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Search Results - Lingaparthi, R.
Search Results - Lingaparthi, R.
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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap sta...
by
Lingaparthi, R.
,
Dharmarasu, N.
,
Radhakrishnan, K.
,
Huo, Lili
Published in
Applied physics letters
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Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy
by
Lingaparthi, R
,
Dharmarasu, N
,
Radhakrishnan, K
,
Zheng, Y
Published in
Journal of physics. D, Applied physics
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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
by
Lingaparthi, R.
,
Dharmarasu, N.
,
Radhakrishnan, K.
,
Ranjan, A.
,
Seah, Tian Long Alex
,
Huo, Lili
Published in
Applied physics letters
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
by
Garcia-Sanchez, S.
,
Daher, M. Abou
,
Lesecq, M.
,
Huo, L.
,
Lingaparthi, R.
,
Nethaji, D.
,
Radhakrishnan, K.
,
Iniguez-de-la-Torre, I.
,
Vasallo, B. G.
,
Perez, S.
,
Gonzalez, T.
,
Mateos, J.
Published in
IEEE transactions on electron devices
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Non-linear thermal resistance model for the simulation of high power GaN-based devices
by
García-Sánchez, S
,
Íñiguez-de-la-Torre, I
,
Pérez, S
,
Ranjan, K
,
Agrawal, M
,
Lingaparthi, R
,
Nethaji, D
,
Radhakrishnan, K
,
Arulkumaran, S
,
Ng, G I
,
González, T
,
Mateos, J
Published in
Semiconductor science and technology
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In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobi...
by
Lingaparthi, R.
,
Dharmarasu, N.
,
Radhakrishnan, K.
,
Agrawal, M.
Published in
Thin solid films
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Surface states on (001) oriented β-Ga2O3 epilayers, their origin, and their effect on the electrical properties of Schottky barrier diodes
by
Lingaparthi, R.
,
Thieu, Q. T.
,
Koshi, K.
,
Wakimoto, D.
,
Sasaki, K.
,
Kuramata, A.
Published in
Applied physics letters
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Effects of Oxygen Annealing of β-Ga2O3 Epilayers on the Properties of Vertical Schottky Barrier Diodes
by
Lingaparthi, R.
,
Thieu, Q. T.
,
Sasaki, K.
,
Takatsuka, A.
,
Otsuka, F.
,
Yamakoshi, S.
,
Kuramata, A.
Published in
ECS journal of solid state science and technology
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Effects of Oxygen Annealing of β -Ga 2 O 3 Epilayers on the Properties of Vertical Schottky Barrier Diodes
by
Lingaparthi, R.
,
Thieu, Q. T.
,
Sasaki, K.
,
Takatsuka, A.
,
Otsuka, F.
,
Yamakoshi, S.
,
Kuramata, A.
Published in
ECS journal of solid state science and technology
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