Properties of Si quantum dot/SiOx porous film structures synthesized using hydrogen fluoride technology by Dan’ko, Viktor A., Zlobin, Sergei O., Indutnyi, Ivan Z., Lisovskyy, Igor P., Litovchenko, Vladimir G., Mikhailovskaya, Ekaterina V., Shepelyavyi, Petr E., Begun, Evgeniya V.

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