koizumi, Takeshi, Wada, Junichi, Araki, Tsutomu, Naoi, Hiroyuki, Nanishi, Yasushi
Published in Journal of crystal growth

Si surface cleaning and epitaxial growth of GaAs on Si by electron cyclotron resonance plasma-excited molecular-beam-epitaxy at low temperatures

by SHIBATA, T, KONDO, N, NANISHI, Y
Published in Journal of the Electrochemical Society

Improvements of electrical and optical properties of GaAs by substrate bias application during electron-cyclotron-resonance plasma-excited molecular beam epitaxy

by KONDO, N, NANISHI, Y
Published in Applied physics letters

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm 2 /(V s) Channel Mobility

by Otake, Hirotaka, Egami, Shin, Ohta, Hiroaki, Nanishi, Yasushi, Takasu, Hidemi
Published in Japanese Journal of Applied Physics

A Rutherford backscattering spectroscopic study of the aluminium antimonide oxidation process in air

by SHIBATA, T, NAKATA, J, NANISHI, Y, FUJIMOTO, M
Published in Japanese Journal of Applied Physics

Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

by Park, Sung Hyun, Moon, Daeyoung, Kim, Bumho, Joo, Kisu, You, Duck-Jae, Kim, Dong-Uk, Chang, Hojun, Jeon, Heonsu, Nanishi, Yasushi, Yoon, Euijoon
Published in Journal of the Korean Physical Society

High-Sensitivity Ozone Sensing Using 280 nm Deep Ultraviolet Light-Emitting Diode for Detection of Natural Hazard Ozone

by Aoyagi, Yoshinobu, Takeuchi, Misaichi, Yoshida, Kaoru, Kurouchi, Masahito, Araki, Tsutomu, Nanishi, Yasushi, Sugano, Hiroyasi, Ahiko, Yumi, Nakamura, Hirotaka
Published in Journal of environmental protection (Irvine, Calif.)