Showing
1 - 12
results of
12
for search '
Mee, L.
'
Skip to content
University Library
Library Catalogue Plus
Toggle navigation
New Search
Subject Guides (including databases)
Your Account
Log Out
Login
Language
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
English
Catalogue
Articles Plus
Keyword
Title
Author
Subject
Find
Advanced Search
Reset Filters
Journal Title:
Journal Of Electronic Materials
Reset Filters
Show filters (1)
Journal Title:
Journal Of Electronic Materials
Search Results - Mee, L.
Showing
1 - 12
results of
12
for search '
Mee, L.
'
Refine Results
Sort
Relevance
Date Descending
Author
Title
1
Electrical and optical activation studies of Si-implanted GaN
by
Fellows, James A.
,
Yeo, Y. K.
,
Ryu, Mee-Yi
,
Hengehold, R. L.
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
2
Electrical Activation Studies of Silicon-Implanted Al^sub x^Ga^sub 1-x^N with Aluminum Mole Fraction of 11% to 51
by
Moore, E A
,
Yeo, Y K
,
Ryu, Mee-Yi
,
Hengehold, R L
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
3
Electrical Activation Studies of Silicon-Implanted Al x Ga1−x N with Aluminum Mole Fraction of 11% to 51
by
Moore, E. A.
,
Yeo, Y. K.
,
Ryu, Mee-Yi
,
Hengehold, R. L.
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
4
Electrical and optical characterization studies of lower dose Si-implanted AlxGa1−xN
by
Ryu, Mee-Yi
,
Yeo, Y. K.
,
Marciniak, M. A.
,
Zens, T. W.
,
Moore, E. A.
,
Hengehold, R. L.
,
Steiner, T. D.
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
5
Temperature-Dependent Studies of Si-Implanted Al^sub 0.33^Ga^sub 0.67^N with Different Annealing Temperatures and Times
by
Moore, E A
,
Yeo, Y K
,
Gruen, G J
,
Ryu, Mee-Yi
,
Hengehold, R L
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
6
Electrical Activation Studies of Silicon-Implanted AlxGa1−xN with Aluminum Mole Fraction of 11% to 51
by
Moore, E. A.
,
Yeo, Y. K.
,
Ryu, Mee-Yi
,
Hengehold, R. L.
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
7
Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Alsub xGasub 1-x with High Aluminum Mole Fraction
by
Moore, E A
,
Yeo, Y K
,
Ryu, Mee-Yi
,
Hengehold, R L
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
8
Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al^sub x^Ga^sub 1-x^N with High Aluminum Mole Fraction
by
Moore, E A
,
Yeo, Y K
,
Ryu, Mee-Yi
,
Hengehold, R L
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
9
Temperature-Dependent Studies of Si-Implanted Al0.33Ga0.67N with Different Annealing Temperatures and Times
by
Moore, E.A.
,
Yeo, Y.K.
,
Gruen, G.J.
,
Ryu, Mee-Yi
,
Hengehold, R.L.
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
10
Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted AlxGa1−xN with High Aluminum Mole Fraction
by
Moore, E.A.
,
Yeo, Y.K.
,
Ryu, Mee-Yi
,
Hengehold, R.L.
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
11
Electrical and optical activation studies of Si-lmplanted GaN
by
FELLOWS, James A
,
YEO, Y. K
,
RYU, Mee-Yi
,
HENGEHOLD, R. L
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
12
Electrical and optical characterization studies of lower dose SA-lGplanNed AlxGa1-xN: Group III Nitrides, SiC, and ZnO
by
RYU, Mee-Yi
,
YEO, Y. K
,
MARCINIAK, M. A
,
ZENS, T. W
,
MOORE, E. A
,
HENGEHOLD, R. L
,
STEINER, T. D
Published in
Journal of electronic materials
Get full text
Article
Save to List
Saved in:
Search Tools:
Get RSS Feed
—
Email this Search
—
Save Search
Back
Narrow Search
Limit To
Peer Reviewed
12
Full Text
12
Format
Articles
12
Journal Title
Journal Of Electronic Materials
Subjects
Physics
7
Materials Science
5
Exact Sciences And Technology
5
Physical Sciences
4
Technology
4
Structure Of Solids And Liquids; Crystallography
4
Science & Technology
4
Physics, Applied
4
Photoluminescence
4
Materials Science, Multidisciplinary
4
Engineering, Electrical & Electronic
4
Engineering
4
Defects And Impurities In Crystals; Microstructure
4
Condensed Matter: Structure, Mechanical And Thermal Properties
4
Characterization And Evaluation Of Materials
3
Chemistry And Materials Science
3
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
3
Doping And Impurity Implantation In Iii-V And Ii-Vi Semiconductors
3
Electronics
3
Electronics And Microelectronics
3
Year of Publication
From:
To:
Source
Springerlink Contemporary
12
Springerlink 过刊(Nstl购买)
8
Science Citation Index Expanded (Web Of Science)
4
© 2017 Loughborough University. All rights reserved.
Loading...